The O-Ta (Oxygen-Tantalum) system

Catalytic Activity and Electrochemical Stability of Ru1-xMxO2 (M = Zr, Nb, Ta): Computational and Experimental Study of the Oxygen Evolution Reaction

We use computations and experiments to determine the effect of substituting zirconium, niobium, and tantalum within rutile RuO2 on the structure, oxygen evolution reaction (OER) mechanism and activity, and electrochemical stability. Calculated electronic structures altered by Zr, Nb, and Ta show surface regions of electron density depletion and accumulation, along with anisotropic lattice parameter shifts dependent on the substitution site, substituent, and concentration. Consistent with theory, X-ray photoelectron spectroscopy experiments show shifts in binding energies of O-2s, O-2p, and Ru-4d peaks due to the substituents. Experimentally, the substituted materials showed the presence of two phases with a majority phase that contains the metal substituent within the rutile phase and a second, smaller-percentage RuO2 phase. Our experimental analysis of OER activity shows Zr, Nb, and Ta substituents at 12.5 atom % induce lower activity relative to RuO2, which agrees with computing the average of all sites; however, Zr and Ta substitution at specific sites yields higher theoretical OER activity than RuO2, with Zr substitution suggesting an alternative OER mechanism. Metal dissolution predictions show the involvement of cooperative interactions among multiple surface sites and the electrolyte. Zr substitution at specific sites increases activation barriers for Ru dissolution, however, with Zr surface dissolution rates comparable to those of Ru. Experimental OER stability analysis shows lower Ru dissolution from synthesized RuO2 and Zr-substituted RuO2 compared to commercial RuO2 and comparable amounts of Zr and Ru dissolved from Zr-substituted RuO2, aligned with our calculations.

Probing Oxidation-Driven Amorphized Surfaces in a Ta(110) Film for Superconducting Qubit

Recent advances in superconducting qubit technology have led to significant progress in quantum computing, but the challenge of achieving a long coherence time remains. Despite the excellent lifetime performance that tantalum (Ta) based qubits have demonstrated to date, the majority of superconducting qubit systems, including Ta-based qubits, are generally believed to have uncontrolled surface oxidation as the primary source of the two-level system loss in two-dimensional transmon qubits. Therefore, atomic-scale insight into the surface oxidation process is needed to make progress toward a practical quantum processor. In this study, the surface oxidation mechanism of native Ta films and its potential impact on the lifetime of superconducting qubits were investigated using advanced scanning transmission electron microscopy (STEM) techniques combined with density functional theory calculations. The results suggest an atomistic model of the oxidized Ta(110) surface, showing that oxygen atoms tend to penetrate the Ta surface and accumulate between the two outermost Ta atomic planes; oxygen accumulation at the level exceeding a 1:1 O/Ta ratio drives disordering and, eventually, the formation of an amorphous Ta2O5 phase. In addition, we discuss how the formation of a noninsulating ordered TaO1-δ (δ < 0.1) suboxide layer could further contribute to the losses of superconducting qubits. Subsurface oxidation leads to charge redistribution and electric polarization, potentially causing quasiparticle loss and decreased current-carrying capacity, thus affecting superconducting qubit coherence. The findings enhance the comprehension of the realistic factors that might influence the performance of superconducting qubits, thus providing valuable guidance for the development of future quantum computing hardware.

Preliminary investigation on the implementation of an artificial synapse using TaOx-based memristor with thermally oxidized active layer

This study presents a preliminary exploration of thermally oxidized TaOx-based memristors and their potential as artificial synapses. Unlike the 10-min annealed devices, which display instability due to current overshoots, the 5-min annealed device exhibits stable resistive switching, retention, and endurance characteristics. Moreover, our memristor showcases synaptic behaviors encompassing potentiation, depression, spike-timing-dependent plasticity, and excitatory postsynaptic currents. This synaptic emulation holds tremendous promise for applications in neuromorphic computing, offering the opportunity to replicate the adaptive learning principles observed in biological synapses. In addition, we evaluate the device's suitability for pattern recognition within a neural network using the modified National Institute of Standards and Technology dataset. Our assessment reveals that the Pt/TaOx/Ta memristor with an oxidized insulator achieves outstanding potential manifested by an accuracy of 93.25% for the identical pulse scheme and an impressive accuracy of 95.42% for the incremental pulse scheme.

Degradation of Ta2O5 / SiO2 dielectric cavity mirrors in ultra-high vacuum

In order for optical cavities to enable strong light-matter interactions for quantum metrology, networking, and scalability in quantum computing systems, their mirrors must have minimal losses. However, high-finesse dielectric cavity mirrors can degrade in ultra-high vacuum (UHV), increasing the challenges of upgrading to cavity-coupled quantum systems. We observe the optical degradation of high-finesse dielectric optical cavity mirrors after high-temperature UHV bake in the form of a substantial increase in surface roughness. We provide an explanation of the degradation through atomic force microscopy (AFM), X-ray fluorescence (XRF), selective wet etching, and optical measurements. We find the degradation is explained by oxygen reduction in Ta2O5 followed by growth of tantalum sub-oxide defects with height to width aspect ratios near ten. We discuss the dependence of mirror loss on surface roughness and finally give recommendations to avoid degradation to allow for quick adoption of cavity-coupled systems.

A Memristors-Based Dendritic Neuron for High-Efficiency Spatial-Temporal Information Processing

Diverse microscopic ionic dynamics help mediate the ability of a biological neural network to handle complex tasks with low energy consumption. Thus, rich internal ionic dynamics in memristors based on transition metal oxide are expected to provide a unique and useful platform for implementing energy-efficient neuromorphic computing. To this end, a titanium oxide (TiOx )-based interface-type dynamic memristor and an niobium oxide (NbOx )-based Mott memristor are integrated as an artificial dendrite and spike-firing soma, respectively, to construct a dendritic neuron unit for realizing high-efficiency spatial-temporal information processing. Further, a dendritic neural network is hardware-implemented for spatial-temporal information processing to highlight the computational advantages achieved by incorporating dendritic functions in the network. Human motion recognition is demonstrated using the Nanyang Technological University-Red Green Blue (NTU-RGB) dataset as a benchmark spatial-temporal task; it shows a nearly 20% improvement in accuracy for the memristors-based hardware incorporating dendrites and a 1000× advantage in power efficiency compared to that of the graphics processing unit (GPU). The dendritic neuron developed in this study can be considered a critical building block for implementing more bio-plausible neural networks that can manage complex spatial-temporal tasks with high efficiency.

Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

Amorphous metal oxides with analog resistive switching functions (i.e., continuous controllability of the electrical resistance) are gaining emerging interest due to their neuromorphic functionalities promising for energy efficient electronics. The mechanisms are currently attributed to field-driven migration of the constituent ions, but the applications are being hindered by the limited understanding of the physical mechanisms due to the difficulty in analyzing the causal ion migration, which occurs on a nanometer or even atomic scale. Here, the direct electrical transport measurement of analog resistive switching and ångström scale imaging of the causal ion migration is demonstrated in amorphous TaO_x (a-TaO_x) by conductive atomic force microscopy. Atomically flat thin films of a-TaO_x, which is a practical material for commercial resistive random access memory, are fabricated in this study, and the mechanisms of the three known types of analog resistive switching phenomena (current-dependent set, voltage-dependent reset, and time-dependent switching) are directly visualized on the surfaces. The observations indicate that highly analog type of resistive switching can be induced in a-TaO_x by inducing the continuous redox reactions for 2.0 < x < 2.5, which are characteristic of a-TaO_x. The measurements also demonstrate drastic control of the switching stochasticity, which is attributable to controlled segregation of a metastable a-TaO₂ phase. The findings provide direct clues for tuning the analog resistive switching characteristics of amorphous metal oxides and developing new functions for future neuromorphic computing.

Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware

To implement artificial neural networks (ANNs) based on memristor devices, it is essential to secure the linearity and symmetry in weight update characteristics of the memristor, and reliability in the cycle-to-cycle and device-to-device variations. This study experimentally demonstrated and compared the filamentary and interface-type resistive switching (RS) behaviors of tantalum oxide (Ta₂O₅ and TaO₂)-based devices grown by atomic layer deposition (ALD) to propose a suitable RS type in terms of reliability and weight update characteristics. Although Ta₂O₅ is a strong candidate for memristor, the filament-type RS behavior of Ta₂O₅ does not fit well with ANNs demanding analog memory characteristics. Therefore, this study newly designed an interface-type TaO₂ memristor and compared it to a filament type of Ta₂O₅ memristor to secure the weight update characteristics and reliability. The TaO₂-based interface-type memristor exhibited gradual RS characteristics and area dependency in both high- and low-resistance states. In addition, compared to the filamentary memristor, the RS behaviors of the TaO₂-based interface-type device exhibited higher suitability for the neuromorphic, symmetric, and linear long-term potentiation (LTP) and long-term depression (LTD). These findings suggest better types of memristors for implementing ionic memristor-based ANNs among the two types of RS mechanisms.

Exploring the growth and oxidation of 2D-TaS2on Cu(111)

In this work, the growth and stability towards O₂exposure of two dimensional (2D) TaS₂on a Cu(111) substrate is investigated. Large area (∼1 cm²) crystalline 2D-TaS₂films with a metallic character are prepared on a single crystal Cu(111) substrate via a multistep approach based on physical vapor deposition. Analytical techniques such as Auger electron spectroscopy, low energy electron diffraction, and photoemission spectroscopy are used to characterize the composition, crystallinity, and electronic structure of the surface. At coverages below one monolayer equivalent (ML), misoriented TaS₂domains are formed, which are rotated up to±13orelative to the Cu(111) crystallographic directions. The TaS₂domains misorientation decreases as the film thickness approaches 1 ML, at which the crystallographic directions of TaS₂and Cu(111) are aligned. The TaS₂film is found to grow epitaxially on Cu(111). As revealed by low energy electron diffraction in conjunction with an atomic model simulation, the (3 × 3) unit cells of TaS₂match the (4 × 4) supercell of Cu(111). Furthermore, the exposure of TaS₂to O₂, does not lead to the formation of a robust tantalum oxide film, only minor amounts of stable oxides being detected on the surface. Instead, the exposure of TaS₂films to O₂leads predominantly to a reduction of the film thickness, evidenced by a decrease in the content of both Ta and S atoms of the film. This is attributed to the formation of oxide species that are unstable and mainly desorb from the surface below room temperature. Temperature programmed desorption spectroscopy confirms the formation of SO₂, which desorbs from the surface between 100 and500 K.These results provide new insights into the oxidative degradation of 2D-TaS₂on Cu(111).

Hydrogen and Oxygen Production via Water Splitting in a Solar-Powered Membrane Reactor—A Conceptual Study

Among the processes for producing hydrogen and oxygen from water via the use of solar energy, water splitting has the advantage of being carried out in onestep. According to thermodynamics, this process exhibits conversions of practical interest at very high temperatures and needs efficient separation systems in order to separate the reaction products, hydrogen and oxygen. In this conceptual work, the behavior of a membrane reactor that uses two membranes perm-selective to hydrogen and oxygen is investigated in the temperature range 2000–2500 °C of interest for coupling this device with solar receivers. The effect of the reaction pressure has been evaluated at 0.5 and 1 bar while the permeate pressure has been fixed at 100 Pa. As a first result, the use of the membrane perm-selective to oxygen in addition to the hydrogen one has improved significantly the reaction conversion that, for instance, at 0.5 bar and 2000 °C, moves from 9.8% up to 18.8%. Based on these critical data, a preliminary design of a membrane reactor consisting of a Ta tubular membrane separating the hydrogen and a hafnia camera separating the oxygen is presented: optimaloperating temperature of the reactor results in being around 2500 °C, a value making impracticable its coupling with solar receivers even in view of an optimistic development of this technology. The study has verified that at 2000 °C with a water feed flow rate of 1000 kg h−1 about 200 and 100 m3 h−1 of hydrogen and oxygen are produced. In this case, a surface of the hafnia membrane of the order of hundreds m2 is required: the design of such a membrane device may be feasible when considering special reactor configurations.

Selective activation of memristive interfaces in TaO x -based devices by controlling oxygen vacancies dynamics at the nanoscale

The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta₂O₅-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling both the electroforming process and the (a)symmetry of the applied stimuli, and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different nanoscopic zones of the active Ta₂O_5-x layer: a central one and two quasi-symmetric interfaces with reduced TaO_2-h(y) layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide-Ta-oxide-and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple-analogic-intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.

The origin of the exceptionally low activation energy of oxygen vacancy in tantalum pentoxide based resistive memory

It is well known that collective migrations of oxygen vacancies in oxide is the key principle of resistance change in oxide-based resistive memory (OxRAM). The practical usefulness of OxRAM mainly arises from the fact that these oxygen vacancy migrations take place at relatively low operating voltages. The activation energy of oxygen vacancy migration, which can be inferred from the operational voltage of an OxRAM, is much smaller compared to the experimentally measured activation energy of oxygen, and the underlying mechanism of the discrepancy has not been highlighted yet. We ask this fundamental question in this paper for tantalum oxide which is one of the most commonly employed oxides in OxRAMs and try the theoretical answer based on the first-principles calculations. From the results, it is proven that the exceptionally large mobility of oxygen vacancy expected by the switching model can be well explained by the exceptionally low activation barrier of positively charged oxygen vacancy within the two-dimensional substructure.

Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices

Electroforming-free resistive switching in memristors is essential to reliably achieving the performance of high switching speed, high endurance, good signal retention, and low power consumption expected for next-generation computing devices. Although there have been various approaches to resolve the issues observed with the electroforming process in oxide-based memory devices, most of them end up having high SET and RESET voltages and short lifetimes. We present a heterojunction interface of oxygen-vacancy-defect-rich ultrananocrystalline TiOx and TaOx films used as the switching matrix, which enables high-quality electroforming-free switching with a much lower programming voltage (+0.5-0.8 V), a high endurance of over 104 cycles and good retention performance with an estimated device lifetime of over 10 years. The electroforming-free switching behavior is governed by migration of oxygen vacancies driven by electric field localization that is imposed by the ultrananocrystalline nature of the TaOx film, serving as the switching matrix, with the TiOx film serving as an additional oxygen vacancy source to reduce the overall resistivity of TaOx and provide low-bias rectification. The ability to perform electroforming-free resistive switching along with excellent switching repeatability and retention capabilities for various digital and analog programmable voltages enables high scalability and large density integration of the cross-bar ReRAM framework.

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x∼ 1

The resistive switching in metal-oxide thin films typically occurs via modulation of the oxygen content in nano-sized conductive filaments. For Ta₂O₅-based resistive switching devices, the two current models consider filaments composed of oxygen vacancies and those containing metallic Ta clusters. The present work tries to resolve this dispute. The filaments in Ta₂O₅ were formerly shown to exhibit the same electrical transport mechanisms as TaO_x thin films with x∼ 1.0. In this paper, sputtered thin films of pure β-Ta and of TaO_x with different oxygen concentrations are studied and compared in terms of their structure and electrical transport. The structural analysis reveals the presence of Ta clusters in the TaO_x films. Identical electrical transport characteristics were observed in the TaO_x films with x∼ 1.0 and in the β-Ta film. Both show the same transport mechanism, a carrier concentration on the order of 10²² cm^-3 and a positive magnetoresistance associated with weak antilocalization at T < 30 K. It is concluded that the electrical transport in the TaO_x films with x∼ 1.0 is dominated by percolation through Ta clusters. This means that the transport in the filaments is also determined by percolation through Ta clusters, strongly supporting the metallic Ta filament model.

Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaO x-Based RRAM

Controlled resistive switching by using an optimized 2 nm thick MoS₂ interfacial layer and the role of top electrodes (TEs) on ascorbic acid (AA) sensing in a TaO _x-based resistive random access memory (RRAM) platform have been investigated for the first time. Both the high-resolution transmission electron microscopy (HRTEM) image and depth profile from energy dispersive X-ray spectroscopy confirm the presence of each layer in IrO _x/Al₂O₃/TaO _x/MoS₂/TiN structure. The pristine device including the IrO _x TE with the 2 nm thick interfacial layer shows the highest uniform rectifying direct current endurance >1000 cycles and a large rectifying ratio >3.2 × 10⁴, and a high nonlinearity factor >700 is obtained, greater than that of Pt and Ru TEs. After formation, this IrO _x device produces bipolar resistive switching characteristics and a long program/erase (P/E) endurance >10⁷ cycles at a low operation current of <50 μA with small pulse width of 100 ns. The stressed device shows a reduced Al₂O₃/TaO _x interface from the HRTEM image, which is owing to O^2- ions' migration toward TiN electrode. By adjusting the RESET voltage and current level, consecutive >100 complementary resistive switching as well as long P/E endurance of >10⁶ cycles are obtained. Schottky barrier height modulation at a low field is observed owing to reduction-oxidation of the TE, which is evidenced through reversible AA detection. At a higher field, Fowler-Nordheim tunneling and hopping conduction are observed. Ascorbic acid detection with a low concentration of 1 pM by using a porous IrO _x/Al₂O₃/TaO _x/MoS₂/TiN RRAM device directly is an additional novelty of this work, which will be useful in future for early diagnosis of scurvy.

Formation of the Conducting Filament in TaO x-Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation

The distribution of tantalum and oxygen ions in electroformed and/or switched TaO _x-based resistive switching devices has been assessed by high-angle annular dark-field microscopy, X-ray energy-dispersive spectroscopy, and electron energy-loss spectroscopy. The experiments have been performed in the plan-view geometry on the cross-bar devices producing elemental distribution maps in the direction perpendicular to the electric field. The maps revealed an accumulation of +20% Ta in the inner part of the filament with a 3.5% Ta-depleted ring around it. The diameter of the entire structure was approximately 100 nm. The distribution of oxygen was uniform with changes, if any, below the detection limit of 5%. We interpret the elemental segregation as due to diffusion driven by the temperature gradient, which in turn is induced by the spontaneous current constriction associated with the negative differential resistance-type I- V characteristics of the as-fabricated metal/oxide/metal structures. A finite-element model was used to evaluate the distribution of temperature in the devices and correlated with the elemental maps. In addition, a fine-scale (∼5 nm) intensity contrast was observed within the filament and interpreted as due phase separation of the functional oxide in the two-phase composition region. Understanding the temperature-gradient-induced phenomena is central to the engineering of oxide memory cells.

Thermal Analysis of Tantalum Carbide-Hafnium Carbide Solid Solutions from Room Temperature to 1400 °C

The thermogravimetric analysis on TaC, HfC, and their solid solutions has been carried out in air up to 1400 °C. Three solid solution compositions have been chosen: 80TaC-20 vol % HfC (T80H20), 50TaC-50 vol % HfC (T50H50), and 20TaC-80 vol % HfC (T20H80), in addition to pure TaC and HfC. Solid solutions exhibit better oxidation resistance than the pure carbides. The onset of oxidation is delayed in solid solutions from 750 °C for pure TaC, to 940 °C for the T50H50 sample. Moreover, T50H50 samples display the highest resistance to oxidation with the retention of the initial carbides. The oxide scale formed on the T50H50 sample displays mechanical integrity to prevent the oxidation of the underlying carbide solid solution. The improved oxidation resistance of the solid solution is attributed to the reaction between Ta2O5 and HfC, which stabilizes the volume changes induced by the formation of Ta2O5 and diminishes the generation of gaseous products. Also, the formation of solid solutions disturbs the atomic arrangement inside the lattice, which delays the reaction between Ta and O. Both of these mechanisms lead to the improved oxidation resistances of TaC-HfC solid solutions.

Capability Study of Ti, Cr, W, Ta and Pt as Seed Layers for Electrodeposited Platinum Films on γ-Al₂O₃ for High Temperature and Harsh Environment Applications

High temperature surface acoustic wave sensors based on radio frequency identification technology require adequate antennas of high efficiency and thermal stability for the signal transmission. Platinum is well known and frequently used as a material of choice for high temperature and harsh environment applications because of the high melting point and its chemical stability. Therefore, one way to realize high temperature stable antennas is the combination of a Pt metallization on an Al 2 O 3 substrate. As a cost-effective technique, the Pt film is deposited via electrochemical deposition. For this growth procedure, a pre-deposited metallization on the Al 2 O 3 layer is required. This paper analyzes the influence of various seed layers (Ta, Ti, W, Cr, Pt) on the morphology, stability and electrical properties of the electrochemically-grown Pt thick film after heat treatments up to 1000 ∘ C in air. We find an oxidation of all adhesion layers except for Pt, for which the best electrical properties were measured. Although significant areas of the films delaminate from the substrate, individual anchor structures retain a stable connection between the Pt layer and the rough Al 2 O 3 substrate.

Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

A novel vertical 3D RRAM structure with greatly improved reliability behavior is proposed and experimentally demonstrated through basically compatible process featuring self-localized switching region by sidewall electrode oxidation. Compared with the conventional structure, due to the effective confinement of the switching region, the newly-proposed structure shows about two orders higher endurance (>10(8) without verification operation) and better retention (>180h@150 °C), as well as high uniformity. Corresponding model is put forward, on the base of which thorough theoretical analysis and calculations are conducted as well, demonstrating that, resulting from the physically-isolated switching from neighboring cells, the proposed structure exhibits dramatically improved reliability due to effective suppression of thermal effects and oxygen vacancies diffusion interference, indicating that this novel structure is very promising for future high density 3D RRAM application.

Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaO(x) Thin Film

A Ta/TaOx/Pt stacked capacitor-like device for resistive switching was fabricated and examined. The tested device demonstrated stable resistive switching characteristics including uniform distribution of resistive switching operational parameters, highly promising endurance, and retention properties. To reveal the resistive switching mechanism of the device, micro structure analysis using high-resolution transmission electron microscope (HR-TEM) was performed. From the observation results, two different phases of Ta-metal clusters of cubic α-Ta and tetragonal β-Ta were founded in the amorphous TaOx mother-matrix after the device was switched from high resistance state (HRS) to low resistance state (LRS) by externally applied voltage bias. The observed Ta metal clusters unveiled the origin of the electric conduction paths in the TaOx thin film at the LRS.

TaOx-based resistive switching memories: prospective and challenges

Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production.

Oxide heterostructure resistive memory

Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on-states and high endurance. Each layer can be tailed for a specific function during resistance switching, thus greatly improving the degree of control and flexibility for optimized device performance.

Hidden structural order in orthorhombic Ta2O5

We investigate using first-principles calculations the atomic structure of the orthorhombic phase of Ta(2)O(5). Although this structure has been studied for decades, the correct structural model is controversial owing to the complication of structural disorder. We identify a new low-energy high-symmetry structural model, where all Ta and O atoms have the correct formal oxidation states of +5 and -2, respectively, and the experimentally reported triangular lattice symmetry of the Ta sublattice appears dynamically at finite temperatures. To understand the complex atomic structure of the Ta(2)O(3) plane, a triangular graph-paper representation is devised and used alongside oxidation state analysis to reveal infinite variations of the low-energy structural model. The structural disorder of Ta(2)O(5) observed in experiments is attributed to the intrinsic structural variations, and oxygen vacancies that drive the collective relaxation of the O sublattice.

Continuous electrical tuning of the chemical composition of TaO(x)-based memristors

TaO(x)-based memristors have recently demonstrated both subnanosecond resistance switching speeds and very high write/erase switching endurance. Here we show that the physical state variable that enables these properties is the oxygen concentration in a conduction channel, based on the measurement of the thermal coefficient of resistance of different TaO(x) memristor states and a set of reference Ta-O films of known composition. The continuous electrical tunability of the oxygen concentration in the channel, with a resolution of a few percent, was demonstrated by controlling the write currents with a one transistor-one memristor (1T1M) circuit. This study demonstrates that solid-state chemical kinetics is important for the determination of the electrical characteristics of this relatively new class of device.

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

We apply our understanding of the physics of failure in the post-breakdown regime of high-κ dielectric-based conventional logic transistors having a metal-insulator-semiconductor (MIS) structure to interpret the mechanism of resistive switching in resistive random-access memory (RRAM) technology metal-insulator-metal (MIM) stacks. Oxygen vacancies, gate metal migration and metal filament formation in the gate dielectric which constitute the chemistry of breakdown in the post-breakdown stage of logic gate stacks are attributed to be the mechanisms responsible for the SET process in RRAM technology. In this paper, we draw an analogy between the breakdown study in logic devices and filamentation physics in resistive non-volatile memory.