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Hofmann OT, Zojer E, Hörmann L, Jeindl A, Maurer RJ. First-principles calculations of hybrid inorganic-organic interfaces: from state-of-the-art to best practice. Phys Chem Chem Phys 2021; 23:8132-8180. [PMID: 33875987 PMCID: PMC8237233 DOI: 10.1039/d0cp06605b] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2020] [Accepted: 03/05/2021] [Indexed: 12/18/2022]
Abstract
The computational characterization of inorganic-organic hybrid interfaces is arguably one of the technically most challenging applications of density functional theory. Due to the fundamentally different electronic properties of the inorganic and the organic components of a hybrid interface, the proper choice of the electronic structure method, of the algorithms to solve these methods, and of the parameters that enter these algorithms is highly non-trivial. In fact, computational choices that work well for one of the components often perform poorly for the other. As a consequence, default settings for one materials class are typically inadequate for the hybrid system, which makes calculations employing such settings inefficient and sometimes even prone to erroneous results. To address this issue, we discuss how to choose appropriate atomistic representations for the system under investigation, we highlight the role of the exchange-correlation functional and the van der Waals correction employed in the calculation and we provide tips and tricks how to efficiently converge the self-consistent field cycle and to obtain accurate geometries. We particularly focus on potentially unexpected pitfalls and the errors they incur. As a summary, we provide a list of best practice rules for interface simulations that should especially serve as a useful starting point for less experienced users and newcomers to the field.
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Affiliation(s)
- Oliver T Hofmann
- Institute of Solid State Physics, Graz University of Technology, NAWI Graz, Petersgasse 16/II, 8010 Graz, Austria.
| | - Egbert Zojer
- Institute of Solid State Physics, Graz University of Technology, NAWI Graz, Petersgasse 16/II, 8010 Graz, Austria.
| | - Lukas Hörmann
- Institute of Solid State Physics, Graz University of Technology, NAWI Graz, Petersgasse 16/II, 8010 Graz, Austria.
| | - Andreas Jeindl
- Institute of Solid State Physics, Graz University of Technology, NAWI Graz, Petersgasse 16/II, 8010 Graz, Austria.
| | - Reinhard J Maurer
- Department of Chemistry, University of Warwick, Coventry, CV4 7AL, UK
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Taucher T, Hofmann OT, Zojer E. Final-State Simulations of Core-Level Binding Energies at Metal-Organic Hybrid Interfaces: Artifacts Caused by Spurious Collective Electrostatic Effects. ACS OMEGA 2020; 5:25868-25881. [PMID: 33073112 PMCID: PMC7557941 DOI: 10.1021/acsomega.0c03209] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2020] [Accepted: 09/14/2020] [Indexed: 05/08/2023]
Abstract
Core-level energies are frequently calculated to explain the X-ray photoelectron spectra of metal-organic hybrid interfaces. The current paper describes how such simulations can be flawed when modeling interfaces between physisorbed organic molecules and metals. The problem occurs when applying periodic boundary conditions to correctly describe extended interfaces and simultaneously considering core hole excitations in the framework of a final-state approach to account for screening effects. Since the core hole is generated in every unit cell, an artificial dipole layer is formed. In this work, we study methane on an Al(100) surface as a deliberately chosen model system for hybrid interfaces to evaluate the impact of this computational artifact. We show that changing the supercell size leads to artificial shifts in the calculated core-level energies that can be well beyond 1 eV for small cells. The same applies to atoms at comparably large distances from the substrate, encountered, for example, in extended, upright-standing adsorbate molecules. We also argue that the calculated work function change due to a core-level excitation can serve as an indication for the occurrence of such an artifact and discuss possible remedies for the problem.
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Xu Y, Hofmann OT, Schlesinger R, Winkler S, Frisch J, Niederhausen J, Vollmer A, Blumstengel S, Henneberger F, Koch N, Rinke P, Scheffler M. Space-charge transfer in hybrid inorganic-organic systems. PHYSICAL REVIEW LETTERS 2013; 111:226802. [PMID: 24329464 DOI: 10.1103/physrevlett.111.226802] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2013] [Indexed: 05/24/2023]
Abstract
We discuss density functional theory calculations of hybrid inorganic-organic systems that explicitly include the global effects of doping (i.e., position of the Fermi level) and the formation of a space-charge layer. For the example of tetrafluoro-tetracyanoquinodimethane on the ZnO(0001[over ¯]) surface we show that the adsorption energy and electron transfer depend strongly on the ZnO doping. The associated work function changes are large, for which the formation of space-charge layers is the main driving force. The prominent doping effects are expected to be quite general for charge-transfer interfaces in hybrid inorganic-organic systems and important for device design.
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Affiliation(s)
- Yong Xu
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin, Germany
| | - Oliver T Hofmann
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin, Germany
| | | | - Stefanie Winkler
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH-BESSY II, 12489 Berlin, Germany
| | - Johannes Frisch
- Humboldt-Universität zu Berlin, Institut für Physik, 12489 Berlin, Germany
| | - Jens Niederhausen
- Humboldt-Universität zu Berlin, Institut für Physik, 12489 Berlin, Germany
| | - Antje Vollmer
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH-BESSY II, 12489 Berlin, Germany
| | - Sylke Blumstengel
- Humboldt-Universität zu Berlin, Institut für Physik, 12489 Berlin, Germany
| | - Fritz Henneberger
- Humboldt-Universität zu Berlin, Institut für Physik, 12489 Berlin, Germany
| | - Norbert Koch
- Humboldt-Universität zu Berlin, Institut für Physik, 12489 Berlin, Germany and Helmholtz-Zentrum Berlin für Materialien und Energie GmbH-BESSY II, 12489 Berlin, Germany
| | - Patrick Rinke
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, 14195 Berlin, Germany
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Hofmann OT, Deinert JC, Xu Y, Rinke P, Stähler J, Wolf M, Scheffler M. Large work function reduction by adsorption of a molecule with a negative electron affinity: Pyridine on ZnO(101¯0). J Chem Phys 2013; 139:174701. [DOI: 10.1063/1.4827017] [Citation(s) in RCA: 62] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
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Richter NA, Sicolo S, Levchenko SV, Sauer J, Scheffler M. Concentration of vacancies at metal-oxide surfaces: case study of MgO(100). PHYSICAL REVIEW LETTERS 2013; 111:045502. [PMID: 23931382 DOI: 10.1103/physrevlett.111.045502] [Citation(s) in RCA: 44] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2013] [Indexed: 05/24/2023]
Abstract
We investigate the effects of doping on the formation energy and concentration of oxygen vacancies at a metal-oxide surface, using MgO(100) as an example. Our approach employs density-functional theory, where the performance of the exchange-correlation functional is carefully analyzed, and the functional is chosen according to a condition on density-functional theory ionization energies. The approach is further validated by coupled-cluster calculations, including single, double, and perturbative triple substitutions, for embedded clusters. We demonstrate that the concentration of oxygen vacancies at a doped oxide surface is largely determined by the formation of a macroscopically extended space-charge region.
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Affiliation(s)
- Norina A Richter
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin, Germany
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Stoneham AM, Pajot B, Schober HR. Local distortions and volume changes in semiconductors: donors in silicon. ACTA ACUST UNITED AC 2000. [DOI: 10.1088/0022-3719/21/26/016] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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Casali RA, Caravaca MA, Rodriguez CO. Local relaxations and electric-field gradient at the Cd site in heavily doped Si:Cd. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:16701-16705. [PMID: 9985798 DOI: 10.1103/physrevb.54.16701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Liang ZN, Denteneer PJ, Niesen L. Microscopic structures of Sb-H, Te-H, and Sn-H complexes in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:8864-8876. [PMID: 9979876 DOI: 10.1103/physrevb.52.8864] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Spicka V, Lipavsk P, Velick B. Field emission from the vibronic Koster-Slater impurity. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:5353-5361. [PMID: 10011487 DOI: 10.1103/physrevb.49.5353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Li WG, Myles CW. Deep-level wave functions including lattice-relaxation effects. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:4281-4288. [PMID: 10006573 DOI: 10.1103/physrevb.47.4281] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Overhof H, Scheffler M, Weinert CM. Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:12494-12506. [PMID: 9997050 DOI: 10.1103/physrevb.43.12494] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Khowash PK. Electronic structure of S and Sn impurities in InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:9931-9934. [PMID: 9996696 DOI: 10.1103/physrevb.43.9931] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Caldas MJ, Dabrowski J, Fazzio A, Scheffler M. Anion-antisite-like defects in III-V compounds. PHYSICAL REVIEW LETTERS 1990; 65:2046-2049. [PMID: 10042433 DOI: 10.1103/physrevlett.65.2046] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Talwar DN, Vandevyver M. Pressure-dependent phonon properties of III-V compound semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:12129-12139. [PMID: 9993668 DOI: 10.1103/physrevb.41.12129] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Talwar DN, Vandevyver M. Effect of alloy disorder on the vibrational spectrum of silicon donors in AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:9779-9789. [PMID: 9991500 DOI: 10.1103/physrevb.40.9779] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Dabrowski J, Scheffler M. Isolated arsenic-antisite defect in GaAs and the properties of EL2. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:10391-10401. [PMID: 9991584 DOI: 10.1103/physrevb.40.10391] [Citation(s) in RCA: 72] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Nichols CS, Pantelides ST. Mechanisms of dopant impurity diffusion in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:5484-5496. [PMID: 9992580 DOI: 10.1103/physrevb.40.5484] [Citation(s) in RCA: 67] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Samara GA. Breathing-mode lattice relaxation accompanying emission and capture by deep electronic levels in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:11001-11010. [PMID: 9947913 DOI: 10.1103/physrevb.39.11001] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Qteish A, Motta N, Balzarotti A. Effect of relaxation of the second-nearest neighbors on the thermodynamic properties of semiconducting alloys: Application to GaAsySb1-y. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:5987-5997. [PMID: 9949021 DOI: 10.1103/physrevb.39.5987] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cargill GS, Angilello J, Kavanagh KL. Lattice compression from conduction electrons in heavily doped Si:As. PHYSICAL REVIEW LETTERS 1988; 61:1748-1751. [PMID: 10038886 DOI: 10.1103/physrevlett.61.1748] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Scheffler M, Dabrowski J. Parameter-free calculations of total energies, interatomic forces and vibrational entropies of defects in semiconductors. ACTA ACUST UNITED AC 1988. [DOI: 10.1080/01418618808205178] [Citation(s) in RCA: 82] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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Samara GA. Breathing-mode lattice relaxation associated with the vacancy and phosphorous-vacancy-pair (E-center) defect in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 37:8523-8526. [PMID: 9944210 DOI: 10.1103/physrevb.37.8523] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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