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Wang H, Li W, Gloginjić M, Petrović S, Krupska TV, Turov VV, Zhao J, Yang W, Du Z, Chen S. High-Sensitivity Photoelectrochemical Ultraviolet Photodetector with Stable pH-Universal Adaptability Based on Whole Single-Crystal Integrated Self-Supporting 4H-SiC Nanoarrays. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2400045. [PMID: 38453678 DOI: 10.1002/smll.202400045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Revised: 02/28/2024] [Indexed: 03/09/2024]
Abstract
Emerging photoelectrochemical (PEC) photodetectors (PDs) have notable advantages over conventional PDs and have attracted extensive attention. However, harsh liquid environments, such as those with high corrosivity and attenuation, substantially restrict their widespread application. Moreover, most PEC PDs are constructed by assembling numerous nanostructures on current collector substrates, which inevitably contain abundant interfaces and defects, thus greatly weakening the properties of PDs. To address these challenges, a high-performance pH-universal PEC ultraviolet (UV) PD based on a whole single-crystal integrated self-supporting 4H-SiC nanopore array photoelectrode is constructed, which is fabricated using a two-step anodic oxidation approach. The PD exhibits excellent photodetection behavior, with high responsivity (218.77 mA W-1), detectivity (6.64 × 1013 Jones), external quantum efficiency (72.47%), and rapid rise/decay times (17/48 ms) under 375 nm light illumination with a low intensity of 0.15 mW cm-2 and a bias voltage of 0.6 V, which is fall in the state-of-the-art of the wide-bandgap semiconductor-based PDs reported thus far. Furthermore, the SiC PEC PD exhibits excellent photoresponse and long-term operational stability in pH-universal liquid environments. The improved photodetection performance of the SiC PEC PD is primarily attributed to the synergistic effect of the nanopore array structure, integrated self-supporting configuration, and single-crystal structure of the whole photoelectrode.
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Affiliation(s)
- Hulin Wang
- School of Resources, Environment and Materials, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, P. R. China
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Weijun Li
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Marko Gloginjić
- Laboratory of Physics, Vinča Institute of Nuclear Sciences-National Institute of the Republic of Serbia, University of Belgrade, Belgrade, 11351, Serbia
| | - Srdjan Petrović
- Laboratory of Physics, Vinča Institute of Nuclear Sciences-National Institute of the Republic of Serbia, University of Belgrade, Belgrade, 11351, Serbia
| | - Tetyana V Krupska
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
- Department of Nanoporous and Nanosized Carbon Materials, O. Chuiko Institute of Surface Chemistry, NASU, Kyiv, 03164, Ukraine
| | - Vladimir V Turov
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
- Department of Nanoporous and Nanosized Carbon Materials, O. Chuiko Institute of Surface Chemistry, NASU, Kyiv, 03164, Ukraine
| | - Jialong Zhao
- School of Physical Science and Technology, Guangxi University, Nanning, 530004, P. R. China
| | - Weiyou Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
| | - Zhentao Du
- School of Resources, Environment and Materials, State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, Guangxi University, Nanning, 530004, P. R. China
| | - Shanliang Chen
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China
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Esmailzadeh F, Taheri-Ledari R, Salehi MM, Zarei-Shokat S, Ganjali F, Mohammadi A, Zare I, Kashtiaray A, Jalali F, Maleki A. Bonding states of gold/silver plasmonic nanostructures and sulfur-containing active biological ingredients in biomedical applications: a review. Phys Chem Chem Phys 2024; 26:16407-16437. [PMID: 38807475 DOI: 10.1039/d3cp04131j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
As one of the most instrumental components in the architecture of advanced nanomedicines, plasmonic nanostructures (mainly gold and silver nanomaterials) have been paid a lot of attention. This type of nanomaterial can absorb light photons with a specific wavelength and generate heat or excited electrons through surface resonance, which is a unique physical property. In innovative biomaterials, a significant number of theranostic (therapeutic and diagnostic) materials are produced through the conjugation of thiol-containing ingredients with gold and silver nanoparticles (Au and Ag NPs). Hence, it is essential to investigate Au/Ag-S interfaces precisely and determine the exact bonding states in the active nanobiomaterials. This study intends to provide useful insights into the interactions between Au/Ag NPs and thiol groups that exist in the structure of biomaterials. In this regard, the modeling of Au/Ag-S bonding in active biological ingredients is precisely reviewed. Then, the physiological stability of Au/Ag-based plasmonic nanobioconjugates in real physiological environments (pharmacokinetics) is discussed. Recent experimental validation and achievements of plasmonic theranostics and radiolabelled nanomaterials based on Au/Ag-S conjugation are also profoundly reviewed. This study will also help researchers working on biosensors in which plasmonic devices deal with the thiol-containing biomaterials (e.g., antibodies) inside blood serum and living cells.
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Affiliation(s)
- Farhad Esmailzadeh
- Catalysts and Organic Synthesis Research Laboratory, Department of Chemistry, Iran University of Science and Technology, Tehran 16846-13114, Iran.
| | - Reza Taheri-Ledari
- Catalysts and Organic Synthesis Research Laboratory, Department of Chemistry, Iran University of Science and Technology, Tehran 16846-13114, Iran.
| | - Mohammad Mehdi Salehi
- Catalysts and Organic Synthesis Research Laboratory, Department of Chemistry, Iran University of Science and Technology, Tehran 16846-13114, Iran.
| | - Simindokht Zarei-Shokat
- Catalysts and Organic Synthesis Research Laboratory, Department of Chemistry, Iran University of Science and Technology, Tehran 16846-13114, Iran.
| | - Fatemeh Ganjali
- Catalysts and Organic Synthesis Research Laboratory, Department of Chemistry, Iran University of Science and Technology, Tehran 16846-13114, Iran.
| | - Adibeh Mohammadi
- Catalysts and Organic Synthesis Research Laboratory, Department of Chemistry, Iran University of Science and Technology, Tehran 16846-13114, Iran.
| | - Iman Zare
- Research and Development Department, Sina Medical Biochemistry Technologies Co., Ltd, Shiraz 7178795844, Iran
| | - Amir Kashtiaray
- Catalysts and Organic Synthesis Research Laboratory, Department of Chemistry, Iran University of Science and Technology, Tehran 16846-13114, Iran.
| | - Farinaz Jalali
- Catalysts and Organic Synthesis Research Laboratory, Department of Chemistry, Iran University of Science and Technology, Tehran 16846-13114, Iran.
| | - Ali Maleki
- Catalysts and Organic Synthesis Research Laboratory, Department of Chemistry, Iran University of Science and Technology, Tehran 16846-13114, Iran.
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3
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Chen L, Xie S, Lan J, Chai J, Lin T, Hao Q, Chen J, Deng X, Hu X, Li Y, Wang W, Li G. High-Speed and High-Responsivity Blue Light Photodetector with an InGaN NR/PEDOT:PSS Heterojunction Decorated with Ag NWs. ACS APPLIED MATERIALS & INTERFACES 2024; 16:29477-29487. [PMID: 38773964 DOI: 10.1021/acsami.4c06132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2024]
Abstract
InGaN nanorods possessing larger and wavelength selective absorption by regulating In component based visible light photodetectors (PDs) as one of the key components in the field of visible light communication have received widespread attention. Currently, the weak photoelectric conversion efficiency and slow photoresponse speed of InGaN nanorod (NR) based PDs due to high surface states of InGaN NRs impede the actualization of high-responsivity and high-speed blue light PDs. Here, we have demonstrated high-performance InGaN NR/PEDOT:PSS@Ag nanowire (NW) heterojunction blue light photodetectors utilizing surface passivation and a localized surface plasmon resonance effect. The dark current is significantly reduced by passivating the InGaN NR surface states using PEDOT:PSS. The photoelectric conversion efficiency is significantly increased by increasing light absorption due to the electromagnetic field oscillation of Ag NWs. The responsivity, external quantum efficiency, detectivity, and fall/off time of the InGaN NR/PEDOT:PSS@Ag NW PDs are up to 2.9 A/W, 856%, 6.64 × 1010 Jones, and 439/725 μs, respectively, under 1 V bias and 420 nm illumination. The proposed device design presents a novel approach toward the development of low-cost, high-responsivity, high-speed blue light photodetectors for applications involving visible light communication.
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Affiliation(s)
- Liang Chen
- State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China
| | - Shaohua Xie
- State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
| | - Jianyu Lan
- Shanghai Institute of Space Power-Sources, State Key Laboratory of Space Power-Sources Technology, Shanghai 200003, China
| | - Jixing Chai
- International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China
| | - Tingjun Lin
- State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
| | - Ququ Hao
- State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
| | - Jinrong Chen
- State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
| | - Xi Deng
- State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
| | - Xiaolong Hu
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China
| | - Yuan Li
- International School of Microelectronics, Dongguan University of Technology, Dongguan 523808, China
| | - Wenliang Wang
- State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
| | - Guoqiang Li
- State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510641, China
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China
- Guangdong Choicore Optoelectronics Co., Ltd., Heyuan 517003, China
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4
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Cao F, Liu Y, Liu M, Han Z, Xu X, Fan Q, Sun B. Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects. RESEARCH (WASHINGTON, D.C.) 2024; 7:0385. [PMID: 38803505 PMCID: PMC11128649 DOI: 10.34133/research.0385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 04/21/2024] [Indexed: 05/29/2024]
Abstract
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
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Affiliation(s)
- Fa Cao
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Ying Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Mei Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Xiaobao Xu
- School of Electronic Science and Engineering,
Southeast University, Nanjing 210000, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
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5
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Zhang X, Li H, Wang G, Wang S, Li J, Song J, Jin M, Zhou J, Chang P, Pan X. Ag-modified enhance the performances of ZnO@CFs based omnidirectional photoelectrochemical ultraviolet detectors. NANOTECHNOLOGY 2024; 35:325204. [PMID: 38701762 DOI: 10.1088/1361-6528/ad4711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Accepted: 05/03/2024] [Indexed: 05/05/2024]
Abstract
There are several prospective applications for omnidirectional ultraviolet (UV) detectors and underwater detection detectors in optical systems and optical fields. In this work, ZnO nanorods arrays were grown on carbon fibers (CFs). An appropriate amount of Ag nanoparticles (NPs) was deposited on the surface of ZnO nanorods by photochemical deposition. This improved the performance of photoelectrochemical (PEC) based UV detectors. Under 365 nm and 10 mW cm-2UV irradiation, the photocurrent density of the 30s-Ag/ZnO@CFs based PEC UV detector can reach 1.28 mA cm-2, which is about 7 times that of the ZnO@CFs based PEC UV detector, and the rising time is shortened from 0.17 to 0.10 s. The reason is that increased absorption of ultraviolet light induced by the localized surface plasmon resonance. In addition, the detector exhibits a good flexibility and remains flexible after hundreds of bends and twists. Moreover, the detector is responsive in the range of rotation angle from 0° to 360°. It provides an insight to improve the photoelectric performance and underwater omnidirectional detection ability of the PEC UV detector.
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Affiliation(s)
- Xinmiao Zhang
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Hongye Li
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Gang Wang
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Shimin Wang
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Jiang Li
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Jianqiao Song
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Mengjing Jin
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Jinyuan Zhou
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Peng Chang
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
| | - Xiaojun Pan
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, People's Republic of China
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6
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Silva JPB, Vieira EMF, Gwozdz K, Silva NE, Kaim A, Istrate MC, Ghica C, Correia JH, Pereira M, Marques L, MacManus-Driscoll JL, Hoye RLZ, Gomes MJM. High-performance and self-powered visible light photodetector using multiple coupled synergetic effects. MATERIALS HORIZONS 2024; 11:803-812. [PMID: 38010915 DOI: 10.1039/d3mh01725g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
In this work, we demonstrate, for the first time, that coupling together the pyroelectric effect, the photovoltaic effect and the plasmonic effect is a novel method to significantly enhance the performance of self-powered photodetectors in the visible region. Photodetectors based on tri-layered heterojunction of n-Si/p-SnO/n-ZnO through the inclusion of silver (Ag) nanoparticles (NPs) at the SnO/ZnO interface were fabricated. The photo-response of the device, with excitation from a chopped 650 nm wavelength laser, was carefully investigated, and it was shown that the photodetector performance is enhanced the most with the inclusion of spheroidal Ag NPs with ∼70 nm diameter. The Al/Si/SnO/Ag NPs/ZnO/ITO device exhibited an optimum responsivity, detectivity and sensitivity of 210.2 mA W-1, 5.47 × 109 Jones and 15.0 × 104, respectively, together with a rise and fall time of 2.3 and 51.3 μs, respectively, at a laser power density of 317 mW cm-2 and at a chopper frequency of 10 Hz. The present photodetectors are more than twice as responsive as the current best-performing ZnO-based pyro-phototronic photodetectors and they also exhibit other competitive features, such as detectivity, and fall and rise times. Therefore, by exploiting the plasmonic effect of the Ag NPs together with the pyroelectric effect in a ZnO film, and the photovoltaic effect at a Si/SnO junction, all in a single device, photodetectors were developed with state-of-the-art performance for the visible region.
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Affiliation(s)
- José P B Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Eliana M F Vieira
- CMEMS - UMinho, University of Minho, Campus de Azurem, 4804-533 Guimarães, Portugal
- LABBELS - Associate Laboratory, Braga, Guimarães, Portugal
| | - Katarzyna Gwozdz
- Department of Quantum Technologies, Wroclaw University of Science and Technology, Wroclaw 50-370, Poland
| | - Nuno E Silva
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Adrian Kaim
- Department of Quantum Technologies, Wroclaw University of Science and Technology, Wroclaw 50-370, Poland
| | - Marian C Istrate
- National Institute of Materials Physics, 105 bis Atomistilor, 077125 Magurele, Romania
- University of Bucharest, Faculty of Physics, Atomistilor 405, Magurele Ilfov 077125, Romania
| | - Corneliu Ghica
- National Institute of Materials Physics, 105 bis Atomistilor, 077125 Magurele, Romania
| | - José H Correia
- CMEMS - UMinho, University of Minho, Campus de Azurem, 4804-533 Guimarães, Portugal
- LABBELS - Associate Laboratory, Braga, Guimarães, Portugal
| | - Mario Pereira
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Luís Marques
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
| | - Judith L MacManus-Driscoll
- Dept. of Materials Science and Metallurgy, University of Cambridge, ., 27 Charles Babbage Rd, Cambridge, CB3 OFS, UK.
| | - Robert L Z Hoye
- Inorganic Chemistry Laboratory, Department of Chemistry, University of Oxford, South Parks Road, Oxford, OX1 3QR, UK
| | - Maria J M Gomes
- Physics Center of Minho and Porto Universities (CF-UM-UP), University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
- Laboratory of Physics for Materials and Emergent Technologies, LapMET, University of Minho, 4710-057 Braga, Portugal
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Guan T, Chen W, Tang H, Li D, Wang X, Weindl CL, Wang Y, Liang Z, Liang S, Xiao T, Tu S, Roth SV, Jiang L, Müller-Buschbaum P. Decoding the Self-Assembly Plasmonic Interface Structure in a PbS Colloidal Quantum Dot Solid for a Photodetector. ACS NANO 2023; 17:23010-23019. [PMID: 37948332 DOI: 10.1021/acsnano.3c08526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Hybrid plasmonic nanostructures have gained enormous attention in a variety of optoelectronic devices due to their surface plasmon resonance properties. Self-assembled hybrid metal/quantum dot (QD) architectures offer a means of coupling the properties of plasmonics and QDs to photodetectors, thereby modifying their functionality. The arrangement and localization of hybrid nanostructures have an impact on exciton trapping and light harvesting. Here, we present a hybrid structure consisting of self-assembled gold nanospheres (Au NSs) embedded in a solid matrix of PbS QDs for mapping the interface structures and the motion of charge carriers. Grazing-incidence small-angle X-ray scattering is utilized to analyze the localization and spacing of the Au NSs within the hybrid structure. Furthermore, by correlating the morphology of the Au NSs in the hybrid structure with the corresponding differences observed in the performance of photodetectors, we are able to determine the impact of interface charge carrier dynamics in the coupling structure. From the perspective of architecture, our study provides insights into the performance improvement of optoelectronic devices.
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Affiliation(s)
- Tianfu Guan
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Wei Chen
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
- Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People's Republic of China
| | - Haodong Tang
- College of Integrated Circuit and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, People's Republic of China
| | - Dong Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
| | - Xiao Wang
- Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center for Advanced Material Diagnostic Technology, and College of Engineering Physics, Shenzhen Technology University, Shenzhen 518118, People's Republic of China
| | - Christian L Weindl
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Yawen Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
| | - Zhiqiang Liang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
| | - Suzhe Liang
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Tianxiao Xiao
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Suo Tu
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
| | - Stephan V Roth
- Deutsches Elektronen-Synchrotron (DESY), Notkestr. 85, 22607 Hamburg, Germany
- KTH Royal Institute of Technology, Department of Fibre and Polymer Technology, Teknikringen 56-58, SE-100 44 Stockholm, Sweden
| | - Lin Jiang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, People's Republic of China
| | - Peter Müller-Buschbaum
- Technical University of Munich, TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, James-Franck-Str. 1, 85748 Garching, Germany
- Heinz Maier-Leibniz Zentrum (MLZ), Technical University of Munich, Lichtenbergstraße 1, 85748 Garching, Germany
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8
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Lin S, Habib MA, Burse S, Mandavkar R, Khalid T, Joni MH, Li MY, Kunwar S, Lee J. Hybrid UV Photodetector Design Incorporating AuPt Alloy Hybrid Nanoparticles, ZnO Quantum Dots, and Graphene Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2023; 15:2204-2215. [PMID: 36563284 DOI: 10.1021/acsami.2c19006] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
A hybrid device scheme is an attractive strategy in the construction of advanced UV photodetectors due to the flexibility in selecting the components and correspondingly improved optoelectronic properties by the cooperation of various components, which cannot be achieved by a single component device. In this work, a novel hybrid UV photodetector (PD) is demonstrated by adapting AuPt alloy hybrid nanoparticles (AHNPs), ZnO quantum dots (QDs), and graphene quantum dots (GQDs), namely, GQD/ZnO/AHNP PD. The optimized device achieves high-end figure-of-merit performance with a responsivity of 2299 mA/W, detectivity of 7.04 × 1010 jones, and external quantum efficiency of 741%. Enhanced photocurrent can be associated with the hot electron generation around the AuPt AHNPs and swift transfer to the conduction band of ZnO QDs. At the same time, the added carrier injection is achieved by a thin layer of GQDs. High density of hotspots and electromagnetic fields are generated by the strong localized surface plasmon resonance (LSPR) by the uniquely designed AuPt AHNPs with the fully alloyed AuPt NPs and adjacent small background Au NPs. The e-field distribution of various NP configurations is systematically investigated with finite-difference time-domain (FDTD) simulations.
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Affiliation(s)
- Shusen Lin
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul01897, South Korea
| | - Md Ahasan Habib
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul01897, South Korea
| | - Shalmali Burse
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul01897, South Korea
| | - Rutuja Mandavkar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul01897, South Korea
| | - Tasmia Khalid
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul01897, South Korea
| | - Mehedi Hasan Joni
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul01897, South Korea
| | - Ming-Yu Li
- School of Science, Wuhan University of Technology, Wuhan, Hubei430070, China
| | - Sundar Kunwar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul01897, South Korea
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico87545, United States
| | - Jihoon Lee
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul01897, South Korea
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9
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Wu C, Luo X, Yu X, Yu X, Lin K, Li M, Li Z, Cao Y, Zhou Y. Improving performance of ZnO Schottky photodetector by inserting MXenes modified-layer. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.107881] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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10
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Yuan D, Wan L, Zhang H, Jiang J, Liu B, Li Y, Su Z, Zhai J. An Internal-Electrostatic-Field-Boosted Self-Powered Ultraviolet Photodetector. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3200. [PMID: 36144988 PMCID: PMC9503600 DOI: 10.3390/nano12183200] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Revised: 09/09/2022] [Accepted: 09/12/2022] [Indexed: 06/16/2023]
Abstract
Self-powered photodetectors are of significance for the development of low-energy-consumption and environment-friendly Internet of Things. The performance of semiconductor-based self-powered photodetectors is limited by the low quality of junctions. Here, a novel strategy was proposed for developing high-performance self-powered photodetectors with boosted electrostatic potential. The proposed self-powered ultraviolet (UV) photodetector consisted of an indium tin oxide and titanium dioxide (ITO/TiO2) heterojunction and an electret film (poly tetra fluoroethylene, PTFE). The PTFE layer introduces a built-in electrostatic field to highly enhance the photovoltaic effect, and its high internal resistance greatly reduces the dark current, and thus remarkable performances were achieved. The self-powered UV photodetector with PTFE demonstrated an extremely high on-off ratio of 2.49 × 105, a responsivity of 76.87 mA/W, a response rise time of 7.44 ms, and a decay time of 3.75 ms. Furthermore, the device exhibited exceptional stability from room temperature to 70 °C. Compared with the conventional ITO/TiO2 heterojunction without the PTFE layer, the photoresponse of the detector improved by 442-fold, and the light-dark ratio was increased by 8.40 × 105 times. In addition, the detector is simple, easy to fabricate, and low cost. Therefore, it can be used on a large scale. The electrostatic modulation effect is universal for various types of semiconductor junctions and is expected to inspire more innovative applications in optoelectronic and microelectronic devices.
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Affiliation(s)
- Dingcheng Yuan
- Center on Nanoenergy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Lingyu Wan
- Center on Nanoenergy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Haiming Zhang
- Center on Nanoenergy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Jiang Jiang
- Center on Nanoenergy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Boxun Liu
- Center on Nanoenergy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Yongsheng Li
- Center on Nanoenergy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Zihan Su
- Center on Nanoenergy Research, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
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11
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Hadia NMA, Shaban M, Mohamed SH, Al‐Ghamdi AF, Alzaid M, Elsayed AM, Mourad AHI, Amin MA, Boukherroub R, Abdelazeez AAA, Rabia M. Highly crystalline hexagonal
PbI
2
sheets on polyaniline/antimony tin oxide surface as a novel and highly efficient photodetector in
UV
, Vis, and near
IR
regions. POLYM ADVAN TECHNOL 2022. [DOI: 10.1002/pat.5829] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Nomery M. A. Hadia
- Physics Department, College of Science Jouf University Sakaka Saudi Arabia
- Basic Sciences Research Unit Jouf University Sakaka Saudi Arabia
| | - Mohamed Shaban
- Nanophotonics and Applications Lab, Physics Department, Faculty of Science Beni‐Suef University Beni‐Suef Egypt
- Physics Department, Faculty of Science Islamic University of Madinah Madinah Saudi Arabia
| | - S. H. Mohamed
- Physics Department, Faculty of Science Sohag University Sohag Egypt
| | - Ali F. Al‐Ghamdi
- Chemistry Department, Faculty of Science Taibah University Al‐Madinah Saudi Arabia
| | - Meshal Alzaid
- Physics Department, College of Science Jouf University Sakaka Saudi Arabia
| | - Asmaa M. Elsayed
- Nanophotonics and Applications Lab, Physics Department, Faculty of Science Beni‐Suef University Beni‐Suef Egypt
| | | | - Mohammed A. Amin
- Materials and Corrosion Group, Department of Chemistry, Faculty of Science Taif University Hawiya Saudi Arabia
| | - Rabah Boukherroub
- University of Lille, CNRS, Centrale Lille Université Polytechnique Hauts‐de‐France, UMR 8520 – IEMN Lille France
| | - Ahmed Adel A. Abdelazeez
- Nanoscale Science, Chemistry Department University of North Carolina at Charlotte Charlotte North Carolina USA
| | - Mohamed Rabia
- Nanophotonics and Applications Lab, Physics Department, Faculty of Science Beni‐Suef University Beni‐Suef Egypt
- Nanomaterials Science Research Laboratory, Chemistry Department, Faculty of Science Beni‐Suef University Beni‐Suef Egypt
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12
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Zhao L, Liu C, Wang K. Progress of GaN-Based Optoelectronic Devices Integrated with Optical Resonances. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106757. [PMID: 35218296 DOI: 10.1002/smll.202106757] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 01/16/2022] [Indexed: 06/14/2023]
Abstract
Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanisms between optical resonances and quasiparticles, but also unveil the shield of novel optoelectronic devices with superior performances. In this review, the content covers the recent progress of GaN-based optoelectronic devices integrated with plasmonics and/or micro resonators, including the LEDs, photodetectors, solar cells, and light photocatalysis. The authors aim to provide an inspiring insight of recent remarkable progress and breakthroughs, as well as a promising prospect for the future highly-integrated, high speed, and efficient GaN-based optoelectronic devices.
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Affiliation(s)
- Lixia Zhao
- School of Electrical Engineering, Tiangong University, 399 Binshuixi Road, Tianjin, 300387, P. R. China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
| | - Chang Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
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13
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Lin S, Kulkarni R, Mandavkar R, Habib MA, Burse S, Kunwar S, Lee J. Surmounting the interband threshold limit by the hot electron excitation of multi-metallic plasmonic AgAuCu NPs for UV photodetector application. CrystEngComm 2022. [DOI: 10.1039/d2ce00367h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
Sharply improved photoresponse characteristics are demonstrated by the multi-metallic AgCu, AuCu and AgAuCu NP based UV-PDs through the superior photo carrier injection by the strong elemental composition-dependent hot electrons and localized surface plasmon resonance (LSPR).
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Affiliation(s)
- Shusen Lin
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Rakesh Kulkarni
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Rutuja Mandavkar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Md Ahasan Habib
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Shalmali Burse
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Sundar Kunwar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - Jihoon Lee
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
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14
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Wang F, Liu Y, Hoang TX, Chu HS, Chua SJ, Nijhuis CA. CMOS-Compatible Electronic-Plasmonic Transducers Based on Plasmonic Tunnel Junctions and Schottky Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105684. [PMID: 34741404 DOI: 10.1002/smll.202105684] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2021] [Indexed: 06/13/2023]
Abstract
To develop methods to generate, manipulate, and detect plasmonic signals by electrical means with complementary metal-oxide-semiconductor (CMOS)-compatible materials is essential to realize on-chip electronic-plasmonic transduction. Here, electrically driven, CMOS-compatible electronic-plasmonic transducers with Al-AlOX -Cu tunnel junctions as the excitation source of surface plasmon polaritons (SPPs) and Si-Cu Schottky diodes as the detector of SPPs, connected via plasmonic strip waveguides of Cu, are demonstrated. Remarkably, the electronic-plasmonic transducers exhibit overall transduction efficiency of 1.85 ± 0.03%, five times higher than previously reported transducers with two tunnel junctions (metal-insulator-metal (MIM)-MIM transducers) where SPPs are detected based on optical rectification. The result establishes a new platform to convert electronic signals to plasmonic signals via electrical means, paving the way toward CMOS-compatible plasmonic components.
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Affiliation(s)
- Fangwei Wang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Yan Liu
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore
| | - Thanh Xuan Hoang
- Department of Electronics and Photonics, Institute of High Performance Computing, A*STAR (Agency for Science Technology and Research), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Singapore
| | - Hong-Son Chu
- Department of Electronics and Photonics, Institute of High Performance Computing, A*STAR (Agency for Science Technology and Research), 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Singapore
| | - Soo-Jin Chua
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore
- LEES Program, Singapore-MIT Alliance for Research and Technology (SMART), Singapore, 138602, Singapore
| | - Christian A Nijhuis
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117564, Singapore
- Hybrid Materials for Opto-Electronics Group, Department of Molecules and Materials, MESA+ Institute for Nanotechnology and Center for Brain-Inspired Nano Systems, Faculty of Science and Technology, University of Twente, P.O. Box 2017, Enschede, 7500 AE, The Netherlands
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15
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Liu C, Li X, Hu T, Zhu W, Yan F, Wu T, Wang K, Zhao L. A nanopillar-modified high-sensitivity asymmetric graphene-GaN photodetector. NANOSCALE 2021; 13:17512-17520. [PMID: 34652361 DOI: 10.1039/d1nr04102a] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Integration of two-dimensional (2D) materials with three-dimensional (3D) semiconductors leads to intriguing optical and electrical properties that surpass those of the original materials. Here, we report the high performance of a GaN nanopillar-modified graphene/GaN/Ti/Au photodetector (PD). After etching on the surface of a GaN film, GaN nanopillars exhibit multiple functions for improving the detection performance of the PD. Under dark conditions, surface etching reduces the contact area of GaN with the graphene electrode, leading to a reduced dark current for the PD. When illuminated with UV light, the nanopillars enable an enhanced and localized electric field inside GaN, resulting in an ∼20% UV light absorption enhancement and a several-fold increased photocurrent. In addition, the nanopillars are intentionally etched beneath the metal Ti/Au electrode to modify the semiconductor-metal junction. Further investigation shows that the modified GaN/Ti/Au contact triggers a prominent rectifying I-V behaviour. Benefiting from the nanopillar modification, the proposed PD shows a record large detectivity of 1.85 × 1017 Jones, a small dark current of 5.2 nA at +3 V bias, and a nearly three order of magnitude rectification ratio enhancement compared with non-nanopillar PDs. This pioneering work provides a novel nanostructure-modifying method for combining 2D materials and 3D semiconductors to improve the performances of electronic and optoelectronic devices.
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Affiliation(s)
- Chang Liu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Xiaodong Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Tiangui Hu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Wenkai Zhu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Faguang Yan
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Tiesheng Wu
- Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guangxi, China
| | - Kaiyou Wang
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lixia Zhao
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- School of Electrical and Electronic Engineering, Tiangong University, 399 Binshuixi Road, Tianjin 300387, P. R. China.
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16
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Almohammedi A, Shaban M, Mostafa H, Rabia M. Nanoporous TiN/TiO 2/Alumina Membrane for Photoelectrochemical Hydrogen Production from Sewage Water. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2617. [PMID: 34685061 PMCID: PMC8540468 DOI: 10.3390/nano11102617] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 09/09/2021] [Accepted: 09/14/2021] [Indexed: 11/25/2022]
Abstract
An aluminum oxide, Al2O3, template is prepared using a novel Ni imprinting method with high hexagonal pore accuracy and order. The pore diameter after the widening process is about 320 nm. TiO2 layer is deposited inside the template using atomic layer deposition (ALD) followed by the deposition of 6 nm TiN thin film over the TiO2 using a direct current (DC) sputtering unit. The prepared nanotubular TiN/TiO2/Al2O3 was fully characterized using different analytical tools such as X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), and optical UV-Vis spectroscopy. Exploring the current-voltage relationships under different light intensities, wavelengths, and temperatures was used to investigate the electrode's application before and after Au coating for H2 production from sewage water splitting without the use of any sacrificing agents. All thermodynamic parameters were determined, as well as quantum efficiency (QE) and incident photon to current conversion efficiency (IPCE). The QE was 0.25% and 0.34% at 400 mW·cm-2 for the photoelectrode before and after Au coating, respectively. Also, the activation energy was 27.22 and 18.84 kJ·mol-1, the enthalpy was 24.26 and 15.77 J·mol-1, and the entropy was 238.1 and 211.5 kJ-1·mol-1 before and after Au coating, respectively. Because of its high stability and low cost, the prepared photoelectrode may be suitable for industrial applications.
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Affiliation(s)
- Abdullah Almohammedi
- Department of Physics, Faculty of Science, Islamic University in Madinah, Al-Madinah Al-Munawarah 42351, Saudi Arabia;
| | - Mohamed Shaban
- Department of Physics, Faculty of Science, Islamic University in Madinah, Al-Madinah Al-Munawarah 42351, Saudi Arabia;
| | - Huda Mostafa
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt; (H.M.); (M.R.)
| | - Mohamed Rabia
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni-Suef 62514, Egypt; (H.M.); (M.R.)
- Polymer Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni-Suef 62511, Egypt
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17
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Plasmon-Enhanced Photoresponse of Self-Powered Si Nanoholes Photodetector by Metal Nanowires. NANOMATERIALS 2021; 11:nano11092460. [PMID: 34578780 PMCID: PMC8471470 DOI: 10.3390/nano11092460] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Revised: 09/15/2021] [Accepted: 09/17/2021] [Indexed: 11/19/2022]
Abstract
In this work, we report the development of self-powered photodetectors that integrate silicon nanoholes (SiNHs) and four different types of metal nanowires (AgNWs, AuNWs, NiNWs, PtNWs) applied on the SiNHs’ surface using the solution processing method. The effectiveness of the proposed architectures is evidenced through extensive experimental and simulation analysis. The AgNWs/SiNHs device showed the highest photo-to-dark current ratio of 2.1 × 10−4, responsivity of 30 mA/W and detectivity of 2 × 1011 Jones along with the lowest noise equivalent power (NEP) parameter of 2.4 × 10−12 WHz−1/2 in the blue light region. Compared to the bare SiNHs device, the AuNWs/SiNHs device had significantly enhanced responsivity up to 15 mA/W, especially in the red and near-infrared spectral region. Intensity-modulated photovoltage spectroscopy (IMVS) measurements revealed that the AgNWs/SiNHs device generated the longest charge carrier lifetime at 470 nm, whereas the AuNWs/SiNHs showed the slowest recombination rate at 627 nm. Furthermore, numerical simulation confirmed the local field enhancement effects at the MeNWs and SiNHs interface. The study demonstrates a cost-efficient and scalable strategy to combine the superior light harvesting properties of SiNHs with the plasmonic absorption of metallic nanowires (MeNWs) towards enhanced sensitivity and spectral-selective photodetection induced by the local surface plasmon resonance effects.
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18
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Elsayed AM, Rabia M, Shaban M, Aly AH, Ahmed AM. Preparation of hexagonal nanoporous Al 2O 3/TiO 2/TiN as a novel photodetector with high efficiency. Sci Rep 2021; 11:17572. [PMID: 34475431 PMCID: PMC8413375 DOI: 10.1038/s41598-021-96200-2] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2021] [Accepted: 07/27/2021] [Indexed: 02/07/2023] Open
Abstract
The unique optical properties of metal nitrides enhance many photoelectrical applications. In this work, a novel photodetector based on TiO2/TiN nanotubes was deposited on a porous aluminum oxide template (PAOT) for light power intensity and wavelength detection. The PAOT was fabricated by the Ni-imprinting technique through a two-step anodization method. The TiO2/TiN layers were deposited by using atomic layer deposition and magnetron sputtering, respectively. The PAOT and PAOT/TiO2/TiN were characterized by several techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive X-ray (EDX). The PAOT has high-ordered hexagonal nanopores with dimensions ~ 320 nm pore diameter and ~ 61 nm interpore distance. The bandgap of PAOT/TiO2 decreased from 3.1 to 2.2 eV with enhancing absorption of visible light after deposition of TiN on the PAOT/TiO2. The PAOT/TiO2/TiN as photodetector has a responsivity (R) and detectivity (D) of 450 mAW-1 and 8.0 × 1012 Jones, respectively. Moreover, the external quantum efficiency (EQE) was 9.64% at 62.5 mW.cm-2 and 400 nm. Hence, the fabricated photodetector (PD) has a very high photoelectrical response due to hot electrons from the TiN layer, which makes it very hopeful as a broadband photodetector.
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Affiliation(s)
- Asmaa M Elsayed
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
| | - Mohamed Rabia
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- Polymer Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
| | - Mohamed Shaban
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- Department of Physics, Faculty of Science, Islamic University of Madinah, P. O. Box: 170, Al Madinah Almonawara, 42351, Saudi Arabia
| | - Arafa H Aly
- TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt.
| | - Ashour M Ahmed
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
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19
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Kunwar S, Pandit S, Kulkarni R, Mandavkar R, Lin S, Li MY, Lee J. Hybrid Device Architecture Using Plasmonic Nanoparticles, Graphene Quantum Dots, and Titanium Dioxide for UV Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:3408-3418. [PMID: 33399456 DOI: 10.1021/acsami.0c19058] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this work, a nanoscale device architecture is demonstrated for a UV photodetector application on sapphire (0001), incorporating the plasmonic hybrid nanoparticles (HNPs), graphene quantum dots (GQDs), and titanium oxide (TiO2) for the first time. The hybrid GQDs/TiO2/HNPs photodetector exhibits the photocurrent of 1.58 × 10-5 A under the 1.64 mW/mm2 of 275 nm illumination at 10 V, which is around two order increase from the bare TiO2 device. The proposed architecture demonstrates a low dark current of ∼1 × 10-10 A at 10 V and thus the device demonstrates an excellent photo to dark current ratio along with the improved rise and fall time on the order of several hundred millisecond. The enhanced performance of device architecture is attributed to the efficient utilization of localized surface plasmon resonance (LSPR) induced hot carriers as well as scattered photons from the plasmonic HNPs that are fully encapsulated by the photoactive TiO2 layers. Furthermore, the addition of GQDs on the TiO2 can offer an additional photon absorption pathway. The proposed hybrid architecture of GQDs/TiO2/HNPs demonstrates the integration of the photon absorption and carrier transfer properties of plasmonic HNPs, GQDs, and TiO2 for an enhanced ultraviolet (UV) photoresponse. The photocurrent enhancement mechanisms of the hybrid device architecture are thoroughly investigated based on the finite-difference time domain (FDTD) simulation along with the energy band analysis. This work demonstrates a great potential of the hybrid device architecture for high-performance UV photodetectors.
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Affiliation(s)
- Sundar Kunwar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu Seoul 01897, South Korea
| | - Sanchaya Pandit
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu Seoul 01897, South Korea
| | - Rakesh Kulkarni
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu Seoul 01897, South Korea
| | - Rutuja Mandavkar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu Seoul 01897, South Korea
| | - Shusen Lin
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu Seoul 01897, South Korea
| | - Ming-Yu Li
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Jihoon Lee
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu Seoul 01897, South Korea
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20
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Dubey A, Mishra R, Hsieh Y, Cheng C, Wu B, Chen L, Gwo S, Yen T. Aluminum Plasmonics Enriched Ultraviolet GaN Photodetector with Ultrahigh Responsivity, Detectivity, and Broad Bandwidth. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2002274. [PMID: 33344129 PMCID: PMC7740085 DOI: 10.1002/advs.202002274] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2020] [Revised: 08/17/2020] [Indexed: 05/30/2023]
Abstract
Plasmonics have been well investigated on photodetectors, particularly in IR and visible regimes. However, for a wide range of ultraviolet (UV) applications, plasmonics remain unavailable mainly because of the constrained optical properties of applicable plasmonic materials in the UV regime. Therefore, an epitaxial single-crystalline aluminum (Al) film, an abundant metal with high plasma frequency and low intrinsic loss is fabricated, on a wide bandgap semiconductive gallium nitride (GaN) to form a UV photodetector. By deliberately designing a periodic nanohole array in this Al film, localized surface plasmon resonance and extraordinary transmission are enabled; hence, the maximum responsivity (670 A W-1) and highest detectivity (1.48 × 1015 cm Hz1/2 W-1) is obtained at the resonance wavelength of 355 nm. In addition, owing to coupling among nanoholes, the bandwidth expands substantially, encompassing the entire UV range. Finally, a Schottky contact is formed between the single-crystalline Al nanohole array and the GaN substrate, resulting in a fast temporal response with a rise time of 51 ms and a fall time of 197 ms. To the best knowledge, the presented detectivity is the highest compared with those of other reported GaN photodetectors.
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Affiliation(s)
- Abhishek Dubey
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu300Taiwan
| | - Ragini Mishra
- Institute of NanoEngineering and MicroSystemsNational Tsing Hua UniversityHsinchu300Taiwan
| | - Yu‐Hung Hsieh
- Institute of NanoEngineering and MicroSystemsNational Tsing Hua UniversityHsinchu300Taiwan
- Research Centre for Applied ScienceAcademia SinicaTaipei115‐29Taiwan
| | - Chang‐Wei Cheng
- Department of PhysicsNational Tsing Hua UniversityHsinchu300Taiwan
| | - Bao‐Hsien Wu
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu300Taiwan
| | - Lih‐Juann Chen
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu300Taiwan
| | - Shangjr Gwo
- Institute of NanoEngineering and MicroSystemsNational Tsing Hua UniversityHsinchu300Taiwan
- Research Centre for Applied ScienceAcademia SinicaTaipei115‐29Taiwan
- Department of PhysicsNational Tsing Hua UniversityHsinchu300Taiwan
| | - Ta‐Jen Yen
- Department of Materials Science and EngineeringNational Tsing Hua UniversityHsinchu300Taiwan
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