Reference Citation Analysis: Find an Article, Find a Category, Find a Journal, Find a Scholar

For: Anastassakis E. Strain Characterization of Semiconductor Structures and Superlattices. In: Lockwood DJ, Young JF, editors. Light Scattering in Semiconductor Structures and Superlattices. Boston: Springer US; 1991. pp. 173-96. [DOI: 10.1007/978-1-4899-3695-0_13] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/08/2023]

For:	Anastassakis E. Strain Characterization of Semiconductor Structures and Superlattices. In: Lockwood DJ, Young JF, editors. Light Scattering in Semiconductor Structures and Superlattices. Boston: Springer US; 1991. pp. 173-96. [DOI: 10.1007/978-1-4899-3695-0_13] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/08/2023]

Number	Cited by Other Article(s)
1	Islam MR, Chen NF, Yamada M. Raman scattering characterization of Mn composition and strain in Ga1-xMnxSb/GaSb epitaxial layers. CRYSTAL RESEARCH AND TECHNOLOGY 2008. [DOI: 10.1002/crat.200800144] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
2	Anestou K, Papadimitriou D, Tsamis C, Nassiopoulou AG. Stress characteristics of suspended porous silicon microstructures on silicon. ACTA ACUST UNITED AC 2005. [DOI: 10.1088/1742-6596/10/1/076] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
3	Bhagavannarayana G, Dietrich B, Zaumseil Z, Dombrowski KF. Determination of Germanium Content and Relaxation in Si1—xGex/Si Layers by Raman Spectroscopy and X-Ray Diffractometry. ACTA ACUST UNITED AC 1999. [DOI: 10.1002/(sici)1521-396x(199904)172:2<425::aid-pssa425>3.0.co;2-t] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse