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For: Lefèvre H. Trap-centers of self-interstitials in silicon. ACTA ACUST UNITED AC 1980;22:15-22. [DOI: 10.1007/bf00897926] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
Number Cited by Other Article(s)
1
Intrinsic Point Defects. COMPUTATIONAL MICROELECTRONICS 2004. [DOI: 10.1007/978-3-7091-0597-9_2] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2023]
2
New oxygen donors in silicon. ACTA ACUST UNITED AC 1989. [DOI: 10.1007/bf00617763] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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