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For: Axmann A, Schulz M, Fritzsche CR. Implantation doping of germanium with Sb, As, and P. ACTA ACUST UNITED AC 1977. [DOI: 10.1007/bf00896143] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
Number Cited by Other Article(s)
1
P implantation doping of Ge: Diffusion, activation, and recrystallization. ACTA ACUST UNITED AC 2006. [DOI: 10.1116/1.2162565] [Citation(s) in RCA: 87] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
2
Heavy ion implantation in Ge: Dramatic radiation induced morphology in Ge. ACTA ACUST UNITED AC 2006. [DOI: 10.1116/1.2151904] [Citation(s) in RCA: 56] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
3
Fritzsche C. Ionenimplantation in Halbleiter. Angew Chem Int Ed Engl 1978. [DOI: 10.1002/ange.19780900708] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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