Neutron damage of hexagonal boron nitride: h-BN

Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride

Optically active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this Letter, we first demonstrate that the electron spin resonance frequencies of boron vacancy centers (V_{B}^{-}) can be detected optically in the limit of few-atomic-layer thick hBN flakes despite the nanoscale proximity of the crystal surface that often leads to a degradation of the stability of solid-state spin defects. We then analyze the variations of the electronic spin properties of V_{B}^{-} centers with the hBN thickness with a focus on (i) the zero-field splitting parameters, (ii) the optically induced spin polarization rate and (iii) the longitudinal spin relaxation time. This Letter provides important insights into the properties of V_{B}^{-} centers embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies.

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.

Cross-Linking-Filler Composite Materials of Functionalized Hexagonal Boron Nitride and Polyrotaxane Elastomer

This study demonstrates cross-linking-filler composites in which covalent bonds between the fillers and polymer chains act as the main cross-linking points for the development of flexible and thermally conductive materials. Cross-linking-filler composites are fabricated using functionalized hexagonal boron nitride (hBN) fillers and polyrotaxane, called slide-ring polymers. The hBN particles modified with a carbon layer were produced by plasma processing in hydroquinone aqueous solution and functionalized with isocyanate groups. As the functionalized hBN provides cross-linking points for polyrotaxane, the cross-linking-filler composites can reduce cross-linking agents among polyrotaxane and exhibit considerable flexibility. Young's moduli of the cross-linking-filler composites are much lower than those of previously reported polyrotaxane composites while retaining their toughness. These values are relatively close to those of unfilled polyrotaxane elastomers, despite containing hBN fillers with a content of 50 wt %. Thus, the cross-linking-filler composites exhibit a combination of flexibility and thermal conductivity, which few hBN/elastomer composites have achieved.

Decoherence of V[Formula: see text] spin defects in monoisotopic hexagonal boron nitride

Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either 10B or 11B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first confirm that it corresponds to the negatively charged boron-vacancy center ([Formula: see text]). We then show that its spin coherence properties are slightly improved in 10B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using cross-relaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of [Formula: see text] spin defects, which are valuable for the future development of hBN-based quantum sensing foils.

Single-spin resonance in a van der Waals embedded paramagnetic defect

A plethora of single-photon emitters have been identified in the atomic layers of two-dimensional van der Waals materials^1-8. Here, we report on a set of isolated optical emitters embedded in hexagonal boron nitride that exhibit optically detected magnetic resonance. The defect spins show an isotropic g_e-factor of ~2 and zero-field splitting below 10 MHz. The photokinetics of one type of defect is compatible with ground-state electron-spin paramagnetism. The narrow and inhomogeneously broadened magnetic resonance spectrum differs significantly from the known spectra of in-plane defects. We determined a hyperfine coupling of ~10 MHz. Its angular dependence indicates an unpaired, out-of-plane delocalized π-orbital electron, probably originating from substitutional impurity atoms. We extracted spin-lattice relaxation times T₁ of 13-17 μs with estimated spin coherence times T₂ of less than 1 μs. Our results provide further insight into the structure, composition and dynamics of single optically active spin defects in hexagonal boron nitride.

Plasma Tuning Local Environment of Hexagonal Boron Nitride for Oxidative Dehydrogenation of Propane

Hexagonal boron nitride (h-BN) has lately received great attention in the oxidative dehydrogenation (ODH) reaction of propane to propylene for its extraordinary olefin selectivity in contrast to metal oxides. However, high crystallinity of commercial h-BN and elusive cognition of active sites hindered the enhancement of utilization efficiency. Herein, four kinds of plasmas (N₂ , O₂ , H₂ , Ar) were accordingly employed to regulate the local chemical environment of h-BN. N₂ -treated BN exhibited a remarkable activity, i.e., 26.0 % propane conversion with 89.4 % selectivity toward olefins at 520 °C. Spectroscopy demonstrated that "three-boron center" N-defects in the catalyst played a pivotal role in facilitating the conversion of propane. While the sintering effect of the "BO_x " species in O₂ -treated BN, led to the suppressed catalytic performance (12.4 % conversion at 520 °C).