Yoon H, Na SH, Choi JY, Kim MW, Kim H, An HS, Min BK, Ahn S, Yun JH, Gwak J, Yoon K, Kolekar SS, van Hest MFAM, Al-Deyab SS, Swihart MT, Yoon SS. Carbon- and oxygen-free Cu(InGa)(SSe)₂ solar cell with a 4.63% conversion efficiency by electrostatic spray deposition.
ACS APPLIED MATERIALS & INTERFACES 2014;
6:8369-8377. [PMID:
24765921 DOI:
10.1021/am501286d]
[Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)2 (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm(2) area, with Voc = 0.4 V, Jsc = 21 mA/cm(2), and FF = 0.53.
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