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Citation(s) in
RCA
9
(from Reference Citation Analysis)
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2006 (1)
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1984 (1)
1979 (1)
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1976 (1)
1975 (2)
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RCA (9)
SCIE (9)
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Multidisciplinary Sciences (9)
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For:
Schulz M
.
Determination of deep trap levels in silicon using ion-implantation and CV-measurements.
ACTA ACUST UNITED AC
1974. [DOI:
10.1007/bf00884233
]
[
Citation(s) in
RCA
: 41
]
[
Impact Index Per Article: 0.8
]
[
Reference Citation Analysis
]
[
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[Indexed: 11/24/2022]
Number
Cited by Other Article(s)
1
Goetzberger A
, Klausmann E, Schulz MJ. Interface states on semiconductor/insulator surfaces.
ACTA ACUST UNITED AC
2006. [DOI:
10.1080/10408437608243548
]
[
Citation(s) in
RCA
: 103
]
[
Impact Index Per Article: 5.7
]
[
Reference Citation Analysis
]
[
Track Full Text
]
[
Journal Information
]
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]
[Indexed: 10/23/2022]
Abstract
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2
Korol VM
. Sodium-ion implantation into silicon.
ACTA ACUST UNITED AC
1988. [DOI:
10.1002/pssa.2211100102
]
[
Citation(s) in
RCA
: 28
]
[
Impact Index Per Article: 0.8
]
[
Reference Citation Analysis
]
[
Track Full Text
]
[
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]
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]
[Indexed: 11/10/2022]
Abstract
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3
Lemke H
. Eigenschaften von substitutionell gelöstem Mangan in Silizium.
ACTA ACUST UNITED AC
1984. [DOI:
10.1002/pssa.2210830228
]
[
Citation(s) in
RCA
: 13
]
[
Impact Index Per Article: 0.3
]
[
Reference Citation Analysis
]
[
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]
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[Indexed: 11/12/2022]
Abstract
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4
Kappert HF
, Sixt G, Schwuttke GH. Minority carrier lifetime in silicon after Ar+ and Si+ implantation.
ACTA ACUST UNITED AC
1979. [DOI:
10.1002/pssa.2210520214
]
[
Citation(s) in
RCA
: 17
]
[
Impact Index Per Article: 0.4
]
[
Reference Citation Analysis
]
[
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]
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[Indexed: 11/09/2022]
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5
Sixt G
, Kappert H, Schwuttke GH. Minority carrier lifetime and defect structure in silicon after cesium implantation.
ACTA ACUST UNITED AC
1977. [DOI:
10.1002/pssa.2210430112
]
[
Citation(s) in
RCA
: 8
]
[
Impact Index Per Article: 0.2
]
[
Reference Citation Analysis
]
[
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]
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[Indexed: 11/09/2022]
Abstract
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6
Axmann A
, Schulz M, Fritzsche CR. Implantation doping of germanium with Sb, As, and P.
ACTA ACUST UNITED AC
1977. [DOI:
10.1007/bf00896143
]
[
Citation(s) in
RCA
: 11
]
[
Impact Index Per Article: 0.2
]
[
Reference Citation Analysis
]
[
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]
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[Indexed: 10/26/2022]
Abstract
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7
Shakirov UA
, Yunusov MS. Influence of X-irradiation on silicon Schottky diodes.
ACTA ACUST UNITED AC
1976. [DOI:
10.1002/pssa.2210370240
]
[
Citation(s) in
RCA
: 3
]
[
Impact Index Per Article: 0.1
]
[
Reference Citation Analysis
]
[
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]
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[Indexed: 11/05/2022]
Abstract
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8
Schulz M
, Klausmann E, Hurrle A. Correlation of surface states with impurities.
ACTA ACUST UNITED AC
1975. [DOI:
10.1080/10408437508243490
]
[
Citation(s) in
RCA
: 14
]
[
Impact Index Per Article: 0.3
]
[
Reference Citation Analysis
]
[
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]
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[Indexed: 10/23/2022]
Abstract
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9
Fast transient capacitance measurements for implanted deep levels in silicon.
ACTA ACUST UNITED AC
1975. [DOI:
10.1007/bf00883667
]
[
Citation(s) in
RCA
: 20
]
[
Impact Index Per Article: 0.4
]
[
Reference Citation Analysis
]
[
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[Indexed: 11/29/2022]
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