Noise and correlation functions of hot carriers in semiconductors

Analysis of the interface characteristics of CVD-grown monolayer MoS2 by noise measurements

We investigated the current-voltage and noise characteristics of two-dimensional (2D) monolayer molybdenum disulfide (MoS₂) synthesized by chemical vapor deposition (CVD). A large number of trap states were produced during the CVD process of synthesizing MoS₂, resulting in a disordered monolayer MoS₂ system. The interface trap density between CVD-grown MoS₂ and silicon dioxide was extracted from the McWhorter surface noise model. Notably, generation-recombination noise which is attributed to charge trap states was observed at the low carrier density regime. The relation between the temperature and resistance following the power law of a 2D inverted-random void model supports the idea that disordered CVD-grown monolayer MoS₂ can be analyzed using a percolation theory. This study can offer a viewpoint to interpret synthesized low-dimensional materials as highly disordered systems.