Quantitative depth profiling of thin layers

Capabilities of Femtosecond Laser Ablation Inductively Coupled Plasma Mass Spectrometry for Depth Profiling of Thin Metal Coatings

The capabilities of ultraviolet femtosecond laser ablation inductively coupled plasma mass spectrometry (UV-fs-LA-ICPMS) for depth profile analysis of thin metal coatings were evaluated. A standard sample consisting of a single Cr thin layer of 500 nm +/- 5% on a Ni substrate was used. A fast washout was obtained by a high-efficiency aerosol dispersion ablation cell (V approximately 1 cm3), which allowed single-shot analysis with increased depth resolution. Laser ablation was performed in helium at atmospheric pressure conditions. A laser repetition rate of 1 Hz and low laser fluence (<0.5 J/cm2) were used. Very low ablation rates (<10 nm/pulse) were determined by atomic force microscopy (AFM). Information about the crater geometry and morphology was investigated using scanning electron microscopy and AFM. The depth resolution, calculated via the maximum slope of the tangent in the layer interface region, was smaller than 300 nm. Our data indicate that UV-fs-LA-ICPMS represents a powerful combination of high lateral and depth resolution for the analysis of thin metal coatings. Moreover, an overall ion yield, defined as the ratio of detected ions and ablated atoms, of approximately 5 x 10-5 was estimated for the chromium layer under the operating conditions chosen. The absolute amount of ablated material per laser pulse was approximately 1 pg, which corresponds to a detection limit of 180 microg/g.

Femtosecond laser ablation elemental mass spectrometry

Laser ablation mass spectrometry (LA-MS) has always been an interesting method for the elemental analysis of solid samples. Chemical analysis with a laser requires small amounts of material. Depending on the analytical detection system, subpicogram quantities may be sufficient. In addition, a focused laser beam permits the spatial characterization of heterogeneity in solid samples typically with micrometer resolution in terms of lateral and depth dimensions. With the advent of high-energy, ultra-short pulse lasers, new possibilities arise. The task of this review is to discuss the principle differences between the ablation process of short (>1 ps) and ultra-short (<1 ps) pulses. Based on the timescales and the energy balance of the process that underlies an ablation event, it will be shown that ultra-short pulses are less thermal and cause less collateral damages than longer pulses. The confinement of the pulse energy to the focal region guarantees a better spatial resolution in all dimensions and improves the analytical figures of merit (e.g., fractionation). Applications that demonstrate these features and that will be presented are in-depth profiling of multi-layer samples and the elemental analysis of biological materials.

Application of Femtosecond Laser Ablation Time-of-Flight Mass Spectrometry to In-Depth Multilayer Analysis

A femtosecond laser system was used in combination with a time-of-flight mass spectrometer (TOF-MS) for in-depth profiling of semiconductor and metal samples. The semiconductor sample was a Co-implanted (10(17) ions/cm3) silicon wafer that had been carefully characterized by other established techniques. The total depth of the shallow implanted layer was 150 nm. As a second sample, a thin film metal standard had been used (NIST 2135c). This standard consisted of a silicon wafer with nine alternating Cr and Ni layers, each having a thickness of 56 and 57 nm, respectively. An orthogonal TOF-MS setup was implemented. This configuration was optimized until a sufficient mass resolution of 300 (m/delta m) and sensitivity was achieved. The experiments revealed that femtosecond-laser ablation TOF-MS is capable of resolving the depth profiles of these demanding samples. The poor precision of the measurements is discussed, and it is shown that this is due to pulse-to-pulse stability of the current laser system. Femtosecond-laser ablation TOF-MS is shown to be a promising technique for rapid in-depth profiling with a good lateral resolution of various multilayer thin film samples.