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Martínez HP, Luna JA, Morales R, Casco JF, Hernández JAD, Luna A, Hernández ZJ, Mendoza G, Monfil K, Ramírez R, Carrillo J, Flores J. Blue Electroluminescence in SRO-HFCVD Films. NANOMATERIALS 2021; 11:nano11040943. [PMID: 33917685 PMCID: PMC8067983 DOI: 10.3390/nano11040943] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2020] [Revised: 03/02/2021] [Accepted: 03/17/2021] [Indexed: 01/21/2023]
Abstract
In this work, electroluminescence in Metal-Insulator-Semiconductors (MIS) and Metal-Insulator-Metal (MIM)-type structures was studied. These structures were fabricated with single- and double-layer silicon-rich-oxide (SRO) films by means of Hot Filament Chemical Vapor Deposition (HFCVD), gold and indium tin oxide (ITO) were used on silicon and quartz substrates as a back and front contact, respectively. The thickness, refractive indices, and excess silicon of the SRO films were analyzed. The behavior of the MIS and MIM-type structures and the effects of the pristine current-voltage (I-V) curves with high and low conduction states are presented. The structures exhibit different conduction mechanisms as the Ohmic, Poole–Frenkel, Fowler–Nordheim, and Hopping that contribute to carrier transport in the SRO films. These conduction mechanisms are related to the electroluminescence spectra obtained from the MIS and MIM-like structures with SRO films. The electroluminescence present in these structures has shown bright dots in the low current of 36 uA with a voltage of −20 V to −50 V. However, when applied voltages greater than −67 V with 270 uA, a full area with uniform blue light emission is shown.
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Affiliation(s)
- Haydee P. Martínez
- Departamento de Ingeniería Eléctrica y Electrónica, Tecnológico Nacional de México/Instituto Tecnológico de Apizaco Carretera Apizaco-Tzompantepec, Esquina con Av. Instituto Tecnológico S/N. Conurbado Apizaco-Tzompantepec, Apizaco 90300, Mexico; (H.P.M.); (R.M.); (J.F.C.)
| | - José A. Luna
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
- Correspondence: ; Tel.:+52-22-23-59-00-16
| | - Roberto Morales
- Departamento de Ingeniería Eléctrica y Electrónica, Tecnológico Nacional de México/Instituto Tecnológico de Apizaco Carretera Apizaco-Tzompantepec, Esquina con Av. Instituto Tecnológico S/N. Conurbado Apizaco-Tzompantepec, Apizaco 90300, Mexico; (H.P.M.); (R.M.); (J.F.C.)
| | - José F. Casco
- Departamento de Ingeniería Eléctrica y Electrónica, Tecnológico Nacional de México/Instituto Tecnológico de Apizaco Carretera Apizaco-Tzompantepec, Esquina con Av. Instituto Tecnológico S/N. Conurbado Apizaco-Tzompantepec, Apizaco 90300, Mexico; (H.P.M.); (R.M.); (J.F.C.)
| | - José A. D. Hernández
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Adan Luna
- Facultad de Ingeniería Química, Benemérita Universidad Autónoma de Puebla (BUAP), Puebla 72570, Mexico;
| | - Zaira J. Hernández
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Gabriel Mendoza
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Karim Monfil
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Raquel Ramírez
- Carrera de Mecatrónica, Universidad Tecnológica de Huejotzingo (UTH), Real San Mateo 36B, Segunda Secc, Santa Ana Xalmimilulco, Puebla 74169, Mexico;
| | - Jesús Carrillo
- Centro de Investigación en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla 72570, Mexico; (J.A.D.H.); (Z.J.H.); (G.M.); (K.M.); (J.C.)
| | - Javier Flores
- Departamento de Ingeniería, Benemérita Universidad Autónoma de Puebla-Ciudad Universitaria, Blvd. Valsequillo y Esquina, Av. San Claudio s/n, Col. San Manuel, Puebla 72570, Mexico;
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Spectroscopic and Microscopic Correlation of SRO-HFCVD Films on Quartz and Silicon. CRYSTALS 2020. [DOI: 10.3390/cryst10020127] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
This work is focused on making a correlation between results obtained by using spectroscopy and microscopy techniques from single and twofold-layer Silicon-Rich Oxide (SRO) films. SRO films single-layer and twofold-layer characterizations were compared considering the conditions as-grown and with thermal treatment at 1100 °C for 60 min in a nitrogen atmosphere. The thickness of the single-layer film is 324.7 nm while for the twofold-layer film it is 613.2 nm; after heat-treated, both thicknesses decreased until 28.8 nm. X-ray Photoelectron Spectroscopy shows changes in the excess-silicon in single-layer SRO films, with 10% in as-grown films and decreases to 5% for the heat-treated films. Fourier Transform Infrared Spectroscopy (FTIR) exhibits three characteristic vibrational modes of SiO2, as well as, the vibrating modes associated with the Si-H bonds, which disappear after the heat treatment. With UV–Vis spectroscopy results we obtained the absorbance and the absorption coefficient for the SRO films in order to calculate the optical bandgap energy (Egopt), which increased with heat-treatment. The energy peaks of the photoluminescence spectra were used to calculate the silicon nanocrystal size, obtaining thus an average size of 1.89 ± 0.32 nm for the as-grown layer, decreasing the size to 1.64 ± 0.01 nm with the thermal treatment. On the other hand, scanning electron microscopy and high-resolution transmission electron microscopy images confirm the thickness of the twofold-layer SRO films as 628 nm for the as-grown layer and 540 nm for the layer with heat-treatment, and the silicon nanocrystal size of 2.3 ± 0.6 nm for the films with thermal treatment.
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