Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 °C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 °C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs.

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.

Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications

We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN) nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self-limited growth (TSSLG) mechanism. This allows for growth of nanorods with excellent geometrical uniformity with no visible extended defects over a 100 mm sapphire (Al₂O₃) wafer. An ex-situ study of the growth morphology as a function of growth time for the two self-limiting steps elucidate the growth dynamics, which show that formation of an Ehrlich-Schwoebel barrier and preferential growth in the c-plane direction governs the growth process. This process allows monolithic formation of dimensionally uniform nanowires on templates with varying filling matrix patterns for a variety of novel electronic and optoelectronic applications. A color tunable phosphor-free white light LED with a coaxial architecture is fabricated as a demonstration of the applicability of these nanorods grown by TSSLG.

Multi-electrolyte-step anodic aluminum oxide method for the fabrication of self-organized nanochannel arrays

Nanochannel arrays were fabricated by the self-organized multi-electrolyte-step anodic aluminum oxide [AAO] method in this study. The anodization conditions used in the multi-electrolyte-step AAO method included a phosphoric acid solution as the electrolyte and an applied high voltage. There was a change in the phosphoric acid by the oxalic acid solution as the electrolyte and the applied low voltage. This method was used to produce self-organized nanochannel arrays with good regularity and circularity, meaning less power loss and processing time than with the multi-step AAO method.

Where bio meets nano: the many uses for nanoporous aluminum oxide in biotechnology

Porous aluminum oxide (PAO) is a ceramic formed by an anodization process of pure aluminum that enables the controllable assembly of exceptionally dense and regular nanopores in a planar membrane. As a consequence, PAO has a high porosity, nanopores with high aspect ratio, biocompatibility and the potential for high sensitivity imaging and diverse surface modifications. These properties have made this unusual material attractive to a disparate set of applications. This review examines how the structure and properties of PAO connect with its present and potential uses within research and biotechnology. The role of PAO is covered in areas including microbiology, mammalian cell culture, sensitive detection methods, microarrays and other molecular assays, and in creating new nanostructures with further uses within biology.

InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy

The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.