1
|
Yan B, Zhang F, Wang M, Zhang Y, Fu S. Flexible wearable sensors for crop monitoring: a review. FRONTIERS IN PLANT SCIENCE 2024; 15:1406074. [PMID: 38867881 PMCID: PMC11167128 DOI: 10.3389/fpls.2024.1406074] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2024] [Accepted: 05/07/2024] [Indexed: 06/14/2024]
Abstract
Crops were the main source of human food, which have met the increasingly diversified demand of consumers. Sensors were used to monitor crop phenotypes and environmental information in real time, which will provide a theoretical reference for optimizing crop growth environment, resisting biotic and abiotic stresses, and improve crop yield. Compared with non-contact monitoring methods such as optical imaging and remote sensing, wearable sensing technology had higher time and spatial resolution. However, the existing crop sensors were mainly rigid mechanical structures, which were easy to cause damage to crop organs, and there were still challenges in terms of accuracy and biosafety. Emerging flexible sensors had attracted wide attention in the field of crop phenotype monitoring due to their excellent mechanical properties and biocompatibility. The article introduced the key technologies involved in the preparation of flexible wearable sensors from the aspects of flexible preparation materials and advanced preparation processes. The monitoring function of flexible sensors in crop growth was highlighted, including the monitoring of crop nutrient, physiological, ecological and growth environment information. The monitoring principle, performance together with pros and cons of each sensor were analyzed. Furthermore, the future opportunities and challenges of flexible wearable devices in crop monitoring were discussed in detail from the aspects of new sensing theory, sensing materials, sensing structures, wireless power supply technology and agricultural sensor network, which will provide reference for smart agricultural management system based on crop flexible sensors, and realize efficient management of agricultural production and resources.
Collapse
Affiliation(s)
- Baoping Yan
- College of Agricultural Equipment Engineering, Henan University of Science and Technology, Luoyang, China
| | - Fu Zhang
- College of Agricultural Equipment Engineering, Henan University of Science and Technology, Luoyang, China
| | - Mengyao Wang
- College of Agricultural Equipment Engineering, Henan University of Science and Technology, Luoyang, China
| | - Yakun Zhang
- College of Agricultural Equipment Engineering, Henan University of Science and Technology, Luoyang, China
| | - Sanling Fu
- College of Physical Engineering, Henan University of Science and Technology, Luoyang, China
| |
Collapse
|
2
|
Lee GH, Kim K, Kim Y, Yang J, Choi MK. Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes. NANO-MICRO LETTERS 2023; 16:45. [PMID: 38060071 DOI: 10.1007/s40820-023-01254-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/19/2023] [Indexed: 12/08/2023]
Abstract
Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.
Collapse
Affiliation(s)
- Gwang Heon Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kiwook Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Yunho Kim
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
| | - Moon Kee Choi
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
| |
Collapse
|
3
|
Lin Q, Zhu Y, Wang Y, Li D, Zhao Y, Liu Y, Li F, Huang W. Flexible Quantum Dot Light-Emitting Device for Emerging Multifunctional and Smart Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210385. [PMID: 36880739 DOI: 10.1002/adma.202210385] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Revised: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Quantum dot light-emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region and solution-processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure-sensing EL devices, and neural smart EL devices, are reviewed. The remaining challenges are also summarized and an outlook on the future development of flexible QLEDs made. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications.
Collapse
Affiliation(s)
- Qinghong Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yangbin Zhu
- School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou, 325035, P. R. China
| | - Yue Wang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Deli Li
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yi Zhao
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yang Liu
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Wei Huang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
| |
Collapse
|
4
|
Lee M, Seung H, Kwon JI, Choi MK, Kim DH, Choi C. Nanomaterial-Based Synaptic Optoelectronic Devices for In-Sensor Preprocessing of Image Data. ACS OMEGA 2023; 8:5209-5224. [PMID: 36816688 PMCID: PMC9933102 DOI: 10.1021/acsomega.3c00440] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2023] [Accepted: 01/27/2023] [Indexed: 06/18/2023]
Abstract
With the advance in information technologies involving machine vision applications, the demand for energy- and time-efficient acquisition, transfer, and processing of a large amount of image data has rapidly increased. However, current architectures of the machine vision system have inherent limitations in terms of power consumption and data latency owing to the physical isolation of image sensors and processors. Meanwhile, synaptic optoelectronic devices that exhibit photoresponse similar to the behaviors of the human synapse enable in-sensor preprocessing, which makes the front-end part of the image recognition process more efficient. Herein, we review recent progress in the development of synaptic optoelectronic devices using functional nanomaterials and their unique interfacial characteristics. First, we provide an overview of representative functional nanomaterials and device configurations for the synaptic optoelectronic devices. Then, we discuss the underlying physics of each nanomaterial in the synaptic optoelectronic device and explain related device characteristics that allow for the in-sensor preprocessing. We also discuss advantages achieved by the application of the synaptic optoelectronic devices to image preprocessing, such as contrast enhancement and image filtering. Finally, we conclude this review and present a short prospect.
Collapse
Affiliation(s)
- Minkyung Lee
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
| | - Hyojin Seung
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
| | - Jong Ik Kwon
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Moon Kee Choi
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Dae-Hyeong Kim
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
- Department
of Materials Science and Engineering, Seoul
National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
| |
Collapse
|
5
|
Low energy irradiation induced effects on the surface characteristics of polydimethylsiloxane polymeric films. Macromol Res 2023. [DOI: 10.1007/s13233-023-00118-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/10/2023]
|
6
|
Yoo J, Li S, Kim DH, Yang J, Choi MK. Materials and design strategies for stretchable electroluminescent devices. NANOSCALE HORIZONS 2022; 7:801-821. [PMID: 35686540 DOI: 10.1039/d2nh00158f] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Stretchable displays have recently received increasing attention as input and/or output interfaces for next-generation human-friendly electronic systems. Stretchable electroluminescent (EL) devices are a core component of stretchable displays, and they can be classified into two types, structurally stretchable EL devices and intrinsically stretchable EL devices, according to the mechanism for achieving their stretchability. We herein present recent advances in materials and design strategies for stretchable EL devices. First, stretchable devices based on ultrathin EL devices are introduced. Ultrathin EL devices are mechanically flexible like thin paper, and they can become stretchable through various structural engineering methods, such as inducing a buckled structure, employing interconnects with stretchable geometries, and applying origami/kirigami techniques. Secondly, intrinsically stretchable EL devices can be fabricated by using inherently stretchable electronic materials. For example, light-emitting electrochemical cells and EL devices with a simpler structure using alternating current have been developed. Furthermore, novel stretchable semiconductor materials have been presented for the development of intrinsically stretchable light-emitting diodes. After discussing these two types of stretchable EL devices, we briefly discuss applications of deformable EL devices and conclude the review.
Collapse
Affiliation(s)
- Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Shi Li
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea.
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| |
Collapse
|
7
|
Wei Y, Geng Y, Wang K, Gao H, Wu Y, Jiang L. Organic ultrathin nanostructure arrays: materials, methods and applications. NANOSCALE ADVANCES 2022; 4:2399-2411. [PMID: 36134127 PMCID: PMC9417106 DOI: 10.1039/d1na00863c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Accepted: 04/20/2022] [Indexed: 06/16/2023]
Abstract
Organic ultrathin semiconductor nanostructures have attracted continuous attention in recent years owing to their excellent charge transport capability, favorable flexibility, solution-processability and adjustable photoelectric properties, providing opportunities for next-generation optoelectronic applications. For integrated electronics, organic ultrathin nanostructures need to be prepared as large-area patterns with precise alignment and high crystallinity to achieve organic electronic devices with high performance and high throughput. However, the fabrication of organic ultrathin nanostructure arrays still remains challenging due to uncontrollable growth along the height direction in solution processes. In this review, we first introduce the properties, assembly methods and applications of four typical organic ultrathin nanostructures, including small molecules, polymers, and other organic-inorganic hybrid materials. Five categories of representative solution-processing techniques for patterning organic micro- and nanostructures are summarized and discussed. Finally, challenges and perspectives in the controllable preparation of organic ultrathin arrays and potential applications are featured on the basis of their current development.
Collapse
Affiliation(s)
- Yanjie Wei
- Ji Hua Laboratory Foshan Guangdong 528200 P.R. China
| | - Yue Geng
- CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P.R. China
- University of Chinese Academy of Sciences (UCAS) Beijing 100049 P. R. China
| | - Kui Wang
- Ji Hua Laboratory Foshan Guangdong 528200 P.R. China
| | - Hanfei Gao
- Ji Hua Laboratory Foshan Guangdong 528200 P.R. China
- CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P.R. China
| | - Yuchen Wu
- Ji Hua Laboratory Foshan Guangdong 528200 P.R. China
- CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P.R. China
| | - Lei Jiang
- Ji Hua Laboratory Foshan Guangdong 528200 P.R. China
- CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P.R. China
| |
Collapse
|
8
|
Kim J, Hwang I, Kim M, Jung H, Bae H, Lee Y. Simple, Fast, and Scalable Reverse-Offset Printing of Micropatterned Copper Nanowire Electrodes with Sub-10 μm Resolution. ACS APPLIED MATERIALS & INTERFACES 2022; 14:5807-5814. [PMID: 35041372 DOI: 10.1021/acsami.1c21223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Copper nanowires (CuNWs) possess key characteristics for realizing flexible transparent electronics. High-quality CuNW micropatterns with high resolution and uniform thickness are required to realize integrated transparent electronic devices. However, patterning high-aspect-ratio CuNWs is challenging because of their long length, exceeding the target pattern dimension. This work reports a novel reverse-offset printing technology that enables the sub-10 μm high-resolution micropatterning of CuNW transparent conducting electrodes (TCEs). The CuNW ink for reverse-offset printing was formulated to control viscoelasticity, cohesive force, and adhesion by adjusting the ligands, solvents, surface energy modifiers, and leveling additives. An inexpensive commercial adhesive handroller achieved a simple, fast, and scalable micropatterning of CuNW TCEs. Easy production of high-quality CuNW micropatterns with various curvatures and shapes was possible, regardless of the printing direction. The reverse-offset-printed CuNW micropatterns exhibited a minimum of 7 μm line width and excellent pattern qualities such as fine line spacing, sharp edge definition, and outstanding pattern uniformity. In addition, they exhibited excellent sheet resistance, high optical transparency, outstanding mechanical durability, and long-term stability. Flexible light-emitting diode (LED) circuits, transparent heaters, and organic LEDs (OLEDs) can be fabricated using high-resolution reverse-offset-printed CuNW micropatterns for applications in flexible transparent electronic devices.
Collapse
Affiliation(s)
- Jongyoun Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-Eup, Dalseong-Gun, Daegu 42988, Republic of Korea
| | - Inkook Hwang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-Eup, Dalseong-Gun, Daegu 42988, Republic of Korea
| | - Minkyoung Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-Eup, Dalseong-Gun, Daegu 42988, Republic of Korea
| | - Hyeonwoo Jung
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-Eup, Dalseong-Gun, Daegu 42988, Republic of Korea
| | - Hyejeong Bae
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-Eup, Dalseong-Gun, Daegu 42988, Republic of Korea
| | - Youngu Lee
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-daero, Hyeonpung-Eup, Dalseong-Gun, Daegu 42988, Republic of Korea
| |
Collapse
|