Transient response characteristic of memristor circuits and biological-like current spikes

Schottky barrier reduction on optoelectronic responses in heavy ion irradiated WSe2 memtransistors

Two-dimensional transition metal dichalcogenide-based memtransistors provide simulation, sensing, and storage capabilities for applications in a remotely operated aerospace environment. Swift heavy ion (SHI) irradiation technology is a common method to simulate the influences of radiation ions on electronic devices in space environments. Here, SHI irradiation technology under different conditions was utilized to produce complex defects in WSe2-based memtransistors. Low-resistance state to low-resistance state (LRS-LRS) switching behaviors under light illumination were achieved and photocurrent responses with different spike trains were observed in SHI-irradiated memtransistors, which facilitated the design of devices with enriched analog functions. Reduction of the Schottky barrier height due to the introduced defects at the metal/WSe2 interface was confirmed to be the major factor responsible for the observed behaviors. 1T phase and concentric circle-type vacancies were also created in the SHI-irradiated 2H-WSe2 channel besides the amorphous structure; these complex defects could seriously affect the transport properties of the devices. We believe that this work serves as a foundation for aerospace radiation applications of all-in-one devices. It also opens a new application field of heavy ion irradiation technology for the development of multiterminal memtransistor-based optoelectronic artificial synapses for neuromorphic computing.

Dynamic Analysis and FPGA Implementation of a New Fractional-Order Hopfield Neural Network System under Electromagnetic Radiation

Fractional calculus research indicates that, within the field of neural networks, fractional-order systems more accurately simulate the temporal memory effects present in the human brain. Therefore, it is worthwhile to conduct an in-depth investigation into the complex dynamics of fractional-order neural networks compared to integer-order models. In this paper, we propose a magnetically controlled, memristor-based, fractional-order chaotic system under electromagnetic radiation, utilizing the Hopfield neural network (HNN) model with four neurons as the foundation. The proposed system is solved by using the Adomain decomposition method (ADM). Then, through dynamic simulations of the internal parameters of the system, rich dynamic behaviors are found, such as chaos, quasiperiodicity, direction-controllable multi-scroll, and the emergence of analogous symmetric dynamic behaviors in the system as the radiation parameters are altered, with the order remaining constant. Finally, we implement the proposed new fractional-order HNN system on a field-programmable gate array (FPGA). The experimental results show the feasibility of the theoretical analysis.