A thermally-excited silicon accelerometer

A Differential Resonant Accelerometer with Low Cross-Interference and Temperature Drift

Presented in this paper is a high-performance resonant accelerometer with low cross-interference, low temperature drift and digital output. The sensor consists of two quartz double-ended tuning forks (DETFs) and a silicon substrate. A new differential silicon substrate is proposed to reduce the temperature drift and cross-interference from the undesirable direction significantly. The natural frequency of the quartz DETF is theoretically calculated, and then the axial stress on the vibration beams is verified through finite element method (FEM) under a 100 g acceleration which is loaded on x-axis, y-axis and z-axis, respectively. Moreover, sensor chip is wire-bonded to a printed circuit board (PCB) which contains two identical oscillating circuits. In addition, a steel shell is selected to package the sensor for experiments. Benefiting from the distinctive configuration of the differential structure, the accelerometer characteristics such as temperature drift and cross-interface are improved. The experimental results demonstrate that the cross-interference is lower than 0.03% and the temperature drift is about 18.16 ppm/°C.

A resonant sensor composed of quartz double ended tuning fork and silicon substrate for digital acceleration measurement

Presented in this paper is a micro-resonant acceleration sensor based on the frequency shift of quartz double ended tuning fork (DETF). The structure is silicon substrate having a proof mass supported by two parallel flexure hinges as doubly sustained cantilever, with a resonating DETF located between the hinges. The acceleration normal to the chip plane induces an axial stress in the DETF beam and, in turn, a proportional shift in the beam resonant frequency. Substrate is manufactured by single-crystal silicon for stable mechanical properties and batch-fabrication processes. Electrodes on the four surfaces of DETF beam excite anti-phase vibration model, to balance inner stress and torque and imply a high quality factor. The sensor is simply packaged and operates unsealed in atmosphere for measurements. The tested natural frequency is 36.9 kHz and the sensitivity is 21 Hz/g on a nominally ±100 g device, which is in good agreement with analytical calculation and finite element simulation. The output frequency drifting is less than 0.5 Hz (0.0014% of steady output) within 1 h. The nonlinearity is 0.0019%FS and hysteresis is 0.0026%FS. The testing results confirm the feasibility of combining quartz DETF and silicon substrate to achieve a micro-resonant sensor based on simple processing for digital acceleration measurements.