Hybrid Density Functionals Applied to Complex Solid Catalysts: Successes, Limitations, and Prospects

First-principle calculations to investigate structural, electronic, mechanical, optical, and thermodynamic features of promising (La, In)-doped AlSb for optoelectronic applications

CONTEXT

A remarkable change in lattice parameters and bulk modulus is achieved by the suitable addition of Al (Al_1-x La_x Sb) and In (Al_1-x In_x Sb) atoms in the AlSb compound. Electronic responses like band structure, the total partial density of states, and the elemental density of states are thoroughly investigated. The computed values indicate that the binary compound AlSb is an indirect band gap and an optically inactive response. After increasing the doping concentrations (0.25, 0.5, 0.75) of La and In in AlSb, the band gap changes from indirect to direct nature. Hence, Al_1-0.75 La_0.25 Sb, Al_1-0.50 La_0.50 Sb, Al_1-0.75 In_0.25Sb, and Al_1-0.50 In_0.50Sb become optically active. The illustrious roles of Al-3p and In-4d states on the band gap and nonlinear responses of these compounds are extensively explored by the comparison between the computed results of ultra-soft and norm converging pseudopotentials. The excess specific heat (C_V), enthalpy of mixing (Hm), and phonon dispersion curves resulting from the concentrations "x" are estimated in order to investigate the thermodynamic stability responses of the pristine and doped AlSb. The obtained C_V and thermal coefficient statistics for Al_1-x La_x Sb and Al_1-x In_x Sb may be useful for a good mapping of experimental results and examining these compounds' enharmonic responses. There is a valuable change in optical characteristics like dielectric functional, absorption, conductivity, and refractive index due to the addition of (La, In) impurities in AlSb. It is further observed that Al_1-0.75 La_0.25 Sb, Al_1-0.50 La_0.50 Sb, Al_1-0.75 In_0.25Sb, and Al_1-0.50 In_0.50Sb are significantly mechanically stable compared to pristine AlSb. The above results suggest that Al_1-x La_x Sb and Al_1-x In_x Sb are high-performance optical materials and can be promising potential candidates for optoelectronic applications.

METHODS

The structural, electronic, mechanical, vibrational, and optical responses of the pure and doped Al_1-0.75 La_0.25 Sb, Al_1-0.50 La_0.50 Sb, Al_1-0.75 In_0.25Sb, and Al_1-0.50 In_0.50Sb are investigated, using Heydscuseria-Ernzerhof screened hybrid functional (HSEO6) and generalized gradient approximation (GGA) with norm-converging and ultra-soft pseudopotential techniques in the density functional theory.

Mixing properties of Al2O3(0001)-supportedM2O3andMM'O3monolayers (M,M' = Ti, V, Cr, Fe)

Considering the importance of sub-monolayer transition metal oxides supported on another oxide in many industrial processes, with the help of a DFT +Uapproach, we provide information on the structural and electronic properties of pureM₂O₃and mixedMM'O₃oxide monolayers (M,M' = Ti, V, Cr, Fe) supported on anα-Al₂O₃(0001) support. With their structure in the prolongation of the alumina corundum lattice, the monolayers have non-equivalent surface and interface cations, which leads to two different cation configurations in the mixed oxides. In all cases, the interfacial charge transfer is weak, but strong cation-cation electron redistributions may take place as in TiVO₃, TiFeO₃, VFeO₃, and TiCrO₃in which actual redox processes lead to cation oxidation states different from the expected +3 value. We show that the tendency to mixing relies on the interplay between two very different driving forces. Cation-cation redox reactions, in most cases, strongly stabilise mixed configurations, but preference for a given cation position in the monolayer, because of surface energy reasons, may strengthen, weaken or even block the mixing tendency. By comparison with results obtained in bulk ilmenite, in free-standing monolayers and in MLs deposited on transition metal substrates, we evidence the flexibility of their electronic structure as a function of size, dimensionality and nature of support, as a lever to tune their properties for specific applications.

Insight into the Na adsorption on WSe2xS2(1-x)monolayers: a hybrid functional investigation

Monolayer WSe2has aroused strong interest as a semiconducting 2D material. The tuning of its electronic properties is important for expanding the range of applications. In this work, by hybrid density functional theory calculations, we investigate the effect of Na adsorption on the electronic and magnetic properties of stoichiometric and defective WSe2monolayers and their WSe2xS2(1-x)alloys. Our results suggest that Na adsorption on defective WSe2xS2(1-x)monolayers would split and partially fill the empty defect states in the gap region inducing a local magnetic moment of 1μBper alkaline atom. The efficient tuning of the electronic and magnetic properties of WSe2monolayer by Na adsorption combined with the Se vacancy and S alloying would benefit its wide applications.

Quasi-degenerate states and their dynamics in oxygen deficient reducible metal oxides

The physical and chemical properties of oxides are defined by the presence of oxygen vacancies. Experimentally, non-defective structures are almost impossible to achieve due to synthetic constraints. Therefore, it is crucial to account for vacancies when evaluating the characteristics of these materials. The electronic structure of oxygen-depleted oxides deeply differs from that of the native forms, in particular, of reducible metal oxides, where excess electrons can localize in various distinct positions. In this perspective, we present recent developments from our group describing the complexity of these defective materials that highlight the need for an accurate description of (i) intrinsic vacancies in polar terminations, (ii) multiple geometries and complex electronic structures with several states attainable at typical working conditions, and (iii) the associated dynamics for both vacancy diffusion and the coexistence of more than one electronic structure. All these aspects widen our current understanding of defects in oxides and need to be adequately introduced in emerging high-throughput screening methodologies.

Influence of Spin State and Cation Distribution on Stability and Electronic Properties of Ternary Transition-Metal Oxides

This work is a systematic ab initio study of the influence of spin state and cation distribution on the stability, dielectric constant, electronic band gap, and density of states of ternary transition-metal oxides. As an example, the chemical family of spinel ferrites MFe₂O₄, with M = Mg, Sc-Zn is chosen. Dielectric constant and band gap are calculated for various spin states and cation configurations via dielectric-dependent self-consistent hybrid functionals and compared to available experimental data. When choosing the most stable spin state and cation configuration, the calculated electronic properties are in reasonable agreement with measured values. The nature of the excitation is investigated through projected density of states. A pronounced dependence of band gap energy and dielectric constant on the spin state and cation configuration is observed, which is a possible explanation for the large variation of the experimental results, in particular, if several states are energetically close.

Hybrid DFT investigation of the energetics of Mg ion diffusion in α-MoO3

Mg ion diffusion barriers in α-MoO₃ are simulated using the GGA, GGA+U, and hybrid DFT approaches.

Testing Exact Upper Bounds to Exact Exchange

The exact exchange energy and its energy density are useful but computationally expensive ingredients in density functional approximations for Kohn-Sham density functional theory. We present detailed tests of some exact nonempirical upper bounds to exact exchange. These "Rung 3.5" upper bounds contract the Kohn-Sham one-particle density matrix with model density matrices used to construct semilocal model exchange holes and invoke the Cauchy-Schwarz inequality. The contraction automatically eliminates the computationally expensive long-range component of the exact exchange hole. Numerical tests show that the exchange upper bounds underestimate total exchange energies while predicting other properties with accuracy approaching standard hybrid approximations.

Density Functional Theory Evaluated for Structural and Electronic Properties of 1T-Li x TiS2 and Lithium Ion Migration in 1T-Li0.94TiS2

In many applications it has been found that the standard generalized gradient approximation (GGA) does not accurately describe weak chemical bond and electronic properties of solids containing transition metals. In this work, we have considered the intercalation material 1T-Li x TiS2 (0≤x≤1) as a model system for the evaluation of the accuracy of GGA and corrected GGA with reference to the availabile experimental data. The influence of two different dispersion corrections (D3 and D-TS) and an on-site Coulomb repulsion term (GGA+U) on the calculated structural and electronic properties is tested. All calculations are based on the Perdew-Burke-Ernzerhof (PBE) functional. An effective U value of 3.5 eV is used for titanium. The deviation of the calculated lattice parameter c for TiS2 from experiment is reduced from 14 % with standard PBE to −2 % with PBE+U and Grimme’s D3 dispersion correction. 1T-TiS2 has a metallic ground state at PBE level whereas PBE+U predicts an indirect gap of 0.19 eV in agreement with experiment. The 7Li chemical shift and quadrupole coupling constants are in reasonable agreement with the experimental data only for PBE+U-D3. An activation energy of 0.4 eV is calculated with PBE+U-D3 for lithium migration via a tetrahedral interstitial site. This result is closer to experimental values than the migration barriers previously obtained at LDA level. The proposed method PBE+U-D3 gives a reasonable description of structural and electronic properties of 1T-Li x TiS2 in the whole range 0≤x≤1.

Synthesis and characterization of metastable transition metal oxides and oxide nitrides

New routes to vanadium sesquioxide and tantalum oxide nitride (γ- and δ-phase) are presented. Phase pure V2O3 with bixbyite-type structure, a metastable polymorph, was obtained from vanadium fluoride hydrates at ~750 K. It crystallizes in the cubic crystal system in space group I a 3 ¯ $Ia\bar 3$ with lattice parameter a=939.30(5) pm. The catalytical properties of the corresponding oxide nitride phases and their oxidation and reduction solid-state kinetics were investigated. The preparation of γ-TaON as a phase pure sample can be realized by ammonolysis of X-ray amorphous tantalum oxide precursors at 1073 K. This metastable tantalum oxide nitride crystallizes in the monoclinic VO2(B)-type structure in space group C2/m. The same precursors can be used to synthesize the δ-modification with an anatase-type structure at 1023 K. It crystallizes in the tetragonal crystal system in space group I41/amd. A maximum yield of 82 m % could be obtained. The fundamental band gaps of the synthesized and of other metastable TaON polymorphs were calculated from first principles using the GW method. The present results are compared to experimental data and to previous calculations at hybrid DFT level.