1
|
Geng B, Shi Z, Chen C, Zhang W, Yang L, Deng C, Yang X, Miao L, Peng C. Enable a Facile Size Re-distribution of MBE-Grown Ga-Droplets via In Situ Pulsed Laser Shooting. NANOSCALE RESEARCH LETTERS 2021; 16:126. [PMID: 34347177 PMCID: PMC8339181 DOI: 10.1186/s11671-021-03583-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2020] [Accepted: 07/28/2021] [Indexed: 06/13/2023]
Abstract
A MBE-prepared Gallium (Ga)-droplet surface on GaAs (001) substrate is in situ irradiated by a single shot of UV pulsed laser. It demonstrates that laser shooting can facilely re-adjust the size of Ga-droplet and a special Ga-droplet of extremely broad size-distribution with width from 16 to 230 nm and height from 1 to 42 nm are successfully obtained. Due to the energetic inhomogeneity across the laser spot, the modification of droplet as a function of irradiation intensity (IRIT) can be straightly investigated on one sample and the correlated mechanisms are clarified. Systematically, the laser resizing can be perceived as: for low irradiation level, laser heating only expands droplets to make mergences among them, so in this stage, the droplet size distribution is solely shifted to the large side; for high irradiation level, laser irradiation not only causes thermal expansion but also thermal evaporation of Ga atom which makes the size-shift move to both sides. All of these size-shifts on Ga-droplets can be strongly controlled by applying different laser IRIT that enables a more designable droplet epitaxy in the future.
Collapse
Affiliation(s)
- Biao Geng
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Zhenwu Shi
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China.
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China.
| | - Chen Chen
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Wei Zhang
- AVIC Huadong Photo-electronics Co., Ltd, Wuhu, 241002, China
| | - Linyun Yang
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Changwei Deng
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Xinning Yang
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Lili Miao
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China
| | - Changsi Peng
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, China.
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province and Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, 215006, China.
- Institute of Research for Applicable Computing, University of Bedfordshire, Park Square, Luton, LU1 3JU, UK.
| |
Collapse
|
2
|
Huang X, Zhong H, Yang J, Liu L, Liu J, Yu Y, Yu S. Morphological engineering of aluminum droplet etched nanoholes for symmetric GaAs quantum dot epitaxy. NANOTECHNOLOGY 2020; 31:495701. [PMID: 32990269 DOI: 10.1088/1361-6528/abb1e9] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Symmetric droplet-etched quantum dots (QDs) are the leading candidate for generating high-performance polarization-entangled photon pairs. One of the challenges is how to precisely engineer the properties of QDs by controlling the morphology of etched nanoholes. In this paper, we systematically investigate the influence of the underlying material, showing the morphological evolution of the nanohole structure as well as symmetric GaAs QDs with an average fine-structure splitting (FSS) of (5.9 ± 1.2) μeV. Moreover, we develop a theoretical model that quantitatively reproduces the experimental data and provides insights into the mechanisms governing the relationship between the anisotropy of nanoholes in the [Formula: see text] crystallographic direction and the growth parameters. Our theoretical analysis also indicates how to improve the symmetry of nanoholes to meet the requirements for implementing QDs in entangled photon sources.
Collapse
Affiliation(s)
- Xiaoying Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Hancheng Zhong
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Jiawei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Lin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
| | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
- Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, People's Republic of China
| | - Siyuan Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
- Photonics Group, Merchant Venturers School of Engineering, University of Bristol, Bristol BS8 1UB, United Kingdom
| |
Collapse
|
3
|
High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots. Sci Rep 2020; 10:6532. [PMID: 32300114 PMCID: PMC7162903 DOI: 10.1038/s41598-020-62248-9] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2019] [Accepted: 01/02/2020] [Indexed: 11/08/2022] Open
Abstract
We introduce a high-temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self-assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modeled.
Collapse
|
4
|
Vichi S, Bietti S, Khalili A, Costanzo M, Cappelluti F, Esposito L, Somaschini C, Fedorov A, Tsukamoto S, Rauter P, Sanguinetti S. Droplet epitaxy quantum dot based infrared photodetectors. NANOTECHNOLOGY 2020; 31:245203. [PMID: 32106107 DOI: 10.1088/1361-6528/ab7aa6] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The fabrication and characterization of an infrared photodetector based on GaAs droplet epitaxy quantum dots embedded in Al0.3Ga0.7As barrier is reported. The high control over dot electronic properties and the high achievable number density allowed by droplet epitaxy technique permitted us to realize a device using a single dot layer in the active region. Moreover, thanks to the independent control over dot height and width, we were able to obtain a very sharp absorption peak in the thermal infrared region (3-8 μm). Low temperature photocurrent spectrum was measured by Fourier spectroscopy, showing a narrow peak at 198 meV (∼6.3 μm) with a full width at half maximum of 25 meV. The observed absorption is in agreement with theoretical prediction based on effective mass approximation of the dot electronic transition.
Collapse
Affiliation(s)
- Stefano Vichi
- LNESS and Department of Materials Science, University of Milano-Bicocca, via Cozzi 55, 20125 Milano, Italy
| | | | | | | | | | | | | | | | | | | | | |
Collapse
|
5
|
Bietti S, Basset FB, Scarpellini D, Fedorov A, Ballabio A, Esposito L, Elborg M, Kuroda T, Nemcsics Á, Tóth L, Manzoni C, Vozzi C, Sanguinetti S. Ga metal nanoparticle-GaAs quantum molecule complexes for terahertz generation. NANOTECHNOLOGY 2018; 29:365602. [PMID: 29911655 DOI: 10.1088/1361-6528/aacd20] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A hybrid metal-semiconductor nanosystem for the generation of THz radiation, based on the fabrication of GaAs quantum molecules-Ga metal nanoparticles complexes through a self assembly approach, is proposed. The role of the growth parameters, the substrate temperature, the Ga and As flux during the quantum dot molecule (QDM) fabrication and the metal nanoparticle alignment are discussed. The tuning of the relative positioning of QDMs and metal nanoparticles is obtained through the careful control of Ga droplet nucleation sites via Ga surface diffusion. The electronic structure of a typical QDM was evaluated on the base of the morphological characterizations performed by atomic force microscopy and cross sectional scanning electron microscopy, and the predicted results confirmed by micro-photoluminescence experiments, showing that the Ga metal nanoparticle-GaAs quantum molecule complexes are suitable for terahertz generation from intraband transition.
Collapse
Affiliation(s)
- Sergio Bietti
- L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, via Cozzi 53, I-20125 Milano, Italy
| | | | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
6
|
Park SI, Trojak OJ, Lee E, Song JD, Kyhm J, Han I, Kim J, Yi GC, Sapienza L. GaAs droplet quantum dots with nanometer-thin capping layer for plasmonic applications. NANOTECHNOLOGY 2018; 29:205602. [PMID: 29488899 DOI: 10.1088/1361-6528/aab2e1] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report on the growth and optical characterization of droplet GaAs quantum dots (QDs) with extremely-thin (11 nm) capping layers. To achieve such result, an internal thermal heating step is introduced during the growth and its role in the morphological properties of the QDs obtained is investigated via scanning electron and atomic force microscopy. Photoluminescence measurements at cryogenic temperatures show optically stable, sharp and bright emission from single QDs, at visible wavelengths. Given the quality of their optical properties and the proximity to the surface, such emitters are good candidates for the investigation of near field effects, like the coupling to plasmonic modes, in order to strongly control the directionality of the emission and/or the spontaneous emission rate, crucial parameters for quantum photonic applications.
Collapse
Affiliation(s)
- Suk In Park
- Center for Opto-Electronic Materials and Devices Research, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea. Department of Physics and Astronomy, Seoul National University, Seoul 08-826, Republic of Korea
| | | | | | | | | | | | | | | | | |
Collapse
|
7
|
Modeling of anisotropic properties of double quantum rings by the terahertz laser field. Sci Rep 2018; 8:6145. [PMID: 29670157 PMCID: PMC5906452 DOI: 10.1038/s41598-018-24494-w] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2017] [Accepted: 02/01/2018] [Indexed: 11/12/2022] Open
Abstract
The rendering of different shapes of just a single sample of a concentric double quantum ring is demonstrated realizable with a terahertz laser field, that in turn, allows the manipulation of electronic and optical properties of a sample. It is shown that by changing the intensity or frequency of laser field, one can come to a new set of degenerated levels in double quantum rings and switch the charge distribution between the rings. In addition, depending on the direction of an additional static electric field, the linear and quadratic quantum confined Stark effects are observed. The absorption spectrum shifts and the additive absorption coefficient variations affected by laser and electric fields are discussed. Finally, anisotropic electronic and optical properties of isotropic concentric double quantum rings are modeled with the help of terahertz laser field.
Collapse
|
8
|
Heyn C, Bartsch T, Sanguinetti S, Jesson D, Hansen W. Dynamics of mass transport during nanohole drilling by local droplet etching. NANOSCALE RESEARCH LETTERS 2015; 10:67. [PMID: 25852364 PMCID: PMC4385027 DOI: 10.1186/s11671-015-0779-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2014] [Accepted: 01/22/2015] [Indexed: 05/31/2023]
Abstract
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process during LDE is the removal of the deposited droplet material from its initial position during post-growth annealing. This paper studies the droplet material removal experimentally and discusses the results in terms of a simple model. The first set of experiments demonstrates that the droplet material is removed by detachment of atoms and spreading over the substrate surface. Further experiments establish that droplet etching requires a small arsenic background pressure to inhibit re-attachment of the detached atoms. Surfaces processed under completely minimized As pressure show no hole formation but instead a conservation of the initial droplets. Under consideration of these results, a simple kinetic scaling model of the etching process is proposed that quantitatively reproduces experimental data on the hole depth as a function of the process temperature and deposited amount of droplet material. Furthermore, the depth dependence of the hole side-facet angle is analyzed.
Collapse
Affiliation(s)
- Christian Heyn
- />Institut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, Hamburg, 20355 Germany
| | - Thorben Bartsch
- />Institut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, Hamburg, 20355 Germany
| | - Stefano Sanguinetti
- />L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano Bicocca, Milano, Via Cozzi 5320125 Italy
| | - David Jesson
- />School of Physics and Astronomy, Cardiff University, Cardiff, CF24 3AA United Kingdom
| | - Wolfgang Hansen
- />Institut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, Hamburg, 20355 Germany
| |
Collapse
|
9
|
Abbarchi M, Cavigli L, Somaschini C, Bietti S, Gurioli M, Vinattieri A, Sanguinetti S. Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings. NANOSCALE RESEARCH LETTERS 2011; 6:569. [PMID: 22039893 PMCID: PMC3226682 DOI: 10.1186/1556-276x-6-569] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/19/2011] [Accepted: 10/31/2011] [Indexed: 05/31/2023]
Abstract
A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission from localized states belonging to the ring structures is reported. The triple rings show a fast decay dynamics, around 40 ps, which is expected to be useful for ultrafast optical switching applications.
Collapse
Affiliation(s)
- Marco Abbarchi
- L.E.N.S. and Dipartimento di Fisica, Universitá di Firenze, Via Sansone 1, I-50019, Sesto Fiorentino, Italy
| | - Lucia Cavigli
- L.E.N.S. and Dipartimento di Fisica, Universitá di Firenze, Via Sansone 1, I-50019, Sesto Fiorentino, Italy
| | - Claudio Somaschini
- L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I-20125, Milano, Italy
| | - Sergio Bietti
- L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I-20125, Milano, Italy
| | - Massimo Gurioli
- L.E.N.S. and Dipartimento di Fisica, Universitá di Firenze, Via Sansone 1, I-50019, Sesto Fiorentino, Italy
| | - Anna Vinattieri
- L.E.N.S. and Dipartimento di Fisica, Universitá di Firenze, Via Sansone 1, I-50019, Sesto Fiorentino, Italy
| | - Stefano Sanguinetti
- L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I-20125, Milano, Italy
| |
Collapse
|
10
|
Somaschini C, Bietti S, Fedorov A, Koguchi N, Sanguinetti S. Erratum to: Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy. NANOSCALE RESEARCH LETTERS 2010; 5:1992. [PMID: 27502289 PMCID: PMC2991176 DOI: 10.1007/s11671-010-9816-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Affiliation(s)
- C Somaschini
- L-NESS and Dipartimento di Scienza dei Materiali, Universita' di Milano Bicocca, Via Cozzi 53, 20125, Milano, Italy
| | - S Bietti
- L-NESS and Dipartimento di Scienza dei Materiali, Universita' di Milano Bicocca, Via Cozzi 53, 20125, Milano, Italy
| | - A Fedorov
- CNISM, L-NESS and Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100, Como, Italy
| | - N Koguchi
- L-NESS and Dipartimento di Scienza dei Materiali, Universita' di Milano Bicocca, Via Cozzi 53, 20125, Milano, Italy
| | - S Sanguinetti
- L-NESS and Dipartimento di Scienza dei Materiali, Universita' di Milano Bicocca, Via Cozzi 53, 20125, Milano, Italy.
| |
Collapse
|