Selective Growth of Vertical-aligned ZnO Nanorod Arrays on Si Substrate by Catalyst-free Thermal Evaporation

Controllable synthesis of ZnO nanostructures on the Si substrate by a hydrothermal route

In this paper, controllable synthesis of various ZnO nanostructures was achieved via a simple and cost-effective hydrothermal process on the Si substrate. The morphology evolution of the ZnO nanostructures was well monitored by tuning hydrothermal growth parameters, such as the seed layer, solution concentration, reaction temperature, and surfactant. X-ray diffraction and photoluminescence measurements reveal that crystal quality and optical properties crucially depend on the morphology of the ZnO nanostructures. The ease of synthesis and convenience to tune morphology and optical properties bring this approach great potential for nanoscale applications.

Selective homoepitaxial growth and luminescent properties of ZnO nanopillars

High spatial density ZnO nanopillars (NPs) have been fabricated on catalyst- and pattern-free Si wafers using atmospheric pressure metal organic chemical vapor deposition (APMOCVD) at a moderate temperature (500 °C). The nanopillar diameter is ∼ 35 nm and the length is ∼ 150 nm, with a density of ∼ 2 × 10(9) cm( - 2). The growth evolution of the nanopillars, providing the (0001)(NP) ∐ (0001)(ZNO grain) ∐ (100)(Si surface) epitaxial relationship, is extensively studied by scanning and high resolution transmission microscopy. The approach to obtaining the ZnO 1D structures is explained in terms of selective homoepitaxial growth via the crystallographic anisotropy of the seeding layer. The advanced PL properties of ZnO NPs, e.g. indications of free excitonic and absence of defect emission, are related to their single crystalline nature within one pillar and most probably better stoichiometry and less contamination. The observed efficient monochromatic UV emission from the ZnO NPs at room temperature points toward their potential application as building blocks for nanoscale optoelectronic devices.

The Modulation of Optical Property and its Correlation with Microstructures of ZnO Nanowires

ZnO nanowires with both good crystallinity and oxygen vacancies defects were synthesized by thermal oxidation of Zn substrate pretreated in concentrated sulfuric acid under the air atmosphere, Ar- and air-mixed gas stream. The photoluminescence spectra reveal that only near-band-edge (NBE) emission peak was observed for the sample grown in the air atmosphere; the broad blue-green and the red-shifted NBE emission peaks were observed for the sample grown in the mixed gas stream, indicating that the sample grown in the mixed gas stream has a defective structure and its optical properties can be modulated by controlling its structure. The high-resolution transmission electron microscope and the corresponding structural simulation confirm that the oxygen vacancies exist in the crystal of the nanowires grown in the mixed gas stream. The ZnO nanowires with oxygen vacancies defects exhibit better photocatalytic activity than the nanowires with good crystallinity. The photocatalytic process obeys the rules of first-order kinetic reaction, and the rate constants were calculated.

Effects of Growth Conditions on Structural Properties of ZnO Nanostructures on Sapphire Substrate by Metal-Organic Chemical Vapor Deposition

ZnO was grown on sapphire substrate by metal-organic chemical vapor deposition using the diethylzinc (DEZn) and oxygen (O(2)) as source chemicals at 500 degrees C. Influences of the chamber pressure and O(2)/DEZn ratio on the ZnO structural properties were discussed. It was found that the chamber pressure has significant effects on the morphology of ZnO and could result in various structures of ZnO including pyramid-like, worm-like, and columnar grain. When the chamber pressure was kept at 10 Torr, the lowest full width at half-maximum of ZnO (002) of 175 arc second can be obtained. On the other hand, by lowering the DEZn flow rate, the crystal quality of ZnO can be improved. Under high DEZn flow rate, the ZnO nanowall-network structures were found to grow vertically on the sapphire substrate without using any metal catalysts. It suggests that higher DEZn flow rate promotes three-dimensional growth mode resulting in increased surface roughness. Therefore, some tip on the ZnO surface could act as nucleation site. In this work, the growth process of our ZnO nanowall networks is said to follow the self-catalyzed growth mechanism under high-DEZn flow rate.