Reference Citation Analysis: Find an Article, Find a Category, Find a Journal, Find a Scholar

For:	Nagasawa K, Schulz M. Fast transient capacitance measurements for implanted deep levels in silicon. ACTA ACUST UNITED AC 1975;8:35-42. [DOI: 10.1007/bf00883667] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]

Number	Cited by Other Article(s)
1	Fazzio A, Caldas MJ, Zunger A. Electronic structure of copper, silver, and gold impurities in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1985;32:934-954. [PMID: 9937103 DOI: 10.1103/physrevb.32.934] [Citation(s) in RCA: 34] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
2	Defects in pulsed laser and thermal processed ion implanted silicon. ACTA ACUST UNITED AC 1984. [DOI: 10.1007/bf00617567] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
3	Krynicki J, Bourgoin JC. Defect annealing in phosphorus implanted silicon: A D.L.T.S. study. ACTA ACUST UNITED AC 1979. [DOI: 10.1007/bf00885514] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2022] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
4	Schulz M, Klausmann E. Transient capacitance measurements of interface states on the intentionally contaminated Si-SiO2 interface. ACTA ACUST UNITED AC 1979. [DOI: 10.1007/bf00934412] [Citation(s) in RCA: 85] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse
5	Lefèvre H, Schulz M. Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors. ACTA ACUST UNITED AC 1977. [DOI: 10.1007/bf00900067] [Citation(s) in RCA: 187] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022] Abstract Collapse Key Words Collapse MESH Headings Collapse Grants Collapse Affiliation(s) Collapse