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Kaniewska M, Engström O. Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique. MATERIALS SCIENCE & ENGINEERING. C, MATERIALS FOR BIOLOGICAL APPLICATIONS 2007. [DOI: 10.1016/j.msec.2006.09.012] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
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Kaniewska M, Engström O, Barcz A, Pacholak-Cybulska M. Deep levels induced by InAs/GaAs quantum dots. MATERIALS SCIENCE & ENGINEERING. C, MATERIALS FOR BIOLOGICAL APPLICATIONS 2006. [DOI: 10.1016/j.msec.2005.09.030] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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Misrachi S, Peaker AR, Hamilton B. A high sensitivity bridge for the measurement of deep states in semiconductors. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3735/13/10/005] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Jansson L, Kumar V, Ledebo LA, Nideborn K. A sensitive and inexpensive signal analyser for deep level studies. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3735/14/4/018] [Citation(s) in RCA: 23] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Irmscher K, Klose H, Maass K. Hydrogen-related deep levels in proton-bombarded silicon. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/17/35/007] [Citation(s) in RCA: 123] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Rezazadeh AA, Palmer DW. An electron-trapping defect level associated with the 235K annealing stage in electron-irradiation n-GaAs. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/18/1/012] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Dadgar A, Ammerlahn D, Näser A, Heitz R, Kuttler M, Bimberg D, Baber N, Hyeon JY, Schumann H. Deep-level transient-spectroscopy study of rhodium in indium phosphide. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7190-7196. [PMID: 9982166 DOI: 10.1103/physrevb.53.7190] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Csaszar W, Endrös AL. Anomalous electronic properties of a hydrogen-related deep donor in c-Si. PHYSICAL REVIEW LETTERS 1994; 73:312-315. [PMID: 10057138 DOI: 10.1103/physrevlett.73.312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides. ACTA ACUST UNITED AC 1993. [DOI: 10.1007/bf00331403] [Citation(s) in RCA: 29] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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Qurashi US, Iqbal MZ, Delerue C, Lannoo M. Electric-field dependence of electron emission from the deep-level oxygen defect in GaP. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:13331-13335. [PMID: 10001415 DOI: 10.1103/physrevb.45.13331] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Mesli A, Heiser T. Defect reactions in copper-diffused and quenched p-type silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:11632-11641. [PMID: 10001177 DOI: 10.1103/physrevb.45.11632] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bollmann J, Klose HA, R�hrich J, Frentrup W, Mertens A. On the correlation of implantation defects and implanted species. Mikrochim Acta 1992. [DOI: 10.1007/bf01244471] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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Baber N, Scheffler H, Ostmann A, Wolf T, Bimberg D. Field effect on electron emission from the deep Ti donor level in InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:4043-4047. [PMID: 10002016 DOI: 10.1103/physrevb.45.4043] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Deep level transient spectroscopy on radioactive impurities: Demonstration for Si:111In*. ACTA ACUST UNITED AC 1991. [DOI: 10.1007/bf00323866] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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Pettersson H, Grimmeiss HG. Electric-field-enhanced electron emission from isolated sulfur and selenium donors in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:1381-1387. [PMID: 9995552 DOI: 10.1103/physrevb.42.1381] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Weiss S, Beckmann R, Kassing R. The electrical properties of zinc in silicon. ACTA ACUST UNITED AC 1990. [DOI: 10.1007/bf00343410] [Citation(s) in RCA: 27] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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Buchwald WR, Gerardi GJ, Poindexter EH, Johnson NM, Grimmeiss HG, Keeble DJ. Electrical and optical characterization of metastable deep-level defects in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:2940-2945. [PMID: 9992224 DOI: 10.1103/physrevb.40.2940] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Le Bloa A, Dang Tran Quan, Favennec P. Méthode DDLTS utilisant une détection synchrone : application au GaAs implanté en oxygène. ACTA ACUST UNITED AC 1986. [DOI: 10.1051/rphysap:01986002108048900] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
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Bimberg D, Münzel H, Steckenborn A, Christen J. Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: Carrier capture by impurities. PHYSICAL REVIEW. B, CONDENSED MATTER 1985; 31:7788-7799. [PMID: 9935722 DOI: 10.1103/physrevb.31.7788] [Citation(s) in RCA: 61] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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H�lzlein K, Pensl G, Schulz M. Trap spectrum of the ?new oxygen donor? in silicon. ACTA ACUST UNITED AC 1984. [DOI: 10.1007/bf00616911] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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Determination of the entropy-factor of the gold donor level in silicon by resistivity and DLTS measurements. ACTA ACUST UNITED AC 1984. [DOI: 10.1007/bf00617573] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Sitter H, Humenberger J, Huber W, Lopez-Otero A. Characterization of epitaxial films of CdTe and CdS grown by hot-wall epitaxy. ACTA ACUST UNITED AC 1983. [DOI: 10.1016/0165-1633(83)90043-6] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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Assessment of persistent-photoconductivity centers in MBE grown Al x Ga1-x as using capacitance spectroscopy measurements. ACTA ACUST UNITED AC 1982. [DOI: 10.1007/bf00618698] [Citation(s) in RCA: 34] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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Breitenstein O. A capacitance meter of high absolute sensitivity suitable for scanning DLTS application. ACTA ACUST UNITED AC 1982. [DOI: 10.1002/pssa.2210710119] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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Bois D, Chantre A. Spectroscopies thermique et optique des niveaux profonds : Application à l'étude de leur relaxation de réseau. ACTA ACUST UNITED AC 1980. [DOI: 10.1051/rphysap:01980001503063100] [Citation(s) in RCA: 36] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
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Schulz M, Klausmann E. Transient capacitance measurements of interface states on the intentionally contaminated Si-SiO2 interface. ACTA ACUST UNITED AC 1979. [DOI: 10.1007/bf00934412] [Citation(s) in RCA: 85] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Pons D, Makram-Ebeid S. Phonon assisted tunnel emission of electrons from deep levels in GaAs. ACTA ACUST UNITED AC 1979. [DOI: 10.1051/jphys:0197900400120116100] [Citation(s) in RCA: 77] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
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