PVP-assisted synthesis of Sb2S3 nanowire for self-driven photodetector by using MXenes and Ag nanowires as electrodes

Gate-controlled Sb2S3 thin film photodetectors for logic switches

Antimony sulfide (Sb2S3) photodetectors (PDs) have great potential in commercial applications. The performances are affected by photocarrier distribution and recombination. Here, the gate-controlled Sb2S3 thin film PD is fabricated on the TiO2/SiO2/Si substrate by the vacuum method. The p-channel Sb2S3 transistor obtained a threshold voltage of 0.6 V and a switching ratio of 1064, achieving an effective regulation by gate voltages. A negative gate voltage can enhance conductivity and can suppress recombination. The responsivity and detectivity of the PD reach 1.6 A/W and 1.2 × 1011 Jones, respectively. The device realizes logic outputs by the signal inputs of illumination and gate voltage.

Boosting photovoltaic performance for Sb2S3solar cells by ionic liquid-assisted hydrothermal synthesis

Bulk and surface trap-states in the Sb₂S₃films are considered one of the crucial energy loss mechanisms for achieving high photovoltaic performance in planar Sb₂S₃solar cells. Because ionic liquid additives offer interesting physicochemical properties to control the synthesis of inorganic material, in this work we propose the addition of 1-Butyl-3-methylimidazolium hydrogen sulfate (BMIMHS) into a Sb₂S₃hydrothermal precursor solution as a facile way to fabricate low-defect Sb₂S₃solar cells. Lower presence of small particles on the surface, as well as higher crystallinity are demonstrated in the BMIMHS-assisted Sb₂S₃films. Moreover, analyses of dark current density-voltageJ-Vcurves, surface photovoltage transient and intensity-modulated photocurrent spectroscopy have suggested that adding BMIMHS results in high-quality Sb₂S₃films and a successful defect passivation. Consequently, the best-performing BMIMHS-assisted device exhibits a 15.4% power conversion efficiency enhancement compared to that of control device. These findings show that ionic liquid BMIMHS can effectively be used to obtain high-quality Sb₂S₃films with low-defects and improved optoelectronic properties.