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Naresh-Kumar G, Vilalta-Clemente A, Jussila H, Winkelmann A, Nolze G, Vespucci S, Nagarajan S, Wilkinson AJ, Trager-Cowan C. Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction. Sci Rep 2017; 7:10916. [PMID: 28883500 PMCID: PMC5589861 DOI: 10.1038/s41598-017-11187-z] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2017] [Accepted: 08/14/2017] [Indexed: 11/16/2022] Open
Abstract
Advanced structural characterisation techniques which are rapid to use, non-destructive and structurally definitive on the nanoscale are in demand, especially for a detailed understanding of extended-defects and their influence on the properties of materials. We have applied the electron backscatter diffraction (EBSD) technique in a scanning electron microscope to non-destructively characterise and quantify antiphase domains (APDs) in GaP thin films grown on different (001) Si substrates with different offcuts. We were able to image and quantify APDs by relating the asymmetrical intensity distributions observed in the EBSD patterns acquired experimentally and comparing the same with the dynamical electron diffraction simulations. Additionally mean angular error maps were also plotted using automated cross-correlation based approaches to image APDs. Samples grown on substrates with a 4° offcut from the [110] do not show any APDs, whereas samples grown on the exactly oriented substrates contain APDs. The procedures described in our work can be adopted for characterising a wide range of other material systems possessing non-centrosymmetric point groups.
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Affiliation(s)
- G Naresh-Kumar
- Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 ONG, UK.
| | - A Vilalta-Clemente
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - H Jussila
- Department of Electronics and Nanoengineering, Aalto University, FI-00076, Aalto, Finland
| | - A Winkelmann
- Bruker Nano GmbH, Am Studio 2D, 12489, Berlin, Germany
| | - G Nolze
- BAM, Federal Institute for Materials Research and Testing, Unter den Eichen 87, 12205, Berlin, Germany
| | - S Vespucci
- Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 ONG, UK
| | - S Nagarajan
- Department of Electronics and Nanoengineering, Aalto University, FI-00076, Aalto, Finland
| | - A J Wilkinson
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - C Trager-Cowan
- Department of Physics, SUPA, University of Strathclyde, Glasgow, G4 ONG, UK
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Abstract
We describe a cathodoluminescence spectrometer that is attached to an analytical transmission electron microscope. After a brief consideration of the set-up and the peculiarities of recording spectra and of mapping defect distributions in panchromatic and monochromatic cathodoluminescence, we discuss two examples of applications. Emphasis is placed on the potential for obtaining novel information about materials and processes on a microscopic and a nanoscopic scale by combining cathodoluminescence with the structural and chemical information for the same site of the specimen. We select an example concerning the role of In distribution in light emission from InGa/GaN quantum wells and a second one concerning the analysis of the initial electron radiation damage of Cu(In,Ga)Se(2) photovoltaic films.
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Affiliation(s)
- H P Strunk
- Institute of Microcharacterization, Department of Materials Science and Engineering, University of Erlangen-Nuremberg, Cauerstr. 6, 91058 Erlangen, Germany.
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