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Skaggs C, Siegfried PE, Cho JS, Xin Y, Garlea VO, Taddei KM, Bhandari H, Croft M, Ghimire NJ, Jang JI, Tan X. Ba 4RuMn 2O 10: A Noncentrosymmetric Polar Crystal Structure with Disordered Trimers. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2024; 36:6053-6061. [PMID: 38947978 PMCID: PMC11210430 DOI: 10.1021/acs.chemmater.4c00586] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Revised: 05/06/2024] [Accepted: 05/22/2024] [Indexed: 07/02/2024]
Abstract
Phase-pure polycrystalline Ba4RuMn2O10 was prepared and determined to adopt the noncentrosymmetric polar crystal structure (space group Cmc21) based on results of second harmonic generation, convergent beam electron diffraction, and Rietveld refinements using powder neutron diffraction data. The crystal structure features zigzag chains of corner-shared trimers, which contain three distorted face-sharing octahedra. The three metal sites in the trimers are occupied by disordered Ru/Mn with three different ratios: Ru1:Mn1 = 0.202(8):0.798(8), Ru2:Mn2 = 0.27(1):0.73(1), and Ru3:Mn3 = 0.40(1):0.60(1), successfully lowering the symmetry and inducing the polar crystal structure from the centrosymmetric parent compounds Ba4T3O10 (T = Mn, Ru; space group Cmca). The valence state of Ru/Mn is confirmed to be +4 according to X-ray absorption near-edge spectroscopy. Ba4RuMn2O10 is a narrow bandgap (∼0.6 eV) semiconductor exhibiting spin-glass behavior with strong magnetic frustration and antiferromagnetic interactions.
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Affiliation(s)
- Callista
M. Skaggs
- Department
of Chemistry and Biochemistry, George Mason
University, Fairfax, Virginia 22030, United States
| | - Peter E. Siegfried
- Department
of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Quantum
Science and Engineering Center, George Mason
University, Fairfax, Virginia 22030, United States
| | - Jun Sang Cho
- Department
of Physics, Sogang University, Seoul 04017, Republic of Korea
| | - Yan Xin
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - V. Ovidiu Garlea
- Neutron Scattering
Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Keith M. Taddei
- Neutron Scattering
Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- X-ray
Science
Division, Advanced Photon Source, Argonne
National Laboratory, Lemont, Illinois 60439, United States
| | - Hari Bhandari
- Department
of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Department
of Physics and Astronomy and Stavropoulos Center for Complex Quantum
Matter, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Mark Croft
- Department
of Physics and Astronomy, Rutgers, The State
University of New Jersey, Piscataway, New Jersey 08854, United States
| | - Nirmal J. Ghimire
- Department
of Physics and Astronomy and Stavropoulos Center for Complex Quantum
Matter, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Joon I. Jang
- Department
of Physics, Sogang University, Seoul 04017, Republic of Korea
| | - Xiaoyan Tan
- Department
of Chemistry and Biochemistry, George Mason
University, Fairfax, Virginia 22030, United States
- Quantum
Science and Engineering Center, George Mason
University, Fairfax, Virginia 22030, United States
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Volkova LM, Marinin DV. Crystal chemistry aspects of the magnetically induced ferroelectricity in TbMn(2)O(5) and BiMn(2)O(5). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2009; 21:015903. [PMID: 21817234 DOI: 10.1088/0953-8984/21/1/015903] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The origin of magnetic frustration was stated and the ions, whose shift is accompanied by emerging magnetic ordering and ferroelectricity in TbMn(2)O(5) and BiMn(2)O(5), were determined on the basis of calculating the magnetic coupling parameters by using the structural data. The displacements accompanying the magnetic ordering are not polar, they just induce changes of bond valence (charge disordering) of Mn1 and Mn2, thus creating instability in the crystal structure. The approximation of the bond valence to the initial value (charge ordering) under magnetic ordering conditions is only possible again due to polar displacement of Mn2 (or O1) and O4 ions along the b axis which is the cause of the ferroelectric transition.
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Affiliation(s)
- L M Volkova
- Institute of Chemistry, Far Eastern Branch of the Russian Academy of Sciences, 690022 Vladivostok, Russia
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