Oxidation mechanisms of niobium, tantalum, molybdenum and tungsten

High-Temperature Oxidation Behavior of AlTiNiCuCox High-Entropy Alloys

In this study, the high-temperature oxidation behavior of a series of AlTiNiCuCo_x high-entropy alloys (HEAs) was explored. The AlTiNiCuCo_x (x = 0.5, 0.75, 1.0, 1.25, 1.5) series HEAs were prepared using a vacuum induction melting furnace, in which three kinds of AlTiNiCuCo_x (x = 0.5, 1.0, 1.5) alloys with different Co contents were oxidized at 800 °C for 100 h, and their oxidation kinetic curves were determined. The microstructure, morphology, structure, and phase composition of the oxide film surface and cross-sectional layers of AlTiNiCuCo_x series HEAs were analyzed using scanning electron microscopy (SEM), energy-dispersive spectrometry (EDS), and X-ray diffraction (XRD). The influence of Co content on the high-temperature oxidation resistance of the HEAs was discussed, and the oxidation mechanism was summarized. The results indicate that, at 800 °C, the AlTiNiCuCo_x (x = 0.5, 1.0, 1.5) series HEAs had dense oxide films and certain high-temperature oxidation resistance. With increasing Co content, the high-temperature oxidation resistance of the alloys also increased. With increasing time at high temperature, there was a significant increase in the contents of oxide species and Ti on the oxide film surface. In the process of high-temperature oxidation of AlTiNiCuCo_x series HEAs, the interfacial reaction, in which metal elements and oxygen in the alloy form ions through direct contact reaction, initially dominated, then the diffusion process gradually became the dominant oxidation factor as ions diffused and were transported in the oxide film.

Preparation and Characterization of NbxOy Thin Films: A Review

Niobium oxides (NbO, NbO2, Nb2O5), being a versatile material has achieved tremendous popularity to be used in a number of applications because of its outstanding electrical, mechanical, chemical, and magnetic properties. NbxOy films possess a direct band gap within the ranges of 3.2–4.0 eV, with these films having utility in different applications which include; optical systems, stainless steel, ceramics, solar cells, electrochromic devices, capacitor dielectrics, catalysts, sensors, and architectural requirements. With the purpose of fulfilling the requirements of a vast variety of the named applications, thin films having comprehensive properties span described by film composition, morphology, structural properties, and thickness are needed. The theory, alongside the research status of the different fabrication techniques of NbxOy thin films are reported in this work. The impact of fabrication procedures on the thin film characteristics which include; film thickness, surface quality, optical properties, interface properties, film growth, and crystal phase is explored with emphases on the distinct deposition process applied, are also described and discussed.

Chemical Nature of Electrode and the Switching Response of RF-Sputtered NbOx Films

In this study, the dominant role of the top electrode is presented for Nb₂O₅-based devices to demonstrate either the resistive switching or threshold characteristics. These Nb₂O₅-based devices may exhibit different characteristics depending on the selection of electrode. The use of the inert electrode (Au) initiates resistive switching characteristics in the Au/Nb₂O₅/Pt device. Alternatively, threshold characteristics are induced by using reactive electrodes (W and Nb). The X-ray photoelectron spectroscopy analysis confirms the presence of oxide layers of WO_y and NbO_x at interfaces for W and Nb as top electrodes. However, no interface layer between the top electrode and active layer is detected in X-ray photoelectron spectroscopy for Au as the top electrode. Moreover, the dominant phase is Nb₂O₅ for Au and NbO₂ for W and Nb. The threshold characteristics are attributed to the reduction of Nb₂O₅ phase to NbO₂ due to the interfacial oxide layer formation between the reactive top electrode and Nb₂O₅. Additionally, reliability tests for both resistive switching and threshold characteristics are also performed to confirm switching stabilities.

The Effect of Ge Addition on the Oxidation of Nb-24Ti-18Si Silicide Based Alloys

In this paper, we report research about the isothermal oxidation in air at 800 and 1200 °C for 100 h of the as-cast alloys (at.%) Nb-18Si-5Ge (ZF1), Nb-18Si-10Ge (ZF2), Nb-24Ti-18Si-5Ge (ZF3), Nb-24Ti-18Si-5Cr (ZF4), Nb-24Ti-18Si-5Al (ZF5), Nb-24Ti-18Si-5Al-5Cr-5Ge (ZF6), and Nb-24Ti-18Si-5Al-5Cr-5Ge-5Hf (ZF9), the microstructures of which were reported in previous publications. Only the alloys ZF1, ZF2, and ZF3 suffered from pest oxidation at 800 °C. The Ge addition substantially improved the oxidation resistance of the other alloys both at 800 °C and 1200 °C, which followed parabolic kinetics at 800 °C and in the early stages at 1200 °C and linear kinetics at longer times, where there was spallation of the scales. The Nb2O5 and TiNb2O7 oxides were formed in the scales of the alloys ZF4, ZF5, ZF6, and ZF9 at 800 °C and 1200 °C, the GeO2 was observed in all scales and the SiO2 in the scales of the alloys ZF4 and ZF5, the CrNbO4 in the scales of the alloys ZF4, ZF6, and ZF9 and the AlNbO4 in the scales of the alloys ZF5, ZF6, and ZF9. Diffusion zones were formed below the scale/substrate interface only in the alloys ZF4 and ZF5 where the Nbss and Nb5Si3 were contaminated by oxygen. However, these phases were not contaminated by oxygen in the bulk of the alloys ZF4, ZF5, ZF6, and ZF9. The alloys ZF9 and ZF6 exhibited the best oxidation behaviour at 800 °C and 1200 °C, respectively. The alloys were compared with Nb-silicide based alloys of similar compositions without Ge and Hf additions and the alloy ZF9 with refractory metal High Entropy Alloys. Compared with the former alloys, the addition of Ge reduced the vol % of the Nbss. Compared with the latter alloys, the superior oxidation behaviour of the alloy ZF9 was attributed to its higher and lower values respectively of the parameters δ and VEC.