Yoshihiro K, Kinoshita J, Inagaki K, Yamanouchi C, Endo T, Murayama Y, Koyanagi M, Yagi A, Wakabayashi J, Kawaji S. Quantum Hall effect in silicon metal-oxide-semiconductor inversion layers: Experimental conditions for determination of h/e2.
PHYSICAL REVIEW. B, CONDENSED MATTER 1986;
33:6874-6896. [PMID:
9938012 DOI:
10.1103/physrevb.33.6874]
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