The Au−Ge (Gold-Germanium) system

Thermodynamic Modeling of the Au-Ge-X (X = In, Sb, Si, Zn) Ternary Systems

In this study, the CALPHAD approach was employed to model the thermodynamics of the Au-Ge-X (X = In, Sb, Si, Zn) ternary systems, leveraging experimental phase equilibria data and previous assessments of related binary subsystems. The solution phases were modeled as substitutional solutions, and their excess Gibbs energies were expressed using the Redlich-Kister polynomial. Owing to the unavailability of experimental data, the solubility of the third elements in the Au-In, Au-Sb, and Au-Zn binary intermetallic compounds was excluded from consideration. Additionally, stable ternary intermetallic compounds were not reported in the literature and, thus, were not taken into account in the present thermodynamic calculations. Calculations of liquidus projections, isothermal sections, and vertical sections for these ternary systems have been performed, aligning with existing experimental findings. These thermodynamic parameters form a vital basis for creating a comprehensive thermodynamic database for Au-Ge-based alloys, which is essential for the design and development of new high-temperature Pb-free solders.

Direct growth of germanium nanowires on glass

We report a detailed characterization of Ge NWs directly grown on glass by a MOVPE system, showing how different growth parameters can affect the final outcome and comparing NWs grown on a monocrystalline Ge(111) substrate with NWs grown on amorphous glass. Our experimental results indicate that the choice of the substrate does not affect any of the relevant morphological, crystallographic or electrical properties of Ge NWs. Lengths are in the 20-30 micrometer range with minimal tapering, while growth rates are very similar to to NWs grown on Ge(111); TEM and Raman characterization show a very good crystallinity of measured nanostructures. We have also analyzed the growth process on glass and we were able to reach a conclusion on the specific growth mechanism for Ge NWs on amorphous substrates. Our findings demonstrate that glass is a valid option as cheap substrate for the mass production of these nanostructures.

Atomic Transport in Au-Ge Droplets: Brownian and Electromigration Dynamics

The deposition of Au on Ge(111)-sqrt[3]×sqrt[3]-Au above the eutectic temperature results in the formation of AuGe liquid droplets that reach the liquidus composition by digging a hole in the Ge substrate. The combination of low-energy electron microscopy and atomic force microscopy measurements shows that AuGe droplets randomly migrate or electromigrate under an applied electric current dragging their underneath hole. The droplet motion is due to a mass transport phenomenon based on Ge dissolution at the droplet front and Ge crystallization at its rear. At high temperature the mass transport is limited by attachment or detachment at the solid-liquid interface and the activation energy is 1.05±0.3  eV. At low temperature the effective activation energy increases as a function of the droplet radius. This behavior is attributed to the nucleation of 2D layers at the faceted liquid-solid interface.

Catalyst-substrate interaction and growth delay in vapor-liquid-solid nanowire growth

Understanding of the initial stage of nanowire growth on a bulk substrate is crucial for the rational design of nanowire building blocks in future electronic and optoelectronic devices. Here, we provide in situ scanning electron microscopy and Auger microscopy analysis of the initial stage of Au-catalyzed Ge nanowire growth on different substrates. Real-time microscopy imaging and elementally resolved spectroscopy clearly show that the catalyst dissolves the underlying substrate if held above a certain temperature. If the substrate dissolution is blocked (or in the case of heteroepitaxy) the catalyst needs to be filled with nanowire material from the external supply, which significantly increases the initial growth delay. The experiments presented here reveal the important role of the substrate in metal-catalyzed nanowire growth and pave the way for different growth delay mitigation strategies.

Producing Atomically Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires by Thermal Oxidation

Compositional abruptness of the interfaces is one of the important factors to determine the performance of Group IV semiconductor heterojunction (Si/Ge or Si/SiGe) nanowire devices. However, forming abrupt interfaces in the nanowires using the common vapor-liquid-solid (VLS) method is restricted because large solubility of Si and Ge in the Au eutectic liquid catalyst makes gradual composition change at the heterojunction after switching the gas phase components. According to the VLS growth mechanism, another possible approach to form an abrupt interface is making a change of the semiconductor concentration in the eutectic liquid before precipitation of the second phase. Here we show that the composition in AuSiGe eutectic liquid on SiGe nanowires of low Ge concentration (≤6%) can be altered by thermal oxidation at 700 °C. During the oxidation process, only Si is oxidized on the surface of the eutectic liquid, and the Ge/Si ratio in the eutectic liquid is increased. The subsequently precipitated SiGe step at the liquid/solid interface has a higher Ge concentration (∼20%), and a compositionally abrupt interface is produced in the nanowires. The growth mechanism of the heterojunction includes diffusion of Si and Ge atoms on nanowire surface into the AuSiGe eutectic liquid and step nucleation at the liquid/nanowire interface.

Controlled growth of hexagonal gold nanostructures during thermally induced self-assembling on Ge(001) surface

Nano-sized gold has become an important material in various fields of science and technology, where control over the size and crystallography is desired to tailor the functionality. Gold crystallizes in the face-centered cubic (fcc) phase, and its hexagonal closed packed (hcp) structure is a very unusual and rare phase. Stable Au hcp phase has been reported to form in nanoparticles at the tips of some Ge nanowires. It has also recently been synthesized in the form of thin graphene-supported sheets which are unstable under electron beam irradiation. Here, we show that stable hcp Au 3D nanostructures with well-defined crystallographic orientation and size can be systematically created in a process of thermally induced self-assembly of thin Au layer on Ge(001) monocrystal. The Au hcp crystallite is present in each Au nanostructure and has been characterized by different electron microscopy techniques. We report that a careful heat treatment above the eutectic melting temperature and a controlled cooling is required to form the hcp phase of Au on a Ge single crystal. This new method gives scientific prospects to obtain stable Au hcp phase for future applications in a rather simple manner as well as redefine the phase diagram of Gold with Germanium.

Controlling Nanowire Growth by Light

Individual Au catalyst nanoparticles are used for selective laser-induced chemical vapor deposition of single germanium nanowires. Dark-field scattering reveals in real time the optical signatures of all key constituent growth processes. Growth is initially triggered by plasmonic absorption in the Au catalyst, while once nucleated the growing Ge nanowire supports magnetic and electric resonances that then dominate the laser interactions. This spectroscopic understanding allows real-time laser feedback that is crucial toward realizing the full potential of controlling nanomaterial growth by light.

Formation of alternating interfacial layers in Au-12Ge/Ni joints

Au-Ge alloys are promising materials for high-power and high-frequency packaging, and Ni is frequently used as diffusion barriers. This study investigates interfacial reactions in Au-12Ge/Ni joints at 300 °C and 400 °C. For the reactions at 300 °C, typical interfacial morphology was observed and the diffusion path was (Au) + (Ge)/NiGe/Ni5Ge3/Ni. However, an interesting phenomenon--the formation of (Au,Ni,Ge)/NiGe alternating layers - was observed for the reactions at 400 °C. The diffusion path across the interface was liquid/(Au,Ni,Ge)/NiGe/· · ·/(Au,Ni,Ge)/NiGe/Ni2Ge/Ni. The periodic thermodynamic instability at the NiGe/Ni2Ge interface caused the subsequent nucleation of new (Au,Ni,Ge)/NiGe pairs. The thermodynamic foundation and mechanism of formation of the alternating layers are elaborated in this paper.

Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation

We report on the directed synthesis of germanium oxide (GeO(x)) nanowires (NWs) by locally catalyzed thermal oxidation of aligned arrays of gold catalyst-tipped germanium NWs. During oxygen anneals conducted above the Au-Ge binary eutectic temperature (T > 361 °C), one-dimensional oxidation of as-grown Ge NWs occurs by diffusion of Ge through the Au-Ge catalyst droplet, in the presence of an oxygen containing ambient. Elongated GeO(x) wires grow from the liquid catalyst tip, consuming the adjoining Ge NWs as they grow. The oxide NWs' diameter is dictated by the catalyst diameter and their alignment generally parallels that of the growth direction of the initial Ge NWs. Growth rate comparisons reveal a substantial oxidation rate enhancement in the presence of the Au catalyst. Statistical analysis of GeO(x) nanowire growth by ex situ transmission electron microscopy and scanning electron microscopy suggests a transition from an initial, diameter-dependent kinetic regime, to diameter-independent wire growth. This behavior suggests the existence of an incubation time for GeO(x) NW nucleation at the start of vapor-liquid-solid oxidation.

Real-time observation of impurity diffusion in silicon nanowires

Solid-state diffusion of the transition metal impurities, gold (Au), nickel (Ni), and copper (Cu), in silicon (Si) nanowires was studied by in situ transmission electron microscopy. Compared to diffusion in a bulk crystal, Au diffusion is extremely slow when the amount of metal is limited but significantly enhanced when an unlimited supply is available. Cu and Ni diffusion leads to rapid silicide formation but slows considerably with physical encapsulation by a volume-restricting carbon shell.

Relaxation of Grain Boundaries in Au {110} Mazed Bicrystal Thin Films Observed by HREM

Thin films of gold can be grown on {001} Ge single crystal substrates in two equivalent {110} orientation variants, related to each other by a 90° rotation about the surface normal. The morphology of the films is that of a mazed bicrystal, a polycrystalline film with many randomly distributed columnar grains in only two orientations. All grain boundaries are of the type S99 and display pure tilt character. In this work, we report on observations of the structural relaxation of these grain boundaries, with special emphasis on their characteristic behavior at the intersection with free surfaces and their evolution during thermal annealing.

Microstructure and Coarsening in Mazed Bicrystal Films of Au Grown on Ge Substrates

Thin films of gold (Au) were grown on single crystal germanium (Ge) or silicon (Si) substrates using physical vapor deposition (PVD). The resulting microstructure was that of a mazed bicrystal in which two equivalent grain orientations, related to each other by a 90° rotation, are arranged in a morphology of irregularly shaped, convoluted grains. Quantitative morphological analysis showed a strong dependence of grain shape on size, with larger grains being more convoluted and smaller grains more compact. The evolution of grain size, anisotropy and shape during heating in the temperature range from 300-340 °C was studied by in-situ transmission electron microscopy (TEM).

Hexagonal close-packed structure of au nanocatalysts solidified after ge nanowire vapor-liquid-solid growth

We report that approximately 10% of the Au catalysts that crystallize at the tips of Ge nanowires following growth have the close-packed hexagonal crystal structure rather than the equilibrium face-centered-cubic structure. Transmission electron microscopy results using aberration-corrected imaging, and diffraction and compositional analyses, confirm the hexagonal phase in these 40-50 nm particles. Reports of hexagonal close packing in Au, even in nanoparticle form, are rare, and the observations suggest metastable pathways for the crystallization process. These results bring new considerations to the stabilization of the liquid eutectic alloy at low temperatures that allows for vapor-liquid-solid growth of high quality, epitaxial Ge nanowires below the eutectic temperature.

Phase equilibrium and nucleation in VLS-grown nanowires

Phase diagrams accounting for capillarity and surface stress in VLS-grown nanowires have been calculated, and linearized forms for the compositions of the solid and liquid are given. The solid-vapor interfacial energy causes a significant depression of the liquidus, and the impurity concentration in the wire decreases with decreasing wire diameter. Nucleation calculations give upper bounds on the nucleation temperature and liquid supersaturation during growth that are consistent with measurements in the Au-Ge system.