Tuning the electronic, optical and structural properties of GaS/C2N van der Waals heterostructure for photovoltaic application: first-principle calculations

Two-Dimensional Gallium Sulfide Nanoflakes for UV-Selective Photoelectrochemical-type Photodetectors

Two-dimensional (2D) transition-metal monochalcogenides have been recently predicted to be potential photo(electro)catalysts for water splitting and photoelectrochemical (PEC) reactions. Differently from the most established InSe, GaSe, GeSe, and many other monochalcogenides, bulk GaS has a large band gap of ∼2.5 eV, which increases up to more than 3.0 eV with decreasing its thickness due to quantum confinement effects. Therefore, 2D GaS fills the void between 2D small-band-gap semiconductors and insulators, resulting of interest for the realization of van der Waals type-I heterojunctions in photocatalysis, as well as the development of UV light-emitting diodes, quantum wells, and other optoelectronic devices. Based on theoretical calculations of the electronic structure of GaS as a function of layer number reported in the literature, we experimentally demonstrate, for the first time, the PEC properties of liquid-phase exfoliated GaS nanoflakes. Our results indicate that solution-processed 2D GaS-based PEC-type photodetectors outperform the corresponding solid-state photodetectors. In fact, the 2D morphology of the GaS flakes intrinsically minimizes the distance between the photogenerated charges and the surface area at which the redox reactions occur, limiting electron-hole recombination losses. The latter are instead deleterious for standard solid-state configurations. Consequently, PEC-type 2D GaS photodetectors display a relevant UV-selective photoresponse. In particular, they attain responsivities of 1.8 mA W^-1 in 1 M H₂SO₄ [at 0.8 V vs reversible hydrogen electrode (RHE)], 4.6 mA W^-1 in 1 M Na₂SO₄ (at 0.9 V vs RHE), and 6.8 mA W^-1 in 1 M KOH (at 1.1. V vs RHE) under 275 nm illumination wavelength with an intensity of 1.3 mW cm^-2. Beyond the photodetector application, 2D GaS-based PEC-type devices may find application in tandem solar PEC cells in combination with other visible-sensitive low-band-gap materials, including transition-metal monochalcogenides recently established for PEC solar energy conversion applications.

Two-dimensional layered type-II MS2/BiOCl (M = Zr, Hf) van der Waals heterostructures: promising photocatalysts for hydrogen generation

Our theoretical findings reveal that in-plane biaxial strain tunes the bandgap and induces a transition from indirect to direct semiconductor.

Two-dimensional layered Janus-In2SeTe/C2N van der Waals heterostructures for photocatalysis and photovoltaics: first-principles calculations

Through DFT calculations, Janus-In₂SeTe/C₂N heterostructures are found to have great potential applications in the fields of clean and sustainable energy.

The C2N surface as a highly selective sensor for the detection of nitrogen iodide from a mixture of NX3 (X = Cl, Br, I) explosives

Explosives are quite toxic and destructive; therefore, it is necessary to not only detect them but also remove them. The adsorption behavior of NX₃ analytes (NCl₃, NBr₃ and NI₃) over the microporous C₂N surface was evaluated by DFT calculations. The nature of interactions between NX₃ and C₂N was characterized by adsorption energy, NCI, QTAIM, SAPT0, NBO, EDD and FMO analysis. The interaction energies of NX₃ with C₂N are in the range of −10.85 to −16.31 kcal mol⁻¹ and follow the order of NCl₃@C₂N > NBr₃@C₂N > NI₃@C₂N, respectively. The 3D isosurfaces and 2D-RGD graph of NCI analysis qualitatively confirmed the existence of halogen bonding interactions among the studied systems. Halogen bonding was quantified by SAPT0 component energy analysis. The SAPT0 results revealed that ΔE_disp (56.75%) is the dominant contributor towards interaction energy, whereas contributions from ΔE_elst and ΔE_ind are 29.41% and 14.34%, respectively. The QTAIM analysis also confirmed the presence of halogen bonding between atoms of NX₃ and C₂N surface. EDD analysis also validated NCI, QTAIM and NBO analysis. FMO analysis revealed that the adsorption of NI₃ on the C₂N surface caused the highest change in the E_HOMO–LUMO gap (from 5.71 to 4.15 eV), and resulted in high sensitivity and selectivity of the C₂N surface towards NI₃, as compared to other analytes. It is worth mentioning that in all complexes, a significant difference in the E_HOMO–LUMO gap was seen when electronic transitions occurred from the analyte to the C₂N surface.

Explosives are quite toxic and destructive; therefore, it is necessary to not only detect them but also remove them.