Heterogeneous Oxygen-Containing Species Formed via Oxygen or Water Dissociative Adsorption onto a Gallium Phosphide Surface

Wet Chemical Synthesis of Ultrathin γ-Ga2O3 Quantum Wires Enabling Far-UVC Photodetection with Ultrahigh Selectivity and Sensitivity

As compared to solar-blind ultraviolet (UV) photodetectors (PDs), far-UVC PDs not only show some irreplaceable advantages but also are more challenging to be developed. To solve this challenge, we report herein a soft template-assisted solvothermal route to synthesize ultrathin γ-Ga2O3 quantum wires (UQWs) with diameters down to 1-2 nm. These UQWs all exhibit a cluster-like absorption feature with a strong peak located between 190 and 230 nm and an edge below 250 nm, allowing highly selective absorption to far-UVC light. Notably, their normalized absorption coefficients were experimentally and theoretically confirmed to increase obviously with decreasing their diameters. Self-powered photoelectrochemical-type PDs based on Ga2O3 QWs of 1.7 nm diameter were therefore fabricated, exhibiting an excellent far-UVC detection performance with an unprecedented ultrahigh spectral selectivity (R210 nm/R250 nm = 452). As a proof of concept, this paper offers a new idea for developing ultrawide bandgap semiconductor materials and devices by leveraging a strong quantum confinement effect.

Comprehensively Improved Performance of β-Ga2O3 Solar-Blind Photodetector Enabled by a Homojunction with Unique Passivation Mechanisms

Ga₂O₃-based solar-blind photodetectors have been extensively investigated for a wide range of applications. However, to date, a lot of research has focused on optimizing the epitaxial technique or constructing a heterojunction, and studies concerning surface passivation, a key technique in electronic and optoelectronic devices, are severely lacking. Here, we report an ultrasensitive metal-semiconductor-metal photodetector employing a β-Ga₂O₃ homojunction structure realized by low-energy surface fluorine plasma treatment, in which an ultrathin fluorine-doped layer served for surface passivation. Without inserting/capping a foreign layer, this strategy utilized fluorine dopants to both passivate local oxygen vacancies and suppress surface chemisorption. The dual effects have opposite impacts on device current magnitude (by suppressing metal/semiconductor junction leakage and inhibiting surface-chemisorption-induced carrier consumption) but dominate in dark and under illumination, respectively. By means of such unique mechanisms, the simultaneous improvement on dark and photo current characteristics was achieved, leading to the sensitivity enhanced by nearly 1 order of magnitude. Accordingly, the 15 min treated sample exhibited striking competitiveness in terms of comprehensive properties, including a dark current as low as 6 pA, a responsivity of 18.43 A/W, an external quantum efficiency approaching 1 × 10⁴%, a specific detectivity of 2.48 × 10¹⁴ Jones, and a solar-blind/UV rejection ratio close to 1 × 10⁵. Furthermore, the response speed was effectively accelerated because of the reduction on metal/semiconductor interface trap states. Our findings provide a facile, economical, and contamination-free surface passivation technique, which unlocks the potential for comprehensively improving the performance of β-Ga₂O₃ solar-blind metal-semiconductor-metal photodetectors.

In Situ Analytical Techniques for the Investigation of Material Stability and Interface Dynamics in Electrocatalytic and Photoelectrochemical Applications

Electrocatalysis and photoelectrochemistry are critical to technologies like fuel cells, electrolysis, and solar fuels. Material stability and interfacial phenomena are central to the performance and long-term viability of these technologies. Researchers need tools to uncover the fundamental processes occurring at the electrode/electrolyte interface. Numerous analytical instruments are well-developed for material characterization, but many are ex situ techniques often performed under vacuum and without applied bias. Such measurements miss dynamic phenomena in the electrolyte under operational conditions. However, innovative advancements have allowed modification of these techniques for in situ characterization in liquid environments at electrochemically relevant conditions. This review explains some of the main in situ electrochemical characterization techniques, briefly explaining the principle of operation and highlighting key work in applying the method to investigate material stability and interfacial properties for electrocatalysts and photoelectrodes. Covered methods include spectroscopy (in situ UV-vis, ambient pressure X-ray photoelectron spectroscopy (APXPS), and in situ Raman), mass spectrometry (on-line inductively coupled plasma mass spectrometry (ICP-MS) and differential electrochemical mass spectrometry (DEMS)), and microscopy (in situ transmission electron microscopy (TEM), electrochemical atomic force microscopy (EC-AFM), electrochemical scanning tunneling microscopy (EC-STM), and scanning electrochemical microscopy (SECM)). Each technique's capabilities and advantages/disadvantages are discussed and summarized for comparison.

Oxidation State of GaP Photoelectrode Surfaces under Electrochemical Conditions for Photocatalytic CO2 Reduction

Illuminated GaP electrodes selectively reduce CO₂ to CH₃OH in aqueous solution. To understand the photoelectrocatalytic mechanism, knowledge of the GaP surface atomic structure in contact with water under relevant electrochemical conditions is essential. However, there remains a debate about the oxidation state of GaP, i.e., whether oxide species are present at the surface. To address this issue, we use density functional theory to investigate the adsorption of oxide species on GaP(110), a stable and active facet for CO₂ reduction. We predict that GaP(110) indeed could be oxidized at the standard reduction potential for CO₂ to CH₃OH. However, we find that unoxidized GaP(110) is stable under illumination, as it corresponds to a highly reducing condition induced by photoexcited electrons. We conclude that an oxidized GaP electrode is very likely unstable thermodynamically under photoelectrochemical conditions for CO₂ reduction, and therefore, the relevant GaP/water interface for catalysis is indeed the unoxidized one.

Investigation of Water Dissociation and Surface Hydroxyl Stability on Pure and Ni-Modified CoOOH by Ambient Pressure Photoelectron Spectroscopy

Water adsorption and reaction on pure and Ni-modified CoOOH nanowires were investigated using ambient pressure photoemission spectroscopy (APPES). The unique capabilities of APPES enable us to observe water dissociation and monitor formation of surface species on pure and Ni-modified CoOOH under elevated pressures and temperatures for the first time. Over a large range of pressures (UHV to 1 Torr), water dissociates readily on the pure and Ni-modified CoOOH surfaces at 27 °C. With an increase in H₂O pressure, a greater degree of surface hydroxylation was observed for all samples. At 1 Torr H₂O, ratios of different oxygen species indicate a transformation of CoOOH to CoO_xH_y in pure and Ni-modified CoOOH. In temperature dependent studies, desorption of weakly bound water and surface dehydroxylation were observed with increasing temperature. Larger percentages of surface hydroxyl groups at higher temperatures were observed on Ni-modified CoOOH compared to pure CoOOH, which indicates an increased stability of surface hydroxyl groups on these Ni-modified surfaces.

Electronic and chemical structure of the H2O/GaN(0001) interface under ambient conditions

We employed ambient pressure X-ray photoelectron spectroscopy to investigate the electronic and chemical properties of the H2O/GaN(0001) interface under elevated pressures and/or temperatures. A pristine GaN(0001) surface exhibited upward band bending, which was partially flattened when exposed to H2O at room temperature. However, the GaN surface work function was slightly reduced due to the adsorption of molecular H2O and its dissociation products. At elevated temperatures, a negative charge generated on the surface by a vigorous H2O/GaN interfacial chemistry induced an increase in both the surface work function and upward band bending. We tracked the dissociative adsorption of H2O onto the GaN(0001) surface by recording the core-level photoemission spectra and obtained the electronic and chemical properties at the H2O/GaN interface under operando conditions. Our results suggest a strong correlation between the electronic and chemical properties of the material surface, and we expect that their evolutions lead to significantly different properties at the electrolyte/electrode interface in a photoelectrochemical solar cell.