Ferromagnetism near surfaces and in thin films

Near Degeneracy of Magnetic Phases in Two-Dimensional Chromium Telluride with Enhanced Perpendicular Magnetic Anisotropy

The discovery of atomically thin van der Waals magnets (e.g., CrI₃ and Cr₂Ge₂Te₆) has triggered a renaissance in the study of two-dimensional (2D) magnetism. Most of the 2D magnetic compounds discovered so far host only one single magnetic phase unless the system is at a phase boundary. In this work, we report the near degeneracy of magnetic phases in ultrathin chromium telluride (Cr₂Te₃) layers with strong perpendicular magnetic anisotropy highly desired for stabilizing 2D magnetic order. Single-crystalline Cr₂Te₃ nanoplates with a trigonal structure (space group P3̅1c) were grown by chemical vapor deposition. The bulk magnetization measurements suggest a ferromagnetic (FM) order with an enhanced perpendicular magnetic anisotropy, as evidenced by a coercive field as large as ∼14 kOe when the field is applied perpendicular to the basal plane of the thin nanoplates. Magneto-optical Kerr effect studies confirm the intrinsic ferromagnetism and characterize the magnetic ordering temperature of individual nanoplates. First-principles density functional theory calculations suggest the near degeneracy of magnetic orderings with a continuously varying canting from the c-axis FM due to their comparable energy scales, explaining the zero-field kink observed in the magnetic hysteresis loops. Our work highlights Cr₂Te₃ as a promising 2D Ising system to study magnetic phase coexistence and switches for ultracompact information storage and processing.

Oscillatory Indirect Coupling Between Perpendicularly Magnetized Co Monolayers Through Cu (111)

Co-Monolayers, prepared by MBE on Cu (111) -surfaces at room temperature and covered by Cu, are ferromagnetic with a Curie-temperature of about 430 K. They are magnetized perpendicularly because of a strong perpendicular magnetic surface anisotropy of the Cu/Co (111) -interface. They provide a remarkably good representation of the 2-dimensional Ising Model. The indirect coupling between these perpendicularly magnetized ferromagnetic monolayers was investigated using samples of type Cu (111) /lCo/DçuCu/lCo/Cu, containing Co/Cu/Co-trilayers composed of Co-Monolayers and a spacer consisting of DCu atomic layers of Cu (111). Torsion oscillation magnetometry of these samples showed clearly a coupling between the monolayers with an oscillatory dependence on DCu. The amplitude of the oscillation is strongly reduced if the coupled Co-films consist of 5 ML instead of 1 M.L. The present controversy on the presence or absence of antiferromagnetic and oscillatory indirect coupling in the Co/Cu (111) -system is discussed in the light of these experiments. The discussion shows that the oscillatory coupling is an intrinsic property of ideal (111)-structures, and can be understood by the RKKY-type theory of indirect coupling between ferromagnetic Monolayers. The usual application of this theory to the coupling between thicker films is justified. However, in the fcc (111) -system there is apparently a specific barrier against complete coalescence, resulting in a tendency to retain holes and channels in the Cu-spacer. This tendency is stronger in flat single-crystal samples than in sputtered films with high densities of atomic steps. Apparently, this results in competing ferromagnetic hole coupling which may more or less completely obscure the intrinsic oscillatory coupling, preferentially in samples grown on extremely flat single crystal surfaces.

Large voltage-induced magnetic anisotropy change in a few atomic layers of iron

In the field of spintronics, researchers have manipulated magnetization using spin-polarized currents. Another option is to use a voltage-induced symmetry change in a ferromagnetic material to cause changes in magnetization or in magnetic anisotropy. However, a significant improvement in efficiency is needed before this approach can be used in memory devices with ultralow power consumption. Here, we show that a relatively small electric field (less than 100 mV nm(-1)) can cause a large change (approximately 40%) in the magnetic anisotropy of a bcc Fe(001)/MgO(001) junction. The effect is tentatively attributed to the change in the relative occupation of 3d orbitals of Fe atoms adjacent to the MgO barrier. Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.

Imaging spin-reorientation transitions in consecutive atomic Co layers on Ru(0001)

By means of spin-polarized low-energy electron microscopy, we show that the magnetic easy axis of one to three atomic-layer thick cobalt films on Ru(0001) changes its orientation twice during deposition: One-monolayer and three-monolayer thick films are magnetized in plane, while two-monolayer films are magnetized out of plane. The Curie temperatures of films thicker than one monolayer are well above room temperature. Fully relativistic calculations based on the screened Korringa-Kohn-Rostoker method demonstrate that only for two-monolayer cobalt films does the interplay between strain, surface, and interface effects lead to perpendicular magnetization.

Magnetic phase in the near-surface region of an FeBO3 single crystal

An FeBO3 single crystal was studied from 291 K up to the Neel temperature T(N) = 348.35 K by depth selective conversion electron Mossbauer spectroscopy in ultrahigh vacuum (10(-9) mbar). A new magnetic near-surface phase was found. Its thickness D diverges on approaching T(N) and gives a critical exponent for the correlation length of nu = 0.59(4). The phase boundary between the bulk and near-surface phase could be identified.