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Huang Z, Liu W, Yue J, Zhou Q, Zhang W, Lu Y, Sui Y, Zhai Y, Chen Q, Dong S, Wang J, Xu Y, Wang B. Enhancing the Spin-Orbit Coupling in Fe 3O 4 Epitaxial Thin Films by Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2016; 8:27353-27359. [PMID: 27658969 DOI: 10.1021/acsami.6b09478] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
By analyzing the in-plane angular dependence of ferromagnetic resonance linewidth, we show that the Gilbert damping constant in ultrathin Fe3O4 epitaxial films on GaAs substrate can be enhanced by thickness reduction and oxygen vacancies in the interface. At the same time, the uniaxial magnetic anisotropy due to the interface effect becomes significant. Using the element-specific technique of X-ray magnetic circular dichroism, we find that the orbital-to-spin moment ratio increases with decreasing film thickness, in full agreement with the increase in the Gilbert damping obtained for these ultrathin single-crystal films. Combined with the first-principle calculations, the results suggest that the bonding with Fe and Ga or As ions and the ionic distortion near the interface, as well as the FeO defects and oxygen vacancies, may increase the spin-orbit coupling in ultrathin Fe3O4 epitaxial films and in turn provide an enhanced damping.
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Affiliation(s)
- Zhaocong Huang
- Department of Physics, Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University , Nanjing 211189, China
- Spintronics and Nanodevice Laboratory, Department of Electronics, University of York , York, U.K
- School of Electronic Science and Engineering, Southeast University , Nanjing 210096, China
| | - Wenqing Liu
- Spintronics and Nanodevice Laboratory, Department of Electronics, University of York , York, U.K
- Department of Electronic Engineering, Royal Holloway, University of London , Surrey, U.K
| | - Jinjin Yue
- Department of Physics, Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University , Nanjing 211189, China
| | - Qionghua Zhou
- Department of Physics, Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University , Nanjing 211189, China
| | - Wen Zhang
- Department of Physics, Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University , Nanjing 211189, China
| | - Yongxiong Lu
- Spintronics and Nanodevice Laboratory, Department of Electronics, University of York , York, U.K
| | - Yunxia Sui
- National Laboratory of Solid Microstructures and Center of Modern Analysis, Nanjing University , Nanjing, China
| | - Ya Zhai
- Department of Physics, Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University , Nanjing 211189, China
- National Laboratory of Solid Microstructures and Center of Modern Analysis, Nanjing University , Nanjing, China
| | - Qian Chen
- Department of Physics, Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University , Nanjing 211189, China
| | - Shuai Dong
- Department of Physics, Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University , Nanjing 211189, China
| | - Jinlan Wang
- Department of Physics, Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University , Nanjing 211189, China
| | - Yongbing Xu
- Spintronics and Nanodevice Laboratory, Department of Electronics, University of York , York, U.K
| | - Baoping Wang
- School of Electronic Science and Engineering, Southeast University , Nanjing 210096, China
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