Some practical consequences of the Lorentzian angular distribution of inelastic scattering

Elucidation of the Transport Properties of Calcium-Doped High Entropy Rare Earth Aluminates for Solid Oxide Fuel Cell Applications

Solid oxide fuel cells (SOFCs) are paving the way to clean energy conversion, relying on efficient oxygen-ion conductors with high ionic conductivity coupled with a negligible electronic contribution. Doped rare earth aluminates are promising candidates for SOFC electrolytes due to their high ionic conductivity. However, they often suffer from p-type electronic conductivity at operating temperatures above 500 °C under oxidizing conditions caused by the incorporation of oxygen into the lattice. High entropy materials are a new class of materials conceptualized to be stable at higher temperatures due to their high configurational entropy. Introducing this concept to rare earth aluminates can be a promising approach to stabilize the lattice by shifting the stoichiometric point of the oxides to higher oxygen activities, and thereby, reducing the p-type electronic conductivity in the relevant oxygen partial pressure range. In this study, the high entropy oxide (Gd,La,Nd,Pr,Sm)AlO3 is synthesized and doped with Ca. The Ca-doped (Gd,La,Nd,Pr,Sm)AlO3 compounds exhibit a higher ionic conductivity than most of the corresponding Ca-doped rare earth aluminates accompanied by a reduction of the p-type electronic conductivity contribution typically observed under oxidizing conditions. In light of these findings, this study introduces high entropy aluminates as a promising candidate for SOFC electrolytes.

High-Energy Electron Scattering in Thick Samples Evaluated by Bright-Field Transmission Electron Microscopy, Energy-Filtering Transmission Electron Microscopy, and Electron Tomography

Energy-filtering transmission electron microscopy (TEM) and bright-field TEM can be used to extract local sample thickness $t$ and to generate two-dimensional sample thickness maps. Electron tomography can be used to accurately verify the local $t$. The relations of log-ratio of zero-loss filtered energy-filtering TEM beam intensity ($I_{{\rm ZLP}}$) and unfiltered beam intensity ($I_{\rm u}$) versus sample thickness $t$ were measured for five values of collection angle in a microscope equipped with an energy filter. Furthermore, log-ratio of the incident (primary) beam intensity ($I_{\rm p}$) and the transmitted beam $I_{{\rm tr}}$ versus $t$ in bright-field TEM was measured utilizing a camera before the energy filter. The measurements were performed on a multilayer sample containing eight materials and thickness $t$ up to 800 nm. Local thickness $t$ was verified by electron tomography. The following results are reported:• The maximum thickness $t_{{\rm max}}$ yielding a linear relation of log-ratio, $\ln ( {I_{\rm u}}/{I_{{\rm ZLP}}})$ and $\ln ( {I_{\rm p}}/{I_{{\rm tr}}} )$, versus $t$.• Inelastic mean free path ($\lambda _{{\rm in}}$) for five values of collection angle.• Total mean free path ($\lambda _{{\rm total}}$) of electrons excluded by an angle-limiting aperture.• $\lambda _{{\rm in}}$ and $\lambda _{{\rm total}}$ are evaluated for the eight materials with atomic number from $\approx$10 to 79.The results can be utilized as a guide for upper limit of $t$ evaluation in energy-filtering TEM and bright-field TEM and for optimizing electron tomography experiments.

Materials characterisation by angle-resolved scanning transmission electron microscopy

Solid-state properties such as strain or chemical composition often leave characteristic fingerprints in the angular dependence of electron scattering. Scanning transmission electron microscopy (STEM) is dedicated to probe scattered intensity with atomic resolution, but it drastically lacks angular resolution. Here we report both a setup to exploit the explicit angular dependence of scattered intensity and applications of angle-resolved STEM to semiconductor nanostructures. Our method is applied to measure nitrogen content and specimen thickness in a GaN_xAs_1-x layer independently at atomic resolution by evaluating two dedicated angular intervals. We demonstrate contrast formation due to strain and composition in a Si- based metal-oxide semiconductor field effect transistor (MOSFET) with Ge_xSi_1-x stressors as a function of the angles used for imaging. To shed light on the validity of current theoretical approaches this data is compared with theory, namely the Rutherford approach and contemporary multislice simulations. Inconsistency is found for the Rutherford model in the whole angular range of 16-255 mrad. Contrary, the multislice simulations are applicable for angles larger than 35 mrad whereas a significant mismatch is observed at lower angles. This limitation of established simulations is discussed particularly on the basis of inelastic scattering.

Breakdown of the dipole approximation in core losses

The validity of the dipole approximations commonly used in the inelastic scattering theory for transmission electron microscopy is reviewed. Both experimental and numerical arguments are presented, emphasizing that the dipole approximations cause significant errors of the order of up to 25% even at small momentum transfer. This behavior is attributed mainly to non-linear contributions to the dynamic form factor due to the overlap of wave functions.

EFTEM assistant: A tool to understand the limitations of EFTEM

The first version of a free tool for Gatan's Digital Micrographtrade mark is presented which aims to aid the energy-filtered TEM (EFTEM) community by predicting and correcting the most common sources of degradation. The software allows selection of either Krivanek's or Egerton's approach to account for the spatial resolution degradation caused by the electron optical aberrations. The effects of aberrations and signal 'delocalization' are combined to simulate the blurring caused in EFTEM elemental maps. Two microstructural features with ideal geometry are used to illustrate use of the software: spherical particles and parallel sided interfaces. The software also allows the simulation of the effects of the noise and drift in the final elemental map, independently or in combination. It can be easily demonstrated that when the dimensions of the feature of interest are comparable in scale to the image degradation factors, the effects of the latter should not be neglected. More importantly, the software can deconvolute the effects of the degradation factors, revealing the true dimensions and signal intensity of the feature of interest.

Energy-filtered electron-diffracted beam holography

A method of energy-filtered electron holography is described where any two electron-diffracted beams can be interfered using an electron biprism. A Gatan image filter is used to select the energy loss of the electrons produced in the holograms. Gallium arsenide is used as the TEM specimen. This method of microscopy confirms that fringes extending beyond a limiting aperture were due to inelastically scattered electrons and specifically electrons scattered from the bulk plasmon. The degree of coherence of the zero-loss and energy-loss electrons were high and measured to be approximately 0.3, which was maintained even for the high energy-loss electrons up to 100 eV. Future systematic studies using this method should help understand the Stobbs factor and contribute to the development of quantitative high-resolution electron microscopy.

Electron energy-loss spectroscopic profiling of thin film structures: 0.39 nm line resolution and 0.04 eV precision measurement of near-edge structure shifts at interfaces

The method of energy-loss spectroscopic profiling of interfaces, planar defects and thin film structures in a transmission electron microscope with an imaging filter is introduced. Ways to calculate true chemical profiles with near-atomic line resolution are described. An application to the perovskite system (La,Ca)MnO(3)/SrTiO(3) demonstrates that the technical merit of this method is the simultaneous achievement of high resolution (down to 0.39nm line resolution), high chemical sensitivity (around 1at% standard deviation) and very high precision in the measurement of shifts of edge onsets and energy-loss near-edge structure details (down to 0.04eV). The combination of these characteristics makes the method a powerful tool for the quantification of diffusion and segregation of elements on the atomic scale in a variety of materials systems.