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Surnev S, Netzer FP. Tungsten and molybdenum oxide nanostructures: two-dimensional layers and nanoclusters. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:233001. [PMID: 35045403 DOI: 10.1088/1361-648x/ac4ceb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2021] [Accepted: 01/19/2022] [Indexed: 06/14/2023]
Abstract
W- and Mo-oxides form an interesting class of materials, featuring structural complexities, stoichiometric flexibility, and versatile physical and chemical properties that render them attractive for many applications in diverse fields of nanotechnologies. In nanostructured form, novel properties and functionalities emerge as a result of quantum size and confinement effects. In this topical review, W- and Mo-oxide nanosystems are examined with particular emphasis on two-dimensional (2D) layers and small molecular-type clusters. We focus on the epitaxial growth of 2D layers on metal single crystal surfaces and investigate their novel geometries and structures by a surface science approach. The coupling between the oxide overlayer and the metal substrate surface is a decisive element in the formation of the oxide structures and interfacial strain and charge transfer are shown to determine the lowest energy structures. Atomic structure models as determined by density functional theory (DFT) simulations are reported and discussed for various interface situations, with strong and weak coupling. Free-standing (quasi-)2D oxide layers, so-called oxide nanosheets, are attracting a growing interest recently in the applied research community because of their easy synthesis via wet-chemical routes. Although they consist typically of several atomic layers thick-not always homogeneous-platelet systems, their quasi-2D character induces a number of features that make them attractive for optoelectronic, sensor or biotechnological device applications. A brief account of recently published preparation procedures of W- and Mo-oxide nanosheets and some prototypical examples of proof of concept applications are reported here. (MO3)3(M = W, Mo) clusters can be generated in the gas phase in nearly monodisperse form by a simple vacuum sublimation technique. These clusters, interesting molecular-type structures by their own account, can be deposited on a solid surface in a controlled way and be condensed into 2D W- and Mo-oxide layers; solid-state chemical reactions with pre-deposited surface oxide layers to form 2D ternary oxide compounds (tungstates, molybdates) have also been reported. The clusters have been proposed as model systems for molecular studies of reactive centres in catalytic reactions. Studies of the catalysis of (MO3)3clusters in unsupported and supported forms, using the conversion of alcohols as model reactions, are discussed. Finally, we close with a brief outlook of future perspectives.
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Affiliation(s)
- Svetlozar Surnev
- Surface and Interface Physics, Institute of Physics, Karl-Franzens University Graz, A-8010 GRAZ, Austria
| | - Falko P Netzer
- Surface and Interface Physics, Institute of Physics, Karl-Franzens University Graz, A-8010 GRAZ, Austria
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Shi K, Li DB, Song HP, Guo Y, Wang J, Xu XQ, Liu JM, Yang AL, Wei HY, Zhang B, Yang SY, Liu XL, Zhu QS, Wang ZG. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy. NANOSCALE RESEARCH LETTERS 2011; 6:50. [PMID: 27502672 PMCID: PMC3212014 DOI: 10.1007/s11671-010-9796-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2010] [Accepted: 09/10/2010] [Indexed: 05/30/2023]
Abstract
Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.
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Affiliation(s)
- K Shi
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
| | - D B Li
- Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 Dong Nan Hu Road, 130033, Changchun, People's Republic of China.
| | - H P Song
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - Y Guo
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - J Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - X Q Xu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - J M Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - A L Yang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - H Y Wei
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - B Zhang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - S Y Yang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - X L Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
| | - Q S Zhu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
| | - Z G Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China
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Liu JM, Liu XL, Xu XQ, Wang J, Li CM, Wei HY, Yang SY, Zhu QS, Fan YM, Zhang XW, Wang ZG. Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy. NANOSCALE RESEARCH LETTERS 2010; 5:1340-1343. [PMID: 20676206 PMCID: PMC2897041 DOI: 10.1007/s11671-010-9650-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2010] [Accepted: 05/17/2010] [Indexed: 05/29/2023]
Abstract
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being -0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
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Affiliation(s)
- JM Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - XL Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - XQ Xu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - J Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - CM Li
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - HY Wei
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - SY Yang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - QS Zhu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - YM Fan
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - XW Zhang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
| | - ZG Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People’s Republic of China
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Payne DJ, Egdell RG, Law DSL, Glans PA, Learmonth T, Smith KE, Guo J, Walsh A, Watson GW. Experimental and theoretical study of the electronic structures of α-PbO and β-PbO2. ACTA ACUST UNITED AC 2007. [DOI: 10.1039/b612323f] [Citation(s) in RCA: 98] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Fujimori A, Schlapbach L. Electronic structure of yttrium hydride studied by X-ray photoemission spectroscopy. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/17/2/021] [Citation(s) in RCA: 62] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Hill MD, Egdell RG. The sodium tungsten bronzes: a study of the changes in electronic structure with composition using high-resolution electron spectroscopy. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/16/32/013] [Citation(s) in RCA: 55] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Gulino A, Parker S, Jones FH, Egdell RG. Influence of metal–metal bonds on electron spectra of MoO2and WO2. ACTA ACUST UNITED AC 1996. [DOI: 10.1039/ft9969202137] [Citation(s) in RCA: 75] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Strong metal-support interaction in the Pt-Na0.7WO3 system: A study by low energy ion scattering spectroscopy and other surface sensitive techniques. Catal Letters 1990. [DOI: 10.1007/bf00764677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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Edwards P, Egdell R, Fragala I, Goodenough J, Harrison M, Orchard A, Scott E. A study of the spinel materials LiTi2O4 and by photoelectron spectroscopy. J SOLID STATE CHEM 1984. [DOI: 10.1016/0022-4596(84)90140-3] [Citation(s) in RCA: 60] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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Viswanathan K, Brandt K, Salje E. Crystal structure and charge carrier concentration of W18O49. J SOLID STATE CHEM 1981. [DOI: 10.1016/0022-4596(81)90190-0] [Citation(s) in RCA: 67] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Hollinger G, Pertosa P. Direct observation of the anderson transition in hxwo3 bronzes by high-resolution x-ray photoelectron spectroscopy. Chem Phys Lett 1980. [DOI: 10.1016/0009-2614(80)85173-6] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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Courths R, Steiner P, Höchst H, Hüfner S. Photoelectron-spectroscopy investigation and electronic properties of LiNbO3 crystal surfaces. ACTA ACUST UNITED AC 1980. [DOI: 10.1007/bf00895926] [Citation(s) in RCA: 55] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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