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Gadroy C, Boukraa R, Battaglini N, Le Derf F, Mofaddel N, Vieillard J, Piro B. An Electrolyte-Gated Graphene Field-Effect Transistor for Detection of Gadolinium(III) in Aqueous Media. BIOSENSORS 2023; 13:363. [PMID: 36979575 PMCID: PMC10046572 DOI: 10.3390/bios13030363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/04/2023] [Revised: 02/27/2023] [Accepted: 03/06/2023] [Indexed: 06/18/2023]
Abstract
In this work, an electrolyte-gated graphene field-effect transistor is developed for Gd3+ ion detection in water. The source and drain electrodes of the transistor are fabricated by photolithography on polyimide, while the graphene channel is obtained by inkjet-printing a graphene oxide ink subsequently electro-reduced to give reduced graphene oxide. The Gd3+-selective ligand DOTA is functionalized by an alkyne linker to be grafted by click chemistry on a gold electrode without losing its affinity for Gd3+. The synthesis route is fully described, and the ligand, the linker and the functionalized surface are characterized by electrochemical analysis and spectroscopy. The as functionalized electrode is used as gate in the graphene transistor so to modulate the source-drain current as a function of its potential, which is itself modulated by the concentration of Gd3+captured on the gate surface. The obtained sensor is able to quantify Gd3+ even in a sample containing several other potentially interfering ions such as Ni2+, Ca2+, Na+ and In3+. The quantification range is from 1 pM to 10 mM, with a sensitivity of 20 mV dec-1 expected for a trivalent ion. This paves the way for Gd3+ quantification in hospital or industrial wastewater.
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Affiliation(s)
- Charlène Gadroy
- Université de Rouen-Normandie, Campus d’Evreux, UMR-CNRS 6014, F-27000 Evreux, France
| | - Rassen Boukraa
- Université Paris Cité, CNRS, ITODYS, F-75013 Paris, France
| | | | - Franck Le Derf
- Université de Rouen-Normandie, Campus d’Evreux, UMR-CNRS 6014, F-27000 Evreux, France
| | - Nadine Mofaddel
- Université de Rouen-Normandie, Campus d’Evreux, UMR-CNRS 6014, F-27000 Evreux, France
| | - Julien Vieillard
- Université de Rouen-Normandie, Campus d’Evreux, UMR-CNRS 6014, F-27000 Evreux, France
| | - Benoît Piro
- Université Paris Cité, CNRS, ITODYS, F-75013 Paris, France
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Ogurcovs A, Kadiwala K, Sledevskis E, Krasovska M, Mizers V. Glyphosate Sensor Based on Nanostructured Water-Gated CuO Field-Effect Transistor. SENSORS (BASEL, SWITZERLAND) 2022; 22:s22228744. [PMID: 36433339 PMCID: PMC9697268 DOI: 10.3390/s22228744] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 11/05/2022] [Accepted: 11/09/2022] [Indexed: 05/31/2023]
Abstract
This research presents a comparative analysis of water-gated thin film transistors based on a copper oxide (CuO) semiconductor in the form of a smooth film and a nanostructured surface. A smooth CuO film was deposited through reactive magnetron sputtering followed by annealing in atmosphere at a temperature of 280 ∘C. Copper oxide nanostructures were obtained by hydrothermal synthesis on a preliminary magnetron sputtered 2 nm thick CuO precursor followed by annealing at 280 ∘C. An X-ray diffraction (XRD) analysis of the samples revealed the presence of a tenorite (CuO) phase with a predominant orientation of (002). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies of the samples revealed a highly developed surface with crystallites having a monoclinic syngony and dimensions of 15-20 nm in thickness, 150 nm in length, and 100 nm in height relative to a 2.5 nm height for the CuO crystallites of the smooth film. Electric measurements of the studied devices revealed typical current-voltage characteristics of semiconductors with predominant hole conductivity. The maximum ON/OFF ratio at a rain-source voltage of 0.4 volts and -1.2 volts on the gate for a smooth film was 102, and for a nanostructured transistor, it was 103. However, a much stronger saturation of the channel was observed for the nanostructured channel than for the smooth film. A test solution containing glyphosate dissolved in deionized water in three different concentrations of 5, 10, and 15 μmol/L was used during the experiments. The principle of operation was based on the preliminary saturation of the solution with Cu ions, followed by the formation of a metal-organic complex alongside glyphate. The glyphosate contents in the analyte led to a decrease in the conductivity of the transistor on the axis of the smooth film. In turn, the opposite effect was observed on the nanostructured surface, i.e., an increase in conductivity was noted upon the introduction of an analyte. Despite this, the overall sensitivity of the nanostructured device was twice as high as that of the device with a thin film channel. The relative changes in the field-effect transistor (FET) conductivity at maximum glyphosate concentrations of 15 μmol/L reached 19.42% for the nanostructured CuO film and 3.3% for the smooth film.
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Affiliation(s)
- Andrejs Ogurcovs
- Institute of Solid State Physics, University of Latvia, Kengaraga Street 8, LV-1063 Riga, Latvia
| | - Kevon Kadiwala
- Institute of Solid State Physics, University of Latvia, Kengaraga Street 8, LV-1063 Riga, Latvia
| | - Eriks Sledevskis
- G. Liberts’ Innovative Microscopy Centre, Department of Technology, Institute of Life Sciences and Technology, Daugavpils University, Parades Street 1A, LV-5401 Daugavpils, Latvia
| | - Marina Krasovska
- G. Liberts’ Innovative Microscopy Centre, Department of Technology, Institute of Life Sciences and Technology, Daugavpils University, Parades Street 1A, LV-5401 Daugavpils, Latvia
| | - Valdis Mizers
- G. Liberts’ Innovative Microscopy Centre, Department of Technology, Institute of Life Sciences and Technology, Daugavpils University, Parades Street 1A, LV-5401 Daugavpils, Latvia
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Rizzato S, Monteduro AG, Leo A, Todaro MT, Maruccio G. From ion‐sensitive field‐effect transistor to 2D materials field‐effect‐transistor biosensors. ELECTROCHEMICAL SCIENCE ADVANCES 2022. [DOI: 10.1002/elsa.202200006] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022] Open
Affiliation(s)
- Silvia Rizzato
- Omnics Research Group, Department of Mathematics and Physics “Ennio De Giorgi” University of Salento and INFN Sezione di Lecce Lecce Italy
- Institute of Nanotechnology CNR‐Nanotec Lecce Italy
| | - Anna Grazia Monteduro
- Omnics Research Group, Department of Mathematics and Physics “Ennio De Giorgi” University of Salento and INFN Sezione di Lecce Lecce Italy
- Institute of Nanotechnology CNR‐Nanotec Lecce Italy
| | - Angelo Leo
- Omnics Research Group, Department of Mathematics and Physics “Ennio De Giorgi” University of Salento and INFN Sezione di Lecce Lecce Italy
- Institute of Nanotechnology CNR‐Nanotec Lecce Italy
| | | | - Giuseppe Maruccio
- Omnics Research Group, Department of Mathematics and Physics “Ennio De Giorgi” University of Salento and INFN Sezione di Lecce Lecce Italy
- Institute of Nanotechnology CNR‐Nanotec Lecce Italy
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Zhang Q, Tamayo A, Leonardi F, Mas-Torrent M. Interplay between Electrolyte-Gated Organic Field-Effect Transistors and Surfactants: A Surface Aggregation Tool and Protecting Semiconducting Layer. ACS APPLIED MATERIALS & INTERFACES 2021; 13:30902-30909. [PMID: 34156234 PMCID: PMC8289230 DOI: 10.1021/acsami.1c05938] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 06/08/2021] [Indexed: 06/13/2023]
Abstract
Molecular surfactants, which are based on a water-insoluble tail and a water-soluble head, are widely employed in many areas, such as surface coatings or for drug delivery, thanks to their capability to form micelles in solution or supramolecular structures at the solid/liquid interface. Electrolyte-gated organic field-effect transistors (EGOFETs) are highly sensitive to changes occurring at their electrolyte/gate electrode and electrolyte/organic semiconductor interfaces, and hence, they have been much explored in biosensing due to their inherent amplification properties. Here, we demonstrate that the EGOFETs and surfactants can provide mutual benefits to each other. EGOFETs can be a simple and complementary tool to study the aggregation behavior of cationic and anionic surfactants at low concentrations on a polarized metal surface. In this way, we have monitored the monolayer formation of cationic and anionic surfactants at the water/electrode interface with p-type and n-type devices, respectively. On the other hand, the operational stability of EGOFETs has been dramatically enhanced, thanks to the formation of a protective layer on top of the organic semiconductor by exposing it to a high concentration of a surfactant solution (above the critical micelle concentration). Stable performances were achieved for more than 10 and 2 h of continuous operation for p-type and n-type devices, respectively. Accordingly, this work points not only that EGOFETs can be applied to a wider range of applications beyond biosensing but also that these devices can effectively improve their long-term stability by simply treating them with a suitable surfactant.
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Affiliation(s)
- Qiaoming Zhang
- School
of Physical Science and Technology, Southwest
University, 400715 Chongqing, P. R. China
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Bellaterra, 08193 Barcelona, Spain
| | - Adrián Tamayo
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Bellaterra, 08193 Barcelona, Spain
| | - Francesca Leonardi
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Bellaterra, 08193 Barcelona, Spain
| | - Marta Mas-Torrent
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Bellaterra, 08193 Barcelona, Spain
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Zhang Y, Zeng Q, Shen Y, Yang L, Yu F. Electrochemical Stability Investigations and Drug Toxicity Tests of Electrolyte-Gated Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:56216-56221. [PMID: 33327057 DOI: 10.1021/acsami.0c15024] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Electrolyte-gated organic field-effect transistors (EGOFETs) are emerging as a new frontier of organic bioelectronics, with promising applications in biosensing, pharmaceutical testing, and neuroscience. However, the limited charge carriers' mobility and well-known environmental instability of conjugated polymers constrain the real applications of organic bioelectronics. Here, we comparatively studied the electrochemical stability of p-type conjugated polymer films in the EGOFET configuration. By combining electrochemical stability tests, morphology characterization, and EQCM-D monitoring, we find that a donor-acceptor copolymer, poly(N-alkyldiketopyrrolo-pyrrole-dithienylthieno[3,2-b]thiophene) (DPP-DTT) shows improved mobility and electrochemical stability under an electrolyte, which may benefit from the ordered morphology and close alkyl side-chains' interdigitation preventing water diffusion and ion doping during long-term operation under an electrolyte. Based on the DPP-DTT EGOFETs, we have demonstrated a low-cost drug toxicity test platform that is sensitive enough to distinguish the cytotoxicity of different chemicals. This study overall pushes forward the development of organic bioelectronics with enhanced stability and sensitivity and presents successful exploitation of EGOFET in pharmaceutical research.
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Affiliation(s)
- Yu Zhang
- Department of Electronic and Communication Engineering, Shenzhen Polytechnic, Shenzhen 518055, P. R. China
| | - Qiming Zeng
- Department of Electronic and Communication Engineering, Shenzhen Polytechnic, Shenzhen 518055, P. R. China
| | - Yujie Shen
- Shenzhen Pynect Science and Technology Ltd., Shenzhen 518055, P. R. China
| | - Li Yang
- Department of Electronic and Communication Engineering, Shenzhen Polytechnic, Shenzhen 518055, P. R. China
| | - Fei Yu
- Department of Electronic and Communication Engineering, Shenzhen Polytechnic, Shenzhen 518055, P. R. China
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