Quantitative chemical lattice imaging: theory and practice

APPLICATION OF EXIT-PLANE WAVE FUNCTION IMAGES IN HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY FOR QUANTITATIVE ANALYSIS OF III–V SEMICONDUCTOR INTERFACES

An image simulation study is performed to investigate the applicability of exit-plane wave function (EPWF) images for an atomic-level compositional mapping of interfaces in the GaAs – AlAs system. A simple procedure for quantifying the composition across an interface, which is based on the method of factorial analysis of correspondence is proposed. A test of this procedure on a simulated EPWF-phase image of Al 0.4 Ga 0.6 As/GaAs/Al 0.4 Ga 0.6 As structure, with an atomically abrupt interface on one side and a graded interface on the other, yields profiles which mimic the model-profiles.

A pattern recognition method for lattice distortion measurement from HRTEM images

The idea of the method is to analyse a crystal lattice by creating a grid of quadrilaterals corresponding to repeated cells that are visible in the image. This approach combines image processing elements with a continuum field theory, to create a distortion-independent similarity measure that is used to select the most appropriate among possible lattice configurations. Subsequently, displacement and distortion fields are computed from individual cell positions. The method allows one to obtain these fields even for images where a periodic cell does not necessarily appear as a single dot of intensity in a high-resolution transmission electron microscopy (HRTEM) image, which results in a lower accuracy of commonly used approaches, namely geometric phase and peak finding. The results obtained from this method are verified quantitatively by comparison with known distortion tensor distributions and Burgers vector values on both simulated and real images.

A Closer “Look” at Modern Gate Oxides

Using high resolution TEM (HRTEM), we identified some process induced ‘weak spots’ in SiO2 layers: First, we observed thinning in the periphery of the transistor, i. e. near the boundary to the shallow trench isolation. At the boundary to the shallow trench, the Si substrate gradually changes its orientation from <100> to <110>, which results in an unexpected oxidation behavior in this region. Secondly, we observed the intrusion of poly-Si grains from the gate into the gate oxide, resulting in local thinning of the dielectric. Using image simulations, we show that conventional high resolution TEM can reveal the interface roughness only to a very limited extend.

Interface Roughness: What is it and How is it Measured?

A panel discussion on interface roughness was held at the Fall 1992 Materials Research Society meeting. We present a summary of the results presented by the invited speakers on the application and interpretation of X-ray reflectivity, atomic force microscopy (AFM), scanning tunneling microscopy (STM), photoluminescence and transmission electron microscopy. A transcript of the moderated discussion is provided in the final section.

Pattern recognition in high-resolution electron microscopy of complex materials

Structural features like defects or heterointerfaces in crystals or amorphous phases give rise to different local patterns in high-resolution electron micrographs or object wave functions. Pattern recognition techniques can be used to identify these typical patterns that constitute the image itself, as was already demonstrated for compositional changes in isostructural heterostructures, where the patterns within unit cells of the lattice were analyzed. To extend such analyses to more complex materials, we examined patterns in small circular areas centered on intensity maxima of the image. Nonsupervised clustering, namely, Ward's clustering method, was applied to these patterns. In two examples, a highly defective ZnMnTe layer on GaAs and a tunnel magneto resistance device, we demonstrate how typical patterns are identified by this method and how these results can be used for a further investigation of the microstructural properties of the sample.

Atomic-Resolution Measurement of Oxygen Concentration in Oxide Materials

Using high-resolution imaging at negative spherical aberration of the objective lens in an aberration-corrected transmission electron microscope, we measure the concentration of oxygen in Sigma3[111] twin boundaries in BaTiO3 thin films at atomic resolution. On average, 68% of the boundary oxygen sites are occupied, and the others are left vacant. The modified Ti2O9 group unit thus formed reduces the grain boundary energy and provides a way of accommodating oxygen vacancies occurring in oxygen-deficient material by the formation of a nanotwin lamellae structure. The atomically resolved measurement technique offers the potential for studies on oxide materials in which the electronic properties sensitively depend on the local oxygen content.

Layer ordering and faulting in (GaAs)n/(AlAs)n ultrashort-period superlattices

We report studies of (GaAs)(n)/(AlAs)(n) ultrashort-period superlattices using synchrotron x-ray scattering. In particular, we demonstrate that interfaces of these superlattices contain features on two different length scales: namely, random atomic mixture and ordered mesoscopic domains. Both features are asymmetric on the two interfaces (AlAs-on-GaAs and GaAs-on-AlAs) for n>2. Periodic compositional stacking faults, arising from the intrinsic nature of molecular-beam epitaxy, are found in the superlattices. In addition, the effect of growth interruption on the interfacial structure is discussed. The relevant scattering theory is developed to give excellent fits to the data.

A modeling and convolution method to measure compositional variations in strained alloy quantum dots

We have developed a method to quantitatively measure the absolute composition of nanometer sized capped quantum dots in semiconductor alloys. The method uses spatially resolved electron energy-loss spectroscopy in a scanning transmission electron microscope to measure compositional profiles across the center of the quantum dot and the adjacent nanometer wide wetting layer. The measurements from the wetting layer are used to derive a spatial broadening function which includes the effects of probe size, instabilities and beam spreading in the sample. This broadening function is employed to simulate compositional profiles from the quantum dots. Information on the dimensions of dots is extracted from annular dark-field images. The method is applied to In(y)Ga(1-y)As (y = 0.5) quantum dots grown on a GaAs substrate. In this system, a simple truncated cone model is found to give an adequate description of the compositional variations across the dot. We find a substantial enrichment in In at the center of the dots, in agreement with theoretical predictions.

Direct compositional analysis of AlGaAs/GaAs heterostructures by the reciprocal space segmentation of high-resolution micrographs

A detailed description of a combined reciprocal and real space technique for the mapping of layer compositions across interior interfaces from high-resolution electron micrographs is presented. The analysis is based on the reciprocal space extraction of chemically sensitive image information encoded in lattice images of AlGaAs/GaAs heterostructures taken under optimized imaging conditions. Analysis procedures include centering a set of apertures around chemically sensitive reflections in the Fourier transform of lattice images and performing an inverse transformation, thus extracting composition related information from experimental micrographs. It is demonstrated that this approach is characterized by the same spatial resolution as real space techniques but by improved capabilities with respect to analysing images characterized by a minor signal-to-noise ratio. For illustration purposes the stability of AlAs/GaAs multiple quantum wells grown under low-temperature conditions against thermal treatment as expressed by interfacial roughness parameters is investigated.

Compositional analysis based on electron holography and a chemically sensitive reflection

A method for compositional analysis of low-dimensional heterostructures is presented. The suggested procedure is based on electron holography and the exploitation of the chemically sensitive (0 0 2) reflection. We apply an off-axis imaging condition with the (0 0 2) beam strongly excited and centered on the optic axis. The first side band of the hologram is centered using an "empty" reference hologram obtained for a hole of the specimen. From the centered side band we use the phase of the central (0 0 0) and the amplitude of the (0 0 2) reflections to evaluate the local composition and the local specimen thickness in an iterative and self-consistent way. Delocalization effects that lead to a shift of the spatial information of (0 0 0) and (0 0 2) reflections are taken into account. The application of the procedure is demonstrated with an AlAs/GaAs(0 0 1) superlattice with a period of 5 nm. The concentration profiles obtained are discussed in relation to segregation. The measured segregation efficiency is R = 0.51 +/- 0.02.

Theoretical and experimental limits of the analysis of III/V semiconductors using EELS

The optimisation of acquisition conditions for EELS spectroscopy of Al(x)Ga(1-x)As heterostructures permits one to find the absolute concentration with a precision of better than delta = +/-0.02 and to detect changes in concentration of +/-0.01 for x = 0-0.5. In order to achieve this concentration precision, we investigated ways to reduce the influence of three major sources on the inaccuracies of the measurement: the effect of electron channelling which biases the ionisation probabilities on the different atomic sites, the contribution of the sample surface layers and the accuracy in the spectral analysis. An optimal specimen orientation that maximises the stability of the electron densities on Al and As sites without introducing an unacceptable loss of spatial resolution due to sample tilt is found by computing the electron channelling intensity as a function of the specimen tilt angle. The influence of a Ga enriched surface layer on the analysis is demonstrated. Two methods for the extraction of the edge intensity from the spectra are compared. These methods are shown to give the upper and the lower limit of the Ga concentration.

HREM of CoSi2/SiC heterophase interface: facts and artifacts in the interface distance profile measurements

When studying heterophase interfaces, one of the ultimate goals is to determine the local distortions and to extract a chemical profile. In this respect, HREM is a powerful tool. Nevertheless, the non-linearity of the image formation leads to artifacts both in the images and in the distance profiles extracted from the images. The present SiC/silicide interface study illustrates the misinterpretation, which might arise from measurements made on images recorded under limited experimental conditions.

Image segmentation and bright contrast spot localization of the high resolution atomic image

Some basic quantitative analysis techniques of digitized high resolution atomic image are developed in this paper. We describe how to divide the atomic image into small independent areas with special structure information by the valley mesh segmentation method. The procedure is with regard to the bright contrast spot segmentation of atomic images. We suggest several ways for bright contrast spot localization in images. Calculation routines for peak detection and weighted local position average methods for this purpose are given.