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For: Bhuvaneswari S, Seetha M, Chandrasekaran J, Marnadu R. High Photoresponsive p-Si/n-In2O3 Junction Diodes with Low Ideality Factor Prepared Using Closely Packed Octahedral Structured In2O3 Thin Films. J Inorg Organomet Polym Mater 2020;30:4552-68. [DOI: 10.1007/s10904-020-01663-x] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Number Cited by Other Article(s)
1
A systematic influence of Cu doping on structural and opto-electrical properties of fabricated Yb2O3 thin films for Al/Cu-Yb2O3/p-Si Schottky diode applications. INORG CHEM COMMUN 2021. [DOI: 10.1016/j.inoche.2021.108646] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
2
An in-depth examination of opto-electrical properties of In-Yb2O3 thin films and fabricated Al/In-Yb2O3/p-Si (MIS) hetero junction diodes. APPLIED NANOSCIENCE 2021. [DOI: 10.1007/s13204-021-01817-4] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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