Adachi Y, Nomura T, Tazuhara S, Naito H, Ohshita J. Thiophene-based twisted bistricyclic aromatic ene with tricoordinate boron: a new n-type semiconductor.
Chem Commun (Camb) 2021;
57:1316-1319. [PMID:
33471001 DOI:
10.1039/d0cc07952a]
[Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The incorporation of tricoordinate boron into conjugated systems is of current interest in the field of organic electronics. In this study, a tricoordinate boron-embedded thiophene-based bistricyclic aromatic ene (BAE) was synthesized as a new boron-containing conjugated system. The combination of tricoordinate boron and fused thiophene rings imposed the twisted conformation in the BAE structure, resulting in the narrow energy absorption with the low-lying LUMO. Preliminary studies on the application of the highly electron-deficient boron-embedded BAE to organic field-effect transistors (OFETs) were also performed, revealing its moderately high electron mobility.
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