Ammonothermalsynthese von kristallinem siliciumnitridimid, Si2N2NH

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects are covered, from fundamental autoclave technology, to reactivity and solubility of elements, to synthesized crystalline nitride materials and their properties. Initially, the potential of emerging and novel nitrides is discussed, motivating their synthesis in single crystal form. This is followed by a summary of our current understanding of the reactivity/solubility of species and the state-of-the-art single crystal synthesis for GaN, AlN, AlGaN, BN, InN, and, more generally, ternary and higher order nitrides. Investigation of the synthesized materials is presented, with a focus on point defects (impurities, native defects including hydrogenated vacancies) based on GaN and potential pathways for their mitigation or circumvention for achieving a wide range of controllable functional and structural material properties. Lastly, recent developments in autoclave technology are reviewed, based on GaN, with a focus on advances in development of in situ technologies, including in situ temperature measurements, optical absorption via UV/Vis spectroscopy, imaging of the solution and crystals via optical (visible, X-ray), along with use of X-ray computed tomography and diffraction. While time intensive to develop, these technologies are now capable of offering unprecedented insight into the autoclave and, hence, facilitating the rapid exploration of novel nitride synthesis using the ammonothermal method.

Ammonothermal Synthesis and Solid-State NMR Study of the Imidonitridosilicate Rb3Si6N5(NH)6

The imidonitridosilicate Rb3Si6N5(NH)6, being only the second representative of this compound class, was synthesized ammonothermally at 870 K and 230 MPa. Its crystal structure was solved from single-crystal X-ray diffraction data. The imidonitridosilicate crystallizes isotypically with the respective potassium compound in space group P4132 with the lattice parameter a=10.9422(4) Å forming a three-dimensional imidonitridosilicate tetrahedra network with voids for the rubidium ions. The structure model and the presence of the imide groups were verified by Fourier-Transform infrared (FTIR) and magic-angle spinning (MAS) NMR spectroscopy, using cross polarization 15N{1H} and 29Si{1H} MAS NMR experiments. Rb3Si6N5(NH)6 represents a possible intermediate during the ammonothermal synthesis of nitridosilicates. The characterization of such intermediates improves the understanding of the reaction pathway from ammonothermal solutions to nitrides. Thus, the ammonothermal synthesis is an alternative approach to the well-established high-temperature synthesis leading to the compound class of nitridosilicates.

The Fundamental Disorder Unit in (Si, P)-(O, N) Networks

This study presents the synthesis and characterization of oxonitridosilicate phosphates Sr3SiP3O2N7, Sr5Si2P4ON12, and Sr16Si9P9O7N33 as the first of their kind. These compounds were synthesized under high-temperature (1400 °C) and high-pressure (3 GPa) conditions. A unique structural feature is their common fundamental building unit, a vierer single chain of (Si, P)(O, N)4 tetrahedra. All tetrahedra comprise substitutional disorder which is why we refer to it as the fundamental disorder unit (FDU). We classified four different FDU motifs, revealing systematic bonding patterns. Including literature known Sr5Si2P6N16, three of the four patterns were found in the presented compounds. Common techniques like single-crystal X-ray diffraction (SCXRD), elemental analyses, and 31P nuclear magnetic resonance (NMR) spectroscopy were utilized for structural analysis. Additionally, low-cost crystallographic calculations (LCC) provided insights into the structure of Sr16Si9P9O7N33 where NMR data were unavailable due to the lack of bulk samples. The optical properties of these compounds, when doped with Eu2+, were investigated using photoluminescence excitation (PLE), photoluminescence (PL) measurements, and density functional theory (DFT) calculations. Factors influencing the emission properties, including thermal quenching mechanisms, were discussed. This research reveals the new class of oxonitridosilicate phosphates with unique systematic structural features that offer potential for theoretical studies of luminescence and band gap tuning in insulators.

Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging

In this contribution, first synthesis of semiconducting ZnSiN₂ and ZnGeN₂ from solution is reported with supercritical ammonia as solvent and KNH₂ as ammonobasic mineralizer. The reactions were conducted in custom-built high-pressure autoclaves made of nickel-based superalloy. The nitrides were characterized by powder X-ray diffraction and their crystal structures were refined by the Rietveld method. ZnSiN₂ (a=5.24637(4), b=6.28025(5), c=5.02228(4) Å, Z=4, R_wp =0.0556) and isotypic ZnGeN₂ (a=5.46677(10), b=6.44640(12), c=5.19080(10) Å, Z=4, R_wp =0.0494) crystallize in the orthorhombic space group Pna2₁ (no. 33). The morphology and elemental composition of the nitrides were examined by electron microscopy and energy-dispersive X-ray spectroscopy (EDX). Well-defined single crystals with a diameter up to 7 μm were grown by ammonothermal synthesis at temperatures between 870 and 1070 K and pressures up to 230 MPa. Optical properties have been analyzed with diffuse reflectance measurements. The band gaps of ZnSiN₂ and ZnGeN₂ were determined to be 3.7 and 3.2 eV at room temperature, respectively. In situ X-ray measurements were performed to exemplarily investigate the crystallization mechanism of ZnGeN₂ . Dissolution in ammonobasic supercritical ammonia between 570 and 670 K was observed which is quite promising for the crystal growth of ternary nitrides under ammonothermal conditions.

High-pressure synthesis and structural investigation of H3P8O8N9: a new phosphorus(V) oxonitride imide with an interrupted framework structure

The first crystalline phosphorus oxonitride imide H(3)P(8)O(8)N(9) (=P(8)O(8)N(6)(NH)(3)) has been synthesized under high-pressure and high-temperature conditions. To this end, a new, highly reactive phosphorus oxonitride imide precursor compound was prepared and treated at 12 GPa and 750 °C by using a multianvil assembly. H(3)P(8)O(8)N(9) was obtained as a colorless, microcrystalline solid. The crystal structure of H(3)P(8)O(8)N(9) was solved ab initio by powder X-ray diffraction analysis, applying the charge-flipping algorithm, and refined by the Rietveld method (C2/c (no. 15), a=1352.11(7), b=479.83(3), c=1820.42(9) pm, β=96.955(4)°, Z=4). H(3)P(8)O(8)N(9) exhibits a highly condensed (κ=0.47), 3D, but interrupted network that is composed of all-side vertex-sharing (Q(4)) and only threefold-linking (Q(3)) P(O,N)(4) tetrahedra in a Q(4)/Q(3) ratio of 3:1. The structure, which includes 4-ring assemblies as the smallest ring size, can be subdivided into alternating open-branched zweier double layers {oB,2(2)(∞)}[(2)P(3)(O,N)(7)] and layers containing pairwise-linked Q(3) tetrahedra parallel (001). Information on the hydrogen atoms in H(3)P(8)O(8)N(9) was obtained by 1D (1)H MAS, 2D homo- and heteronuclear (together with (31)P) correlation NMR spectroscopy, and a (1)H spin-diffusion experiment with a hard-pulse sequence designed for selective excitation of a single peak. Two hydrogen sites with a multiplicity ratio of 2:1 were identified and thus the formula of H(3)P(8)O(8)N(9) was unambiguously determined. The protons were assigned to Wyckoff positions 8f and 4e, the latter located within the Q(3) tetrahedra layers.

Microporous Silicon Nitride-Based Solid Bases

High surface area, microporous, amorphous silicon imidonitride, characterized by infrared spectroscopy, MAS 29Si NMR and surface area and porosity measurements has been prepared by the treatment of co-oligomers of methylsilazane and dimethyl silazanes with gaseous ammonia at temperatures up to 700°C. The material has a narrow pore-size distribution showing a maximum in the range associated with wide- pore zeolites (ca. 0.72 nm mean). Variation of the organic content of the silazane is a means of controlling the surface area of the resulting solid. The Knoevenagel condensation reaction of benzaldehyde with a series of active methylene compounds has been used to probe the basicity and size-selectivity of these microporous solid base catalysts.