Synthesis and Characterization of Type II Ge-Si Clathrate Films for Optoelectronic Applications

Type II inorganic clathrates consist of cage-like structures with open frameworks, and they are considered promising materials due to their unique properties. However, the difficulty of synthesizing phase-pure and continuous films has hindered their application in practical devices. In this report, we demonstrate the synthesis of type II SiGe clathrate films through the thermal decomposition of a Na-deposited amorphous SiGe film on a sapphire substrate in a high vacuum. The as-prepared films of type II SiGe clathrates showed uniform growth and were evaluated for their structural and optical properties. Morphological studies conducted using a scanning electron microscope showed the presence of cracks on the film surface.

A Borosilicide with Clathrate VIII Structure

The high-pressure phase Na₈B_xSi_46–x (3 < x < 5) is the first representative of a borosilicide crystallizing in the rarely occurring clathrate VIII type structure. Crystals with composition Na₈B₄Si₄₂ (space group I43̅m; a = 9.7187(2) Å; Pearson symbol cI54) were obtained at 5–8 GPa and 1200 K. The clathrate I modification exists for the same composition at lower pressure with a larger cell volume (Pm3̅n; a = 9. 977(2) Å; cP54). Profound structural adaptions allow for a higher density of the clathrate VIII type than clathrate I, opening up the perspective of obtaining clathrate VIII type compounds as high-pressure forms of clathrate I.

Temperature-dependent crystal structure investigation of 4f hybridized thermoelectric clathrate Ba8-xCexAuySi46-y

Thermoelectric materials allow for conversion of waste heat into electrical energy, and they represent a green solution for improving our energy efficiency. Inclusion of 4f electrons near the Fermi level may boost the Seebeck coefficient, which is essential for high thermoelectric performance. In this study, Ce was successfully substituted for Ba on the guest atom sites in the type-I clathrate Ba_8-xCe_xAu_ySi_46-y and the material was characterized using high-resolution synchrotron powder X-ray diffraction data measured from 100 K to 1000 K to investigate potential structural implications of the inclusion of a 4f element. The thermal expansion and bonding of the host structure are not affected by the presence of Ce, as seen from the linear coefficient of unit-cell thermal expansion of 7.30 (8) × 10^-6 K^-1 and the average host Debye temperature of 404 (7) K determined from the multi-temperature atomic displacement parameters, both of which are similar to values obtained for pure Ba₈Au_ySi_46-y. The anisotropic atomic displacement parameters on the guest atom site in the large clathrate cage populated by Ba surprisingly reveals isotropic behavior, which is different from all other clathrates reported in literature, and thus represents a unique host-guest bonding situation.

Structural and Electrochemical Properties of Type VIII Ba8Ga16-δSn30+δ Clathrate (δ ≈ 1) during Lithiation

Clathrates of the tetrel (Tt = Si, Ge, Sn) elements are host-guest structures that can undergo Li alloying reactions with high capacities. However, little is known about how the cage structure affects the phase transformations that take place during lithiation. To further this understanding, the structural changes of the type VIII clathrate Ba₈Ga_16-δSn_30+δ (δ ≈ 1) during lithiation are investigated and compared to those in β-Sn with ex situ X-ray total scattering measurements and pair distribution function (PDF) analysis. The results show that the type VIII clathrate undergoes an alloying reaction to form Li-rich amorphous phases (Li_xBa_0.17Ga_0.33Sn_0.67, x = 2-3) with local structures similar to those in the crystalline binary Li-Sn phases that form during the lithiation of β-Sn. As a result of the amorphous phase transition, the type VIII clathrate reacts at a lower voltage (0.25 V vs Li/Li⁺) compared to β-Sn (0.45 V) and goes through a solid-solution reaction after the initial conversion of the crystalline clathrate phase. Cycling experiments suggest that the amorphous phase persists after the first lithiation and results in considerably better cycling than in β-Sn. Density functional theory (DFT) calculations suggest that topotactic Li insertion into the clathrate lattice is not favorable due to the high energy of the Li sites, which is consistent with the experimentally observed amorphous phase transformation. The local structure in the clathrate featuring Ba atoms surrounded by a cage of Ga and Sn atoms is hypothesized to kinetically circumvent the formation of Li-Sn or Li-Ga crystalline phases, which results in better cycling and a lower reaction voltage. Based on the improved electrochemical performance, clathrates could act as tunable precursors to form amorphous Li alloying phases with novel electrochemical properties.

The impact of boron atoms on clathrate-I silicides: composition range of the borosilicide K8-xBySi46-y

The clathrate-I borosilicide K_8-xB_ySi_46-y (0.8 ≤x≤ 1.2 and 6.4 ≤y≤ 7.2; space group Pm3[combining macron]n) was prepared in sealed tantalum ampoules between 900 °C and 1000 °C. By high-pressure preparation at 8 GPa and 1000 °C, a higher boron content is achieved (x = 0.2, y = 7.8). Crystal structure and composition were established from X-ray diffraction data, chemical analysis, WDX spectroscopy, and confirmed by ¹¹B and ²⁹Si NMR, and magnetic susceptibility measurements. The compositions are electron-balanced according to the Zintl rule within one estimated standard deviation. The lattice parameter varies with composition from a = 9.905 Å for K_7.85(2)B_7.8(1)Si_38.2(1) to a = 9.968(1) Å for K_6.80(2)B_6.4(5)Si_39.6(5).