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Moon S, Kim J, Park J, Im S, Kim J, Hwang I, Kim JK. Hexagonal Boron Nitride for Next-Generation Photonics and Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204161. [PMID: 35735090 DOI: 10.1002/adma.202204161] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Revised: 06/14/2022] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h-BN have expanded potential applications into emerging electronics and photonics fields. h-BN shows a very efficient deep-ultraviolet band-edge emission despite its indirect-bandgap nature, as well as stable room-temperature single-photon emission over a wide wavelength range, showing a great potential for next-generation photonics. In addition, h-BN is extensively being adopted as active media for low-energy electronics, including nonvolatile resistive switching memory, radio-frequency devices, and low-dielectric-constant materials for next-generation electronics.
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Affiliation(s)
- Seokho Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jiye Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jeonghyeon Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Semi Im
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jawon Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Inyong Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jong Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
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Peng W, Wang H, Lu H, Yin L, Wang Y, Grandidier B, Yang D, Pi X. Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100655. [PMID: 34337855 DOI: 10.1002/smll.202100655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2021] [Revised: 05/18/2021] [Indexed: 06/13/2023]
Abstract
The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.
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Affiliation(s)
- Wenbing Peng
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Haolin Wang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Hui Lu
- Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang, 311215, China
| | - Lei Yin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Yue Wang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Bruno Grandidier
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, Lille, 59000, France
| | - Deren Yang
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
- Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang, 311215, China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
- Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou, Zhejiang, 311215, China
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Wang Y, Guo S, Luo H, Zhou C, Lin H, Ma X, Hu Q, Du MH, Ma B, Yang W, Lü X. Reaching 90% Photoluminescence Quantum Yield in One-Dimensional Metal Halide C4N2H14PbBr4 by Pressure-Suppressed Nonradiative Loss. J Am Chem Soc 2020; 142:16001-16006. [DOI: 10.1021/jacs.0c07166] [Citation(s) in RCA: 53] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Affiliation(s)
- Yingqi Wang
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Songhao Guo
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Hui Luo
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Chenkun Zhou
- Department of Chemical and Biomedical Engineering, FAMU-FSU College of Engineering, Florida State University, Tallahassee, Florida 32310, United States
| | - Haoran Lin
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Qingyang Hu
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Mao-hua Du
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Biwu Ma
- Department of Chemical and Biomedical Engineering, FAMU-FSU College of Engineering, Florida State University, Tallahassee, Florida 32310, United States
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Wenge Yang
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Xujie Lü
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
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Minnaar C, Anderson B. Using quantum dots as pollen labels to track the fates of individual pollen grains. Methods Ecol Evol 2019. [DOI: 10.1111/2041-210x.13155] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
Affiliation(s)
- Corneile Minnaar
- Department of Botany and Zoology; Stellenbosch University; Matieland South Africa
| | - Bruce Anderson
- Department of Botany and Zoology; Stellenbosch University; Matieland South Africa
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Okada T, Itoh T. Coexistence of bound and localized exciton magnetic polarons in Cd(0.8)Mn(0.2)Te. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2007; 19:186210. [PMID: 21690991 DOI: 10.1088/0953-8984/19/18/186210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Fundamental magneto-optical properties of single crystals of the semimagnetic semiconductor Cd(0.8)Mn(0.2)Te are carefully measured with the use of band-to-band excitation. Two new phenomena are presented: the peculiar magnetic field dependence of the magnetic polaron luminescence and the existence of two components for the polaron luminescence. Theoretical consideration with regard to the Zeeman effect ascribes the two components of luminescence to the exciton magnetic polaron spectrum and the neutral acceptor-bound exciton magnetic polaron spectrum. The calculated result for the luminescence peak positions is also consistent with the experimental result of the circularly polarized luminescence under the presence of an applied magnetic field. In other words, the σ(+) luminescence is due to the exciton magnetic polaron, whereas the σ(-) luminescence is due to the neutral acceptor-bound exciton magnetic polaron.
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Affiliation(s)
- Takanori Okada
- Pioneering Research Unit for Next Generation, Kyoto University, Kyoto 615-8245, Japan. Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Osaka 560-8531, Japan
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Gutowski J. Excitonic Complexes in Wide-Gap II-VI Semiconductors. GROWTH AND OPTICAL PROPERTIES OF WIDE-GAP II–VI LOW-DIMENSIONAL SEMICONDUCTORS 1989. [DOI: 10.1007/978-1-4684-5661-5_14] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
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