Analysis on discharge behavior and performance of As- and B-doped silicon anodes in non-aqueous Si–air batteries under pulsed discharge operation

Long-lifetime aqueous Si-air batteries prepared by growing multi-dimensionally tunable ZIF-8 crystals on Si anodes

Si-air batteries have a high energy density, high theoretical voltage, and long lifetime, but they present a low anode utilization rate in a potassium hydroxide electrolyte. In this work, a ZIF-8 protective layer was prepared and modulated by a secondary growth method and then applied to protect the Si flat and Si nanowire (NW) anodes of a Si-air battery. By adjusting the conversion ratio, particle size, and crystallinity of ZIF-8 on the Si surface, the contact mode of the Si anode with water and OH- was controlled, thus achieving long-term corrosion and passivation resistance. Si NWs@ZIF-8 exhibited the highest average discharge voltage of 1.16 V, and the Si flat@ZIF-8 anode achieved the longest discharge time of 420 h. This work confirms that ZIF-8 acts as an anode protective layer to improve the properties of Si-air batteries and also provides valuable insights into the protection of Si anodes by MOFs.

In/Ga-Doped Si as Anodes for Si-Air Batteries with Restrained Self-Corrosion and Surface Passivation: A First-Principles Study

Silicon-air batteries (SABs) are attracting considerable attention owing to their high theoretical energy density and superior security. In this study, In and Ga were doped into Si electrodes to optimize the capability of Si-air batteries. Varieties of Si-In/SiO₂ and Si-Ga/SiO₂ atomic interfaces were built, and their properties were analyzed using density functional theory (DFT). The adsorption energies of the SiO₂ passivation layer on In- and Ga-doped silicon electrodes were higher than those on pure Si electrodes. Mulliken population analysis revealed a change in the average number of charge transfers of oxygen atoms at the interface. Furthermore, the local device density of states (LDDOS) of the modified electrodes showed high strength in the interfacial region. Additionally, In and Ga as dopants introduced new energy levels in the Si/SiO₂ interface according to the projected local density of states (PLDOS), thus reducing the band gap of the SiO₂. Moreover, the I-V curves revealed that doping In and Ga into Si electrodes enhanced the current flow of interface devices. These findings provide a mechanistic explanation for improving the practical efficiency of silicon-air batteries through anode doping and provide insight into the design of Si-based anodes in air batteries.