The joint gas electron diffraction and mass spectrometric study of GeI4(g) + Ge(s) system. Molecular structure of germanium diiodide

The hierarchy of ab initio and DFT methods for describing an intramolecular non-covalent SiN contact in the silicon compounds using electron diffraction geometries

In the series of silatranes XSi(OCH2CH2)3N, 1 (X = Me, 1a; H, 1b; F, 1c) with the known gas electron diffraction (GED) structures, the problematic geometry of 1-methylsilatrane 1a has been revised. In particular, the new value of the SiN distance (dSiN) in 1a turned out to be ∼0.06 Å longer than the generally accepted one. This dSiN resolves the long-standing contradiction between the data of the structural and spectral experiments regarding the sensitivity of 1 to the medium effect. We also performed the ab initio and DFT study of the combined series of silatranes 1a-c, silylalkylamines H3Si(CH2)3NMe2 (2a) and F3SiCH2NMe2 (2b), silylhydrazines F3SiN(Me)NMe2 (2c) and F3SiN(SiMe3)NMe2 (2d), and silyloxyamines ClH2SiONMe2 (2e,f), (F3C)F2SiONMe2 (2g,h) and F3SiONMe2 (2i), in which the GED dSiN values are in a wide range of 2-3 Å. None of the involved quantum chemical methods has succeeded in reproducing all the experimental gas-phase dSiN values in 1a-c, 2a-i with an acceptable accuracy (0.01-0.03 Å). The problems of the used methods, primarily CCSD with the Pople basis sets, are caused by four molecules with the geminal SiNN and SiON fragments (2d,f-i) and dSiN < 2.3 Å. A reasonable hierarchy of computationally accessible theory levels for studying the physicochemical manifestation of the non-covalent intramolecular SiN interactions can be constructed only at dSiN > 2.3 Å: MP2 < PBE0 ∼ B3PW91 ∼ SCS-MP2 < CCSD < CCSD(T).

Combined gas electron diffraction and mass spectrometric experimental setup at Bielefeld University

We have designed and constructed a combined experimental setup for synchronous measurements of electron diffraction patterns and mass-spectra of gas samples. Test measurements have been performed for acetic acid at two temperatures, 296 K and 457 K. Electron diffraction data have been analyzed taking into account mass spectra measured in the same experiments. From the diffraction intensities, molecular structures and mole fractions of the acetic acid monomer and dimer have been refined. The obtained results demonstrate the importance of measuring mass spectra in gas electron diffraction experiments. In particular, it is possible to detect the sample decomposition, which can be used for the optimization of experimental conditions and for the data interpretation. The length of the hydrogen bond in the acetic acid dimer determined in this work, r_e(O⋯H) = 1.657(9) Å, is in good agreement with modern theoretical predictions. We recommend measuring the diffraction patterns of acetic acid for the calibration of the sample pressure in the diffraction volume.

Single vibronic level emission spectroscopic studies of the ground state energy levels and molecular structures of jet-cooled HGeBr, DGeBr, HGeI, and DGeI

Single vibronic level dispersed fluorescence spectra of jet-cooled HGeBr, DGeBr, HGeI, and DGeI have been obtained by laser excitation of selected bands of the A (1)A(")-X (1)A(') electronic transition. The measured ground state vibrational intervals were assigned and fitted to anharmonicity expressions, which allowed the harmonic frequencies to be determined for both isotopomers. In some cases, lack of a suitable range of emission data necessitated that some of the anharmonicity constants and vibrational frequencies be estimated from those of HGeClDGeCl and the corresponding silylenes (HSiX). Harmonic force fields were obtained for both molecules, although only four of the six force constants could be determined. The ground state effective rotational constants and force field data were combined to calculate average (r(z)) and approximate equilibrium (r(e) (z)) structures. For HGeBr r(e) (z)(GeH)=1.593(9) A, r(e) (z)(GeBr)=2.325(21) A, and the bond angle was fixed at our CCSD(T)/aug-cc-pVTZ ab initio value of 93.6 degrees . For HGeI we obtained r(e) (z)(GeH)=1.589(1) A, r(e) (z)(GeI)=2.525(5) A, and bond angle=93.2 degrees . Franck-Condon simulations of the emission spectra using ab initio Cartesian displacement coordinates reproduce the observed intensity distributions satisfactorily. The trends in structural parameters in the halogermylenes and halosilylenes can be readily understood based on the electronegativity of the halogen substituent.