On the primary process in plasma-chemical and photochemical vapor deposition from silane: An ab initio study of unimolecular decomposition of SiH4 in the lowest triplet state

Matrix isolation infrared observation of HxSi(N2)y (x = 0, 1, 2 and y = 1, 2) transient species using a 121-nm vacuum ultraviolet photolysis source

Vacuum ultraviolet photolysis (121.6 nm) of silane in a nitrogen matrix at 12 K leads to the observation of several transient species, which have been characterized using Fourier transform infrared spectroscopy. Four transient species containing silicon and nitrogen have been observed (SiN2, Si(N2)2, HSiN2, and H2SiN2), and one transient species containing only silicon and hydrogen has been observed. The assignment of the infrared bands due to each of these species is accomplished by performing isotopic substitution experiments (SiD4, 15N2, and mixtures with SiH4 and 14N2), matrix annealing experiments, UV-visible photolysis experiments, by comparison with previous experimental matrix isolation frequencies, where available, and for HSiN2 and H2SiN2 by comparison to B3LYP/aug-cc-pVTZ-calculated vibrational frequencies. The observation and infrared assignment of the HSiN2 and H2SiN2 molecules in these experiments is significant in that HSiN2 has not been previously reported in the matrix isolation literature, and H2SiN2 has only been reported once previously by a different route of formation. The energetics of the overall formation pathways for the molecules observed in these experiments is discussed using B3LYP/aug-cc-pVTZ calculations.