DFT study of the electronic, vibrational, and optical properties of SnO2

Factors Influencing Recognition Capability of Inverse Opal Structured Photonic Crystal Sensors

Nowadays, many kinds of colloidal photonic crystal (PC) sensors with inverse opal (IO) structures have been developed. However, there are few systematic studies on the factors influencing their recognition capability and responsiveness capability. In this paper, the relationships between recognition capability of IO structured PC sensors and all the parameters in Bragg–Snell’s law have been explored. In addition, research on the recognition ability of PC sensors typically focuses only on the refractive index difference between the identified substances. Herein, we define two concepts, namely the absolute refractive index difference and the relative refractive index difference, and prove that the recognition ability not only relies on the absolute refractive index between the identified substances, but also on the relative refractive index. Bragg–Snell’s law analysis confirms that the responsiveness capability is directly proportional to the void size of the IO structure, which is also confirmed by the finite difference time domain (FDTD) method. It is believed that these systematic studies have important guiding significance for creating advanced IO structured PC sensors.

First-Principles Exploration into the Physical and Chemical Properties of Certain Newly Identified SnO2 Polymorphs

Tin dioxide (SnO₂) is one of the transparent conductive oxides that has aroused the interest of researchers due to its wide range of applications. SnO₂ exists in a variety of polymorphs with different atomic structures and Sn-O connectivity. However, there are no comprehensive studies on the physical and chemical properties of SnO₂ polymorphs. For the first time, we investigated the structural stability and ground-state properties of 20 polymorphs in the sequence of experimental structures determined by density functional theory. We used a systematic analytical method to determine the viability of polymorphs for practical applications. Among the structurally stable polymorphs, Fm3̅m, I4₁/amd, and Pnma-II are dynamically unstable. As far as we know, no previous research has investigated the electronic properties of SnO₂ polymorphs from the hybrid functional of Heyd, Scuseria, and Erhzerhof (HSE06) except P4₂/mnm, with calculated band gap values ranging from 2.15 to 3.35 eV. The dielectric properties of the polymorphs have been reported, suggesting that SnO₂ polymorphs are also suitable for energy storage applications. The bonding nature of the global minimum rutile structure is analyzed from charge density, charge transfer, and electron localization function. The Imma-SnO₂ polymorph is mechanically unstable, while the remaining polymorphs met all stability criteria. Further, we calculated Raman and IR spectra, elastic moduli, anisotropic factors, and the direction-dependent elastic moduli of stable polymorphs. Although there are many polymorphic forms of SnO₂, rutile is a promising candidate for many applications; however, we investigated the feasibility of the remaining polymorphs for practical applications.

Highly sensitive detection of Hg2+ employing SPR sensor modified with chitosan/poly (vinyl alcohol)/SnO2 film

Water contamination by mercury ions (Hg²⁺) causes irreversible and serious effect on the ambient environment, ecological systems, and human health, necessitating further improvement of Hg²⁺ monitoring at low concentrations. Here, we proposed a novel surface plasmon resonance (SPR) sensor for Hg²⁺ detection with desirable advantages of high sensitivity, simple operation, label-free, and low cost, in which the chitosan/poly (vinyl alcohol)/SnO₂ composite film was modified on sensing surface as the active layer for sensitivity enhancement. Benefiting from the relatively high refractive index of SnO₂ nanoparticles, the evanescent field generated at the metal-solution interface can be significantly enhanced, which results in a 5 times improvement of sensitivity. Through appropriate optimization in the aspects of componential constitutions, the sensor exhibits excellent sensitivity of 25.713 nm/μg/L and ultra-low calculated detection limit of 6.61 ng/L(32.95 pM). Such detection limit is strikingly lower than the limitation (10 nM) in drinking water set by the US Environmental Protection Agency. In addition, the as-prepared sensor presents relatively high selectivity for Hg²⁺, attributing to plenty of binding sites for specific adsorption produced by functionalized chitosan/poly (vinyl alcohol) composites, which have been furtherly verified by characterization of FTIR and XPS spectra. The proposed sensor also exhibits great repeatability and good time stability for 15 days. This work provides a promising strategy for developing high-performance SPR sensor for Hg²⁺ detection and a prospective application in environmental monitoring.

Defect Processes in Halogen Doped SnO2

In the present study, we performed density functional theory calculations (DFT) to investigate structural changes and their impact on the electronic properties in halogen (F, Cl, Br, and I) doped tin oxide (SnO2). We performed calculations for atoms intercalated either at interstitial or substitutional positions and then calculated the electronic structure and the optical properties of the doped SnO2. In all cases, a reduction in the bandgap value was evident, while gap states were also formed. Furthermore, when we insert these dopants in interstitial and substitutional positions, they all constitute a single acceptor and donor, respectively. This can also be seen in the density of states through the formation of gap states just above the valence band or below the conduction band, respectively. These gap states may contribute to significant changes in the optical and electronic properties of SnO2, thus affecting the metal oxide’s suitability for photovoltaics and photocatalytic devices. In particular, we found that iodine (I) doping of SnO2 induces a high dielectric constant while also reducing the oxide’s bandgap, making it more efficient for light-harvesting applications.

A first-principles study of the electronic and structural properties of Sb and F doped SnO2 nanocrystals

We examine the electronic properties of Sb and F doped SnO2 nanocrystals up to 2.4 nm in diameter. A real-space pseudopotential implementation of density functional theory is employed within the local density approximation. We calculate electron binding energies and dopant formation energies as function of nanocrystal size, dopant concentration, and dopant species. Structural changes for different dopant species are also investigated. Our study should provide useful information for the design of transparent conducting oxides at the nanoscale.

Prominent reducing gas-sensing performances of n-SnO2 nanowires by local creation of p-n heterojunctions by functionalization with p-Cr2O3 nanoparticles

A novel approach to improving the reducing gas-sensing properties of n-type nanowires (NWs), by locally creating p-n heterojunctions with p-type nanoparticles (NPs), is proposed. As a model system, this work investigates the sensing behaviors of n-SnO2 NWs functionalized with p-Cr2O3 NPs. Herein, n-SnO2 NWs demonstrate greatly improved reducing gas-sensing performance when functionalized with p-Cr2O3 NPs. Conversely, such functionalization deteriorates the oxidizing gas-sensing properties of n-SnO2 NWs. These phenomena are closely related to the local suppression of the conduction channel of n-type NWs, in the radial direction, beneath the p-n heterojunction by the flow of charge carriers. The approach used in this work can be used to fabricate sensitive reducing-gas sensors based on n-type NWs.

Solution-processable metal oxide semiconductors for thin-film transistor applications

In this review, we discuss the merits of solution-processed metal oxide semiconductors and consider their application in thin-film transistors for large-area electronics.

Low threshold amplified spontaneous emission from tin oxide quantum dots: a instantiation of dipole transition silence semiconductors

Direct bandgap semiconductors, such as In2O3, Cu2O, and SnO2, have enormous applications in photochemistry, photovoltaics, and optoelectronics. Due to the same parity of conduction and valence bands, the dipole transition is silent in these direct bandgap semiconductors. The low band-to-band transition efficiency prevents them from high intensity light emission or absorption. Here, we report the fabrication of SnO2 quantum dots (QDs) with sizes less than the exciton Bohr radius by a facile "top-down" strategy based on laser fragmentation of SnO in water. The SnO2 QDs shows exciton emission at ∼300 nm with a high quantum yield of ~17%. Amplified spontaneous exciton emission is also achieved from a thin layer of SnO2 QDs dispersed in PEG400 on a quartz substrate. Therefore, we have shown that SnO2 QDs can be a potential luminescent material suitable for the realization of ultraviolet B lasing devices.

Ab initio and shell model studies of structural, thermoelastic and vibrational properties of SnO2 under pressure

The pressure dependences of the structural, thermoelastic and vibrational properties of SnO2 in its rutile phase are studied, as well as the pressure-induced transition to a CaCl2-type phase. These studies have been performed by means of ab initio (AI) density functional theory calculations using the localized basis code SIESTA. The results are employed to develop a shell model (SM) for application in future studies of nanostructured SnO2. A good agreement of the SM results for the pressure dependences of the above properties with the ones obtained from present and previous AI calculations as well as from experiments is achieved. The transition is characterized by a rotation of the Sn-centered oxygen octahedra around the tetragonal axis through the Sn. This rotation breaks the tetragonal symmetry of the lattice and an orthorhombic distortion appears above the critical pressure P(c). A zone-center phonon of B1g symmetry in the rutile phase involves such rotation and softens on approaching Pc. It becomes an Ag mode which stabilizes with increasing pressure in the CaCl2 phase. This behavior, together with the softening of the shear modulus (C11-C12)/2 related to the orthorhombic distortion, allows a precise determination of a value for Pc. An additional determination is provided by the splitting of the basal plane lattice parameters. Both the AI and the experimentally observed softening of the B(1g) mode are incomplete, indicating a small discontinuity at the transition. However, all results show continuous changes in volume and lattice parameters, indicating a second-order transition. All these results indicate that there should be sufficient confidence for the future employment of the shell model.

Study of the oxygen vacancy influence on magnetic properties of Fe- and Co-doped SnO2 diluted alloys

Transition-metal (TM)-doped diluted magnetic oxides (DMOs) have attracted attention from both experimental and theoretical points of view due to their potential use in spintronics towards new nanostructured devices and new technologies. In the present work, we study the magnetic properties of Sn0.96TM0.04O2 and Sn0.96TM0.04O1.98(VO)0.02, where TM = Fe and Co, focusing in particular in the role played by the presence of O vacancies nearby the TM. The calculated total energy as a function of the total magnetic moment per cell shows a magnetic metastability, corresponding to a ground state, respectively, with 2 and 1 μB/cell, for Fe and Co. Two metastable states, with 0 and 4 μB/cell were found for Fe, and a single value, 3 μB/cell, for Co. The spin-crossover energies (ES) were calculated. The values are ES0/2 = 107 meV and ES4/2 = 25 meV for Fe. For Co, ES3/1 = 36 meV. By creating O vacancies close to the TM site, we show that the metastablity and ES change. For iron, a new state appears, and the state with zero magnetic moment disappears. The ground state is 4 μB/cell instead of 2 μB/cell, and the energy ES2/4 is 30 meV. For cobalt, the ground state is then found with 3 μB/cell and the metastable state with 1 μB/cell. The spin-crossover energy ES1/3 is 21 meV. Our results suggest that these materials may be used in devices for spintronic applications that require different magnetization states.

Electronic and magnetic properties of SnO2/CrO2 thin superlattices

In this article, using first-principles electronic structure calculations within the spin density functional theory, alternated magnetic and non-magnetic layers of rutile-CrO2 and rutile-SnO2 respectively, in a (CrO2)n(SnO2)n superlattice (SL) configuration, with n being the number of monolayers which are considered equal to 1, 2, ..., 10 are studied. A half-metallic behavior is observed for the (CrO2)n(SnO2)n SLs for all values of n. The ground state is found to be FM with a magnetic moment of 2 μB per chromium atom, and this result does not depend on the number of monolayers n. As the FM rutile-CrO2 is unstable at ambient temperature, and known to be stabilized when on top of SnO2, the authors suggest that (CrO2)n(SnO2)n SLs may be applied to spintronic technologies since they provide efficient spin-polarized carriers.