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Xu H, Han L, Huang J, Du B, Zhan D. Scanning Electrochemical Probe Lithography for Ultra-Precision Machining of Micro-Optical Elements with Freeform Curved Surface. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402743. [PMID: 38940401 DOI: 10.1002/smll.202402743] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2024] [Revised: 06/13/2024] [Indexed: 06/29/2024]
Abstract
Two challenges should be overcome for the ultra-precision machining of micro-optical element with freeform curved surface: one is the intricate geometry, the other is the hard-to-machining optical materials due to their hardness, brittleness or flexibility. Here scanning electrochemical probe lithography (SECPL) is developed, not only to meet the machining need of intricate geometry by 3D direct writing, but also to overcome the above mentioned mechanical properties by an electrochemical material removal mode. Through the electrochemical probe a localized anodic voltage is applied to drive the localized corrosion of GaAs. The material removal rate is obtained as a function of applied voltage, motion rate, scan segment, etc. Based on the material removal function, an arbitrary geometry can be converted to a spatially distributed voltage. Thus, a series of micro-optical element are fabricated with a machining accuracy in the scale of 100 s of nanometers. Notably, the spiral phase plate shows an excellent performance to transfer parallel light to vortex beam. SECPL demonstrates its excellent controllability and accuracy for the ultra-precision machining of micro-optical devices with freeform curved surface, providing an alternative chemical approach besides the physical and mechanical techniques.
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Affiliation(s)
- Hantao Xu
- Department of Mechanical and Electrical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Fujian Science & Technology Innovation Laboratory for Energy Materials of China, Engineering Research Center of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Lianhuan Han
- Department of Mechanical and Electrical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Fujian Science & Technology Innovation Laboratory for Energy Materials of China, Engineering Research Center of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Jianan Huang
- Department of Mechanical and Electrical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Fujian Science & Technology Innovation Laboratory for Energy Materials of China, Engineering Research Center of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Bingqian Du
- Department of Mechanical and Electrical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Fujian Science & Technology Innovation Laboratory for Energy Materials of China, Engineering Research Center of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Dongping Zhan
- Department of Mechanical and Electrical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, State Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Fujian Science & Technology Innovation Laboratory for Energy Materials of China, Engineering Research Center of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
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Znati S, Wharwood J, Tezanos KG, Li X, Mohseni PK. Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors. NANOSCALE 2024; 16:10901-10946. [PMID: 38804075 DOI: 10.1039/d4nr00857j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for fabricating a variety of semiconductor nanostructures. Since early investigations in 2000, research in this field has provided a deeper understanding of the underlying mechanisms of catalytic etching processes and enabled high control over etching conditions for diverse applications. In this Review, we present an overview of recent developments in the application of MacEtch to nanomanufacturing and processing of III-V based semiconductor materials and other materials beyond Si. We highlight the key findings and developments in MacEtch as applied to GaAs, GaN, InP, GaP, InGaAs, AlGaAs, InGaN, InGaP, SiC, β-Ga2O3, and Ge material systems. We further review a series of active and passive devices enabled by MacEtch, including light-emitting diodes (LEDs), field-effect transistors (FETs), optical gratings, sensors, capacitors, photodiodes, and solar cells. By reviewing demonstrated control of morphology, optimization of etch conditions, and catalyst-material combinations, we aim to distill the current understanding of beyond-Si MacEtch mechanisms and to provide a bank of reference recipes to stimulate progress in the field.
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Affiliation(s)
- Sami Znati
- Microsystem Engineering, Rochester Institute of Technology, Rochester, NY 16423, USA.
- NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, NY 14623, USA
| | - Juwon Wharwood
- NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, NY 14623, USA
- Department of Electrical and Computer Engineering, Howard University, Washington, DC 20059, USA
| | - Kyle G Tezanos
- NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, NY 14623, USA
- School of Materials Science and Chemistry, Rochester Institute of Technology, Rochester, NY 14623, USA
| | - Xiuling Li
- Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA
| | - Parsian K Mohseni
- Microsystem Engineering, Rochester Institute of Technology, Rochester, NY 16423, USA.
- NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, NY 14623, USA
- School of Materials Science and Chemistry, Rochester Institute of Technology, Rochester, NY 14623, USA
- Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623, USA
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Liu B, Han L, Xu H, Su JJ, Zhan D. Ultrasonic-Assisted Electrochemical Nanoimprint Lithography: Forcing Mass Transfer to Enhance the Localized Etching Rate of GaAs. Chem Asian J 2023; 18:e202300491. [PMID: 37493590 DOI: 10.1002/asia.202300491] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Revised: 07/25/2023] [Accepted: 07/25/2023] [Indexed: 07/27/2023]
Abstract
Electrochemical nanoimprint lithography (ECNL) has emerged as a promising technique for fabricating three-dimensional micro/nano-structures (3D-MNSs) directly on semiconductor wafers. This technique is based on a localized corrosion reaction induced by the contact potential across the metal/semiconductor boundaries. The anodic etching of semiconductor and the cathodic reduction of electron acceptors occur at the metal/semiconductor/electrolyte interface and the Pt mold surface, respectively. However, the etching rate is limited by the mass transfer of species in the ultrathin electrolyte layer between the mold and the workpiece. To overcome this challenge, we introduce the ultrasonics effect into the ECNL process to facilitate the mass exchange between the ultrathin electrolyte layer and the bulk solution, thereby improving the imprinting efficiency. Experimental investigations demonstrate a positive linear relationship between the reciprocal of the area duty ratio of the mold and the imprinting efficiency. Furthermore, the introduction of ultrasonics improves the imprinting efficiency by approximately 80 %, irrespective of the area duty ratio. The enhanced imprinting efficiency enables the fabrication of 3D-MNSs with higher aspect ratios, resulting in a stronger light trapping effect. These results indicate the prospective applications of ECNL in semiconductor functional devices, such as photoelectric detection and photovoltaics.
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Affiliation(s)
- Bing Liu
- Department of Mechanical and Electrical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, Fujian, China
| | - Lianhuan Han
- Department of Mechanical and Electrical Engineering, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, Fujian, China
| | - Hantao Xu
- Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Engineering Research Center of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Jian-Jia Su
- Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Engineering Research Center of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Dongping Zhan
- Key Laboratory of Physical Chemistry of Solid Surfaces (PCOSS), Engineering Research Center of Electrochemical Technologies of Ministry of Education, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
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Micromachining of Predesigned Perpendicular Copper Micropillar Array by Scanning Electrochemical Microscopy. Electrochim Acta 2023. [DOI: 10.1016/j.electacta.2023.141913] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
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Sharstniou A, Niauzorau S, Hardison AL, Puckett M, Krueger N, Ryckman JD, Azeredo B. Roughness Suppression in Electrochemical Nanoimprinting of Si for Applications in Silicon Photonics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206608. [PMID: 36075876 DOI: 10.1002/adma.202206608] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Revised: 08/29/2022] [Indexed: 06/15/2023]
Abstract
Metal-assisted electrochemical nanoimprinting (Mac-Imprint) scales the fabrication of micro- and nanoscale 3D freeform geometries in silicon and holds the promise to enable novel chip-scale optics operating at the near-infrared spectrum. However, Mac-Imprint of silicon concomitantly generates mesoscale roughness (e.g., protrusion size ≈45 nm) creating prohibitive levels of light scattering. This arises from the requirement to coat stamps with nanoporous gold catalyst that, while sustaining etchant diffusion, imprints its pores (e.g., average diameter ≈42 nm) onto silicon. In this work, roughness is reduced to sub-10 nm levels, which is in par with plasma etching, by decreasing pore size of the catalyst via dealloying in far-from equilibrium conditions. At this level, single-digit nanometric details such as grain-boundary grooves of the catalyst are imprinted and attributed to the resolution limit of Mac-Imprint, which is argued to be twice the Debye length (i.e., 1.7 nm)-a finding that broadly applies to metal-assisted chemical etching. Last, Mac-Imprint is employed to produce single-mode rib-waveguides on pre-patterned silicon-on-insulator wafers with root-mean-square line-edge roughness less than 10 nm while providing depth uniformity (i.e., 42.9 ± 5.5 nm), and limited levels of silicon defect formation (e.g., Raman peak shift < 0.1 cm-1 ) and sidewall scattering.
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Affiliation(s)
- Aliaksandr Sharstniou
- Arizona State University, School of Manufacturing Systems and Networks, 6075 S. Innovation Way West, Mesa, AZ, 85212, USA
| | - Stanislau Niauzorau
- Arizona State University, School of Manufacturing Systems and Networks, 6075 S. Innovation Way West, Mesa, AZ, 85212, USA
| | - Anna L Hardison
- Clemson University, Holcombe Department of Electrical and Computer Engineering, 91 Technology Drive, Anderson, SC, 29625, USA
| | - Matthew Puckett
- Honeywell International, Aerospace Advanced Technology Advanced Sensors & Microsystems, 21111 N. 19th Avenue, Phoenix, AZ, 85027, USA
| | - Neil Krueger
- Honeywell International, Aerospace Advanced Technology Advanced Sensors & Microsystems, 12001 State Highway 55, Plymouth, MN, 55441, USA
| | - Judson D Ryckman
- Clemson University, Holcombe Department of Electrical and Computer Engineering, 91 Technology Drive, Anderson, SC, 29625, USA
| | - Bruno Azeredo
- Arizona State University, School of Manufacturing Systems and Networks, 6075 S. Innovation Way West, Mesa, AZ, 85212, USA
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