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Mukhina MV, Tresback J, Ondry JC, Akey A, Alivisatos AP, Kleckner N. Single-Particle Studies Reveal a Nanoscale Mechanism for Elastic, Bright, and Repeatable ZnS:Mn Mechanoluminescence in a Low-Pressure Regime. ACS NANO 2021; 15:4115-4133. [PMID: 33596042 PMCID: PMC7995957 DOI: 10.1021/acsnano.0c08890] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Mechanoluminescent materials, which emit light in response to elastic deformation, are demanded for use as in situ stress sensors. ZnS doped with Mn is known to exhibit one of the lowest reported thresholds for appearance of mechanoluminescence, with repeatable light emission under contact pressure <10 MPa. The physical basis for such behavior remains as yet unclear. Here, reliable microscopic detection of mechanoluminescence of single ZnS:Mn microparticles, in combination with nanoscale structural characterization, provides evidence that the mechanoluminescent properties of these particles result from interplay between a non-centrosymmetric crystal lattice and its defects, viz., dislocations and stacking faults. Statistical analysis of the distributions of mechanoluminescence energy release trajectories reveals two distinct mechanisms of excitation: one attributable to a piezo-phototronic effect and the other due to dislocation motion. At pressures below 8.1 MPa, both mechanisms contribute to mechanoluminescent output, with a dominant contribution from the piezo-phototronic mechanism. In contrast, above 8.1 MPa, dislocation motion is the primary excitation source. For the piezo-phototronic mechanism, we propose a specific model that accounts for elastic ZnS:Mn mechanoluminescence under very low pressure. The charged interfaces in stacking faults lead to the presence of filled traps, which otherwise would be empty in the absence of the built-in electric field. Upon application of external stress, local enhancement of the piezoelectric field at the stacking faults' interfaces facilitates release of the trapped carriers and subsequent luminescence. This field enhancement explains how <10 MPa pressure produces thousands of photons.
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Affiliation(s)
- Maria V Mukhina
- Department of Molecular and Cellular Biology, Harvard University, 52 Oxford Street, Cambridge, Massachusetts 02138,United States
| | - Jason Tresback
- Center for Nanoscale Systems, Harvard University, 11 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - Justin C Ondry
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Austin Akey
- Center for Nanoscale Systems, Harvard University, 11 Oxford Street, Cambridge, Massachusetts 02138, United States
| | - A Paul Alivisatos
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute, Berkeley, California 94720, United States
| | - Nancy Kleckner
- Department of Molecular and Cellular Biology, Harvard University, 52 Oxford Street, Cambridge, Massachusetts 02138,United States
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Avetissov I, Mozhevitina E, Khomyakov A, Avetisov R. Nonstoichiometry of AIIBVIsemiconductors. CRYSTAL RESEARCH AND TECHNOLOGY 2014. [DOI: 10.1002/crat.201400215] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Igor Avetissov
- The Chair of Crystal Chemistry and Technology; D.Mendeleyev University of Chemical Technology of Russia; Miusskaya pl. 9 Moscow 125047 Russia
| | - Elena Mozhevitina
- The Chair of Crystal Chemistry and Technology; D.Mendeleyev University of Chemical Technology of Russia; Miusskaya pl. 9 Moscow 125047 Russia
| | - Andrew Khomyakov
- The Chair of Crystal Chemistry and Technology; D.Mendeleyev University of Chemical Technology of Russia; Miusskaya pl. 9 Moscow 125047 Russia
| | - Roman Avetisov
- The Chair of Crystal Chemistry and Technology; D.Mendeleyev University of Chemical Technology of Russia; Miusskaya pl. 9 Moscow 125047 Russia
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Oleinik GS, Danilenko NV. Polytype formation in nonmetallic substances. RUSSIAN CHEMICAL REVIEWS 2007. [DOI: 10.1070/rc1997v066n07abeh000286] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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Holt DB. The remote electron beam-induced current analysis of grain boundaries in semiconducting and semi-insulating materials. SCANNING 2000; 22:28-51. [PMID: 10768387 DOI: 10.1002/sca.4950220106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
When no charge collecting p-n junction or Schottky barrier is present in the specimen, but two contacts are applied, conductive mode scanning electron microscope (SEM) observations known as remote electron beam-induced current (REBIC) can be made. It was described as "remote" EBIC because the contacts to the specimen can lie at macroscopic distances from the beam impact point. In recent years, REBIC has been found to be useful not only for studies of grain boundaries in semiconducting silicon and germanium, but also in semi-insulating materials such as the wider bandgap II-VI compounds and electroceramic materials like varistor ZnO and positive temperature coefficient resistor (PTCR) BaTiO3. The principles of this method are outlined. Accounts are given of the five forms of charge collection and resistive contrast that appear at grain boundaries (GBs) in REBIC micrographs. These are (1) terraced contrast due to high resistivity boundary layers, (2) peak and trough (PAT) contrast due to charge on the boundary, (3) reversible contrast seen only under external voltage bias due to the beta-conductive effect in a low conductivity boundary layer, (4) dark contrast due to enhanced recombination, and (5) bright contrast apparently due to reduced recombination. For comparison, the results of the extensive EBIC studies of GBs in Si and Ge are first outlined and then the results of recent REBIC grain boundary studies in both semiconducting and semi-insulating materials are reviewed.
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Affiliation(s)
- D B Holt
- Department of Materials, Imperial College of Science, Technology and Medicine, London, UK
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Liu MT, Shapira Y, Bindilatti V, McNiff EJ. Magnetization steps of spin quartets. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:6457-6464. [PMID: 9986664 DOI: 10.1103/physrevb.54.6457] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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