Structural Modification in Carbon Nanotubes by Boron Incorporation

A Flexible and Boron-Doped Carbon Nanotube Film for High-Performance Li Storage

Boron-doped carbon nanotubes are a promising candidate for Li storage due to the unique electronic structure and high crystallinity brought by the boron dopants. However, the relatively low Li storage capacity has limited its application in the electrochemical energy storage field, which is mainly caused by the predominantly intact graphitic structure on their surface with limited access points for Li ion entering. Herein, we report a novel B-doped CNTs (py-B-CNTs) film, in which the CNTs possess intrinsically rough surface but flat internal graphitic structure. When used as a flexible anode material for LIBs, this py-B-CNTs film delivers significantly enhanced capacity than the conventional B-doped CNTs or the pristine CNTs films, with good rate capability and excellent cycling performance as well. Moreover, this flexible film also possesses excellent mechanical flexibility, making it capable of being used in a prototype flexible LIB with stable power output upon various bending states.

Effect of N/B doping on the electronic and field emission properties for carbon nanotubes, carbon nanocones, and graphene nanoribbons

Carbon nanotubes, carbon nanocones, and graphene nanoribbons are carbon-based nanomaterials, and their electronic and field emission properties can be altered by either electron donors or electron acceptors. Among both donors and accepters, nitrogen and boron atoms are typical substitutional dopants for carbon materials. The contribution of this paper mainly provides a comprehensive overview of the theoretical topics. The effect of nitrogen/boron doping on the electronic and field emission properties for carbon nanotubes, carbon nanocones, and graphene nanoribbons is reviewed. It is also suggested that nitrogen is more an n-type donor. The discussion about the mechanism of field emission for N-doped carbon nanotubes and electronic structures of N-doped graphene nanoribbons is interesting and timely.

On the growth and microstructure of carbon nanotubes grown by thermal chemical vapor deposition

Carbon nanotubes (CNTs) were deposited on various substrates namely untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical vapor deposition technique. The optimum parameters for the growth and the microstructure of the synthesized CNTs on these substrates are described. The results show that the growth of CNTs is strongly influenced by the substrate used. Vertically aligned multi-walled CNTs were found on quartz, Fe-deposited silicon and quartz, untreated silicon, and on silicon nitride-deposited silicon substrates. On the other hand, spaghetti-type growth was observed on stainless steel mesh, and no CNT growth was observed on HF-treated silicon and copper. Silicon nitride-deposited silicon substrate proved to be a promising substrate for long vertically aligned CNTs of length 110-130 μm. We present a possible growth mechanism for vertically aligned and spaghetti-type growth of CNTs based on these results.