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For: De Cooman B, Carter C. The accommodation of misfit at {100} heterojunctions in III–V compound semiconductors by gliding dissociated dislocations. ACTA ACUST UNITED AC 1989;37:2765-77. [DOI: 10.1016/0001-6160(89)90311-8] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
Number Cited by Other Article(s)
1
Wagner G. Defect Structure of Strained Heteroepitaxial In(1—x)Al(x)P Layers Deposited by MOVPE on (001) GaAs Substrates. CRYSTAL RESEARCH AND TECHNOLOGY 1998. [DOI: 10.1002/(sici)1521-4079(1998)33:3<383::aid-crat383>3.0.co;2-v] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
2
Dynna M, Okada T, Weatherly G. The nature of dislocation sources and strain relief in InAsyP1−y films grown on 〈100〉 InP substrates. ACTA ACUST UNITED AC 1994. [DOI: 10.1016/0956-7151(94)90376-x] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
3
Zhu JG, Carter CB. 60° dislocations in (001) GaAs/Si interfaces. ACTA ACUST UNITED AC 1990. [DOI: 10.1080/01418619008242506] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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