In situ carrier tuning in high temperature superconductor Bi2Sr2CaCu2O8+ by potassium deposition

Unveiling phase diagram of the lightly doped high-Tc cuprate superconductors with disorder removed

The currently established electronic phase diagram of cuprates is based on a study of single- and double-layered compounds. These CuO₂ planes, however, are directly contacted with dopant layers, thus inevitably disordered with an inhomogeneous electronic state. Here, we solve this issue by investigating a 6-layered Ba₂Ca₅Cu₆O₁₂(F,O)₂ with inner CuO₂ layers, which are clean with the extremely low disorder, by angle-resolved photoemission spectroscopy (ARPES) and quantum oscillation measurements. We find a tiny Fermi pocket with a doping level less than 1% to exhibit well-defined quasiparticle peaks which surprisingly lack the polaronic feature. This provides the first evidence that the slightest amount of carriers is enough to turn a Mott insulating state into a metallic state with long-lived quasiparticles. By tuning hole carriers, we also find an unexpected phase transition from the superconducting to metallic states at 4%. Our results are distinct from the nodal liquid state with polaronic features proposed as an anomaly of the heavily underdoped cuprates.

Unveiling the Degradation Mechanism of High-Temperature Superconductor Bi2Sr2CaCu2O8+δ in Water-Bearing Environments

The physical properties of copper oxide high-temperature superconductors have been studied extensively, such as the band structure and doping effects of Bi₂Sr₂CaCu₂O_8+δ (Bi-2212). However, some chemical-related properties of these superconductors are rarely reported, such as their stability in water-bearing environments. Herein, we report experiments combined with ab initio calculations that address the effects of water in contact with Bi-2212. The evolution of Bi-2212 flakes with exposure to water for different time intervals was tested and characterized by optical microscopy (OM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), and electrical measurements. The thickness of Bi-2212 flakes is gradually decreased in water, and some thin flakes can be completely etched away after a few days. The stability of Bi-2212 in other solvents is also evaluated, including alcohol, acetone, HCl, and KOH. The morphology of Bi-2212 flakes is relatively stable in organic solvents. However, the flakes are etched relatively quick in HCl and KOH, especially in an acidic environment. Our results imply that hydrogen ions are primarily responsible for the deterioration of their properties. Both TEM and calculation results demonstrate that the atoms in the Bi-O plane are relatively stable when compared to the inner atoms in Sr-O, Ca-O, and Cu-O planes. This work contributes toward understanding the chemical stability of a Bi-2212 superconducting device in environmental medium, which is important for both fundamental studies and practical applications of copper oxide high-temperature superconductors.

Momentum-resolved visualization of electronic evolution in doping a Mott insulator

High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to the spectral weight transfer from the charge transfer band to the gapped region and the induced low-energy states emerge in a wide energy range inside the Mott gap. These results provide key information on the electronic evolution in doping a Mott insulator and establish a basis for developing microscopic theories for cuprate superconductivity.

How a Mott insulating state evolves into a conducting or superconducting state is a central issue in doping a Mott insulator and important to understand the physics in high temperature cuprate superconductors. Here, the authors visualize the electronic structure evolution of a Mott insulator within the full Mott gap region and address the fundamental issues.

Phase diagram of Bi2Sr2CaCu2O8+δ revisited

In cuprate superconductors, the doping of carriers into the parent Mott insulator induces superconductivity and various other phases whose characteristic temperatures are typically plotted versus the doping level p. In most materials, p cannot be determined from the chemical composition, but it is derived from the superconducting transition temperature, Tc, using the assumption that the Tc dependence on doping is universal. Here, we present angle-resolved photoemission studies of Bi2Sr2CaCu2O8+δ, cleaved and annealed in vacuum or in ozone to reduce or increase the doping from the initial value corresponding to Tc = 91 K. We show that p can be determined from the underlying Fermi surfaces and that in-situ annealing allows mapping of a wide doping regime, covering the superconducting dome and the non-superconducting phase on the overdoped side. Our results show a surprisingly smooth dependence of the inferred Fermi surface with doping. In the highly overdoped regime, the superconducting gap approaches the value of 2Δ0 = (4 ± 1)kBTc.