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For: Scheffler M. Lattice relaxations at substitutional impurities in semiconductors. ACTA ACUST UNITED AC 1987. [DOI: 10.1016/0378-4363(87)90060-x] [Citation(s) in RCA: 41] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Number Cited by Other Article(s)
1
Hofmann OT, Zojer E, Hörmann L, Jeindl A, Maurer RJ. First-principles calculations of hybrid inorganic-organic interfaces: from state-of-the-art to best practice. Phys Chem Chem Phys 2021;23:8132-8180. [PMID: 33875987 PMCID: PMC8237233 DOI: 10.1039/d0cp06605b] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2020] [Accepted: 03/05/2021] [Indexed: 12/18/2022]
2
Taucher T, Hofmann OT, Zojer E. Final-State Simulations of Core-Level Binding Energies at Metal-Organic Hybrid Interfaces: Artifacts Caused by Spurious Collective Electrostatic Effects. ACS OMEGA 2020;5:25868-25881. [PMID: 33073112 PMCID: PMC7557941 DOI: 10.1021/acsomega.0c03209] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2020] [Accepted: 09/14/2020] [Indexed: 05/08/2023]
3
Xu Y, Hofmann OT, Schlesinger R, Winkler S, Frisch J, Niederhausen J, Vollmer A, Blumstengel S, Henneberger F, Koch N, Rinke P, Scheffler M. Space-charge transfer in hybrid inorganic-organic systems. PHYSICAL REVIEW LETTERS 2013;111:226802. [PMID: 24329464 DOI: 10.1103/physrevlett.111.226802] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2013] [Indexed: 05/24/2023]
4
Hofmann OT, Deinert JC, Xu Y, Rinke P, Stähler J, Wolf M, Scheffler M. Large work function reduction by adsorption of a molecule with a negative electron affinity: Pyridine on ZnO(101¯0). J Chem Phys 2013;139:174701. [DOI: 10.1063/1.4827017] [Citation(s) in RCA: 62] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]  Open
5
Richter NA, Sicolo S, Levchenko SV, Sauer J, Scheffler M. Concentration of vacancies at metal-oxide surfaces: case study of MgO(100). PHYSICAL REVIEW LETTERS 2013;111:045502. [PMID: 23931382 DOI: 10.1103/physrevlett.111.045502] [Citation(s) in RCA: 44] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2013] [Indexed: 05/24/2023]
6
Stoneham AM, Pajot B, Schober HR. Local distortions and volume changes in semiconductors: donors in silicon. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/21/26/016] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
7
Haug A. Auger recombination at double donors. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/21/36/010] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
8
Casali RA, Caravaca MA, Rodriguez CO. Local relaxations and electric-field gradient at the Cd site in heavily doped Si:Cd. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:16701-16705. [PMID: 9985798 DOI: 10.1103/physrevb.54.16701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
9
Liang ZN, Denteneer PJ, Niesen L. Microscopic structures of Sb-H, Te-H, and Sn-H complexes in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;52:8864-8876. [PMID: 9979876 DOI: 10.1103/physrevb.52.8864] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
10
Spicka V, Lipavsk P, Velick B. Field emission from the vibronic Koster-Slater impurity. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:5353-5361. [PMID: 10011487 DOI: 10.1103/physrevb.49.5353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
11
Li WG, Myles CW. Deep-level wave functions including lattice-relaxation effects. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:4281-4288. [PMID: 10006573 DOI: 10.1103/physrevb.47.4281] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
12
Overhof H, Scheffler M, Weinert CM. Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:12494-12506. [PMID: 9997050 DOI: 10.1103/physrevb.43.12494] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
13
Khowash PK. Electronic structure of S and Sn impurities in InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:9931-9934. [PMID: 9996696 DOI: 10.1103/physrevb.43.9931] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
14
Caldas MJ, Dabrowski J, Fazzio A, Scheffler M. Anion-antisite-like defects in III-V compounds. PHYSICAL REVIEW LETTERS 1990;65:2046-2049. [PMID: 10042433 DOI: 10.1103/physrevlett.65.2046] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
15
Talwar DN, Vandevyver M. Pressure-dependent phonon properties of III-V compound semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:12129-12139. [PMID: 9993668 DOI: 10.1103/physrevb.41.12129] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
16
Talwar DN, Vandevyver M. Effect of alloy disorder on the vibrational spectrum of silicon donors in AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:9779-9789. [PMID: 9991500 DOI: 10.1103/physrevb.40.9779] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
17
Dabrowski J, Scheffler M. Isolated arsenic-antisite defect in GaAs and the properties of EL2. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:10391-10401. [PMID: 9991584 DOI: 10.1103/physrevb.40.10391] [Citation(s) in RCA: 72] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
18
Nichols CS, Pantelides ST. Mechanisms of dopant impurity diffusion in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:5484-5496. [PMID: 9992580 DOI: 10.1103/physrevb.40.5484] [Citation(s) in RCA: 67] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
19
Samara GA. Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:11001-11010. [PMID: 9947913 DOI: 10.1103/physrevb.39.11001] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
20
Qteish A, Motta N, Balzarotti A. Effect of relaxation of the second-nearest neighbors on the thermodynamic properties of semiconducting alloys: Application to GaAsySb1-y. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:5987-5997. [PMID: 9949021 DOI: 10.1103/physrevb.39.5987] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
21
Cargill GS, Angilello J, Kavanagh KL. Lattice compression from conduction electrons in heavily doped Si:As. PHYSICAL REVIEW LETTERS 1988;61:1748-1751. [PMID: 10038886 DOI: 10.1103/physrevlett.61.1748] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
22
Scheffler M, Dabrowski J. Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors. ACTA ACUST UNITED AC 1988. [DOI: 10.1080/01418618808205178] [Citation(s) in RCA: 82] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
23
Samara GA. Breathing-mode lattice relaxation associated with the vacancy and phosphorous-vacancy-pair (E-center) defect in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;37:8523-8526. [PMID: 9944210 DOI: 10.1103/physrevb.37.8523] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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