Low temperature luminescence spectra of the d10s2 complexes Cs2MX6 (M = Se, Te and X = Cl, Br). The Jahn—Teller effect in the Γ−4(3T1u) excited state

Ultrafast Solution-Phase Photophysical and Photochemical Dynamics of Hexaiodobismuthate(III), the Heart of Bismuth Halide Perovskite Solar Cells

The ultrafast relaxation pathways in a hexaiodide bismuth(III) complex, BiI₆^3-, excited at 530 nm in acetonitrile solution are studied by means of femtosecond transient absorption spectroscopy supported by steady-state absorption/emission measurements and DFT computations. Radiationless relaxation out of the Franck-Condon, largely metal-centered (MC) triply degenerate ³T_1u state (46 ± 19 fs), is driven by vibronic coupling due to the Jahn-Teller effect in the excited state. The relaxation populates two lower-energy states: a ligand-to-metal charge transfer (LMCT) excited state of ³π I(5p_π) → Bi(6p) nature and a luminescent "trap" ³A_1u(³P₀) MC state. Coherent population transfer from the initial ³T_1u into the ³π LMCT state occurs in an oscillatory, stepwise manner at ∼190 and ∼550 fs with a population ratio of ∼4:1. The ³π LMCT state decays with a 2.9 ps lifetime, yielding two short-lived reaction intermediates of which the first one reforms the parent ground state with a 15 ps time constant, and the second one decays on a ∼5 ps timescale generating the triplet product species, which persists to the longest 2 ns delay times investigated. This product is identified as the η² metal-ligated diiodide-bismuth adduct with the intramolecularly formed I-I bond, [(η²-I₂)Bi(II)I₄]^3-, which is the species of interest for solar energy conversion and storage applications. The lifetime of the "trap" ³A_1u state is estimated to be 13 ns from the photoluminescence quenching of BiI₆^3-. The findings give insight into the excited-state relaxation dynamics and the photochemical reaction mechanisms in halide complexes of heavy ns² metal ions.

Highly Emissive Self-Trapped Excitons in Fully Inorganic Zero-Dimensional Tin Halides

The spatial localization of charge carriers to promote the formation of bound excitons and concomitantly enhance radiative recombination has long been a goal for luminescent semiconductors. Zero-dimensional materials structurally impose carrier localization and result in the formation of localized Frenkel excitons. Now the fully inorganic, perovskite-derived zero-dimensional SnII material Cs4 SnBr6 is presented that exhibits room-temperature broad-band photoluminescence centered at 540 nm with a quantum yield (QY) of 15±5 %. A series of analogous compositions following the general formula Cs4-x Ax Sn(Br1-y Iy )6 (A=Rb, K; x≤1, y≤1) can be prepared. The emission of these materials ranges from 500 nm to 620 nm with the possibility to compositionally tune the Stokes shift and the self-trapped exciton emission bands.